ISL9V3040D3S [FAIRCHILD]
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT; EcoSPARKTM 300mJ ， 400V ， N沟道IGBT点火
| 型号： | ISL9V3040D3S |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT |
| 文件： | 总8页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2003
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
Formerly Developmental Type 49362
General Description
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and
ISL9V3040S3 are the next generation ignition IGBTs that offer
Applications
•
•
Automotive Ignition Coil Driver Circuits
Coil- On Plug Applications
outstanding SCIS capability in the space saving D-Pak (TO-252), as
well as the industry standard D²-Pak (TO-263), and TO-262 and TO-
220 plastic packages. This device is intended for use in automotive
ignition circuits, specifically as a coil driver. Internal diodes provide
voltage clamping without the need for external components.
Features
•
•
•
Space saving D-Pak package availability
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
o
SCIS Energy = 300mJ at T = 25 C
J
Logic Level Gate Drive
Package
Symbol
JEDEC TO-263AB
JEDEC TO-220AB
E
D²-Pak
C
G
COLLECTOR
G
E
R1
R2
GATE
JEDEC TO-262AA
JEDEC TO-252AA
D-Pak
E
C
G
G
EMITTER
E
COLLECTOR
(FLANGE)
Device Maximum Ratings T = 25°C unless otherwise noted
A
Symbol
Parameter
Collector to Emitter Breakdown Voltage (I = 1 mA)
Ratings
Units
V
BV
BV
430
24
CER
ECS
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)
V
C
E
At Starting T = 25°C, I = 14.2A, L = 3.0 mHy
SCIS
300
mJ
mJ
A
SCIS25
J
E
At Starting T = 150°C, I = 10.6A, L = 3.0 mHy
SCIS
170
SCIS150
J
I
Collector Current Continuous, At T = 25°C, See Fig 9
21
C25
C
I
Collector Current Continuous, At T = 110°C, See Fig 9
17
A
C110
C
V
Gate to Emitter Voltage Continuous
±10
V
GEM
P
Power Dissipation Total T = 25°C
150
W
D
C
Power Dissipation Derating T > 25°C
1.0
W/°C
°C
°C
°C
°C
kV
C
T
Operating Junction Temperature Range
-40 to 175
-40 to 175
300
J
T
Storage Junction Temperature Range
STG
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
L
T
260
pkg
ESD
4
©2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
Package Marking and Ordering Information
Device Marking
V3040D
Device
Package
TO-252AA
TO-263AB
TO-220AA
TO-262AA
Tape Width
Quantity
ISL9V3040D3S
ISL9V3040S3S
ISL9V3040P3
ISL9V3040S3
16mm
2500
V3040S
24mm
800
V3040P
-
-
-
-
V3040S
Electrical Characteristics T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BV
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
I
R
= 2mA, V = 0,
370
400
430
450
-
V
V
V
CER
CES
C
GE
= 1KΩ, See Fig. 15
G
T = -40 to 150°C
J
BV
I
R
= 10mA, V = 0,
390
420
-
C
GE
= 0, See Fig. 15
G
T = -40 to 150°C
J
BV
BV
I
T
= -75mA, V = 0V,
30
ECS
C
GE
= 25°C
C
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
= ± 2mA
±12
±14
-
25
1
V
GES
GES
I
V
R
= 250V,
= 1KΩ, See
T
T
= 25°C
-
-
-
-
µA
mA
CER
CER
C
G
= 150°C
C
Fig. 11
I
Emitter to Collector Leakage Current
V
= 24V, See T = 25°C
-
-
-
1
40
-
mA
mA
Ω
ECS
EC
C
Fig. 11
T
= 150°C
-
-
C
R
R
Series Gate Resistance
70
-
1
2
Gate to Emitter Resistance
10K
26K
Ω
On State Characteristics
V
V
V
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
I
V
= 6A,
T = 25°C,
C
See Fig. 3
T = 150°C,
C
See Fig. 4
T = 150°C
C
-
-
-
1.25
1.58
1.90
1.60
1.80
2.20
V
V
V
CE(SAT)
CE(SAT)
CE(SAT)
C
= 4V
GE
I
V
= 10A,
C
= 4.5V
GE
I
= 15A,
C
V
= 4.5V
GE
Dynamic Characteristics
Q
Gate Charge
I
= 10A, V = 12V,
-
17
-
nC
G(ON)
C
CE
V
= 5V, See Fig. 14
GE
V
Gate to Emitter Threshold Voltage
I
V
= 1.0mA,
T
T
= 25°C
1.3
-
-
2.2
1.8
V
V
GE(TH)
C
C
C
= V
CE
GE,
= 150°C
0.75
See Fig. 10
V
Gate to Emitter Plateau Voltage
I
= 10A,
-
3.0
-
V
GEP
C
V
= 12V
CE
Switching Characteristics
t
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
V
V
= 14V, R = 1Ω,
-
-
0.7
2.1
4
7
µs
µs
d(ON)R
CE
L
= 5V, R = 1KΩ
t
GE
G
rR
T = 25°C, See Fig. 12
J
t
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
V
V
= 300V, L = 500µHy,
-
-
4.8
2.8
15
15
µs
µs
d(OFF)L
CE
GE
= 5V, R = 1KΩ
t
G
fL
T = 25°C, See Fig. 12
J
SCIS
Self Clamped Inductive Switching
T = 25°C, L = 3.0 mHy,
-
-
300
mJ
J
R
= 1KΩ, V = 5V, See
G
GE
Fig. 1 & 2
Thermal Characteristics
R
Thermal Resistance Junction-Case
TO-252,TO-263,TO-220,TO-
262
-
-
1.0
°C/W
θJC
©2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
Typical Performance Curves (Continued)
30
30
25
20
15
10
5
RG = 1kΩ, VGE = 5V,Vdd = 14V
RG = 1kΩ, VGE = 5V,Vdd = 14V
25
20
15
TJ = 25°C
TJ = 25°C
TJ = 150°C
10
TJ = 150°C
5
SCIS Curves valid for Vclamp Voltages of <430V
SCIS Curves valid for Vclamp Voltages of <430V
0
0
0
2
4
6
8
10
0
25
50
75
100
125
150
175
200
tCLP, TIME IN CLAMP (µS)
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.30
1.8
ICE = 6A
VGE = 3.7V
VGE = 4.0V
ICE = 10A
1.7
VGE = 3.7V
1.26
1.22
1.18
1.14
VGE = 4.0V
1.6
1.5
VGE = 4.5V
VGE = 5.0V
1.4
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
1.3
VGE = 8.0V
1.2
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
25
25
VGE = 8.0V
VGE = 8.0V
VGE = 5.0V
VGE = 5.0V
20
20
VGE = 4.5V
VGE = 4.5V
VGE = 4.0V
VGE = 4.0V
VGE = 3.7V
15
VGE = 3.7V
15
10
5
10
5
TJ = 25°C
TJ = - 40°C
0
0
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
©2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
Typical Performance Curves (Continued)
25
25
20
15
10
5
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
VGE = 8.0V
VGE = 5.0V
20
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
15
TJ = 150°C
TJ = 25°C
10
5
TJ = -40°C
3.5
TJ = 175°C
3.0 4.0
0
0
0
1.0
2.0
1.0
1.5
2.0
2.5
3.0
4.0
4.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
25
2.2
VCE = VGE
ICE = 1mA
VGE = 4.0V
2.0
1.8
1.6
1.4
1.2
1.0
20
15
10
5
0
-50
-25
0
25
50
75
100 125 150 175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (°C)
TJ JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
12
10000
ICE = 6.5A, VGE = 5V, RG = 1KΩ
VECS = 24V
Resistive tOFF
10
1000
100
10
Inductive tOFF
8
6
VCES = 300V
4
1
Resistive tON
VCES = 250V
2
0.1
-50
-25
0
25
50
75
100 125 150 175
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
©2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
Typical Performance Curves (Continued)
1600
8
7
6
5
4
3
2
1
0
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
FREQUENCY = 1 MHz
1200
CIES
VCE = 12V
800
CRES
400
VCE = 6V
COES
0
0
4
8
12
16
20
24
28
32
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
430
ICER = 10mA
425
420
TJ = - 40°C
TJ = 175°C
TJ = 25°C
415
410
405
400
395
390
10
100
1000
2000
3000
RG, SERIES GATE RESISTANCE (kΩ)
Figure 15. Breakdown Voltage vs Series Gate Resistance
100
0.5
0.2
0.1
10-1
10-2
10-3
0.05
t
1
0.02
0.01
P
D
t
2
DUTY FACTOR, D = t / t
1
2
PEAK T = (P X Z
X R ) + T
SINGLE PULSE
J
D
θ
JC
θJC C
10-6
10-5
10-4
10-3
10-2
10-1
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
Test Circuit and Waveforms
L
VCE
R
or
L
LOAD
C
C
RG
G
RG = 1KΩ
PULSE
GEN
+
-
G
DUT
E
VCE
DUT
5V
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VCE
BVCES
tP
VCE
L
IAS
C
VDD
VARY tP TO OBTAIN
+
RG
REQUIRED PEAK IAS
VDD
G
DUT
-
VGE
E
tP
IAS
0V
0
0.01Ω
tAV
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
©2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
SPICE Thermal Model
REV 7 March 2002
JUNCTION
th
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
CTHERM1 th 6 2.1e -3
CTHERM2 6 5 1.4e -1
CTHERM3 5 4 7.3e -3
CTHERM4 4 3 2.1e -1
CTHERM5 3 2 1.1e -1
CTHERM6 2 tl 6.2e +6
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
6
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 1.9e -1
RTHERM3 5 4 2.2e -1
RTHERM4 4 3 6.0e -2
RTHERM5 3 2 5.8e -2
RTHERM6 2 tl 1.6e -3
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
5
SABER Thermal Model
SABER thermal model
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
template thermal_model th tl
thermal_c th, tl
{
4
3
2
ctherm.ctherm1 th 6 = 2.1e -3
ctherm.ctherm2 6 5 = 1.4e -1
ctherm.ctherm3 5 4 = 7.3e -3
ctherm.ctherm4 4 3 = 2.2e -1
ctherm.ctherm5 3 2 =1.1e -1
ctherm.ctherm6 2 tl = 6.2e +6
rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 1.9e -1
rtherm.rtherm3 5 4 = 2.2e -1
rtherm.rtherm4 4 3 = 6.0e -2
rtherm.rtherm5 3 2 = 5.8e -2
rtherm.rtherm6 2 tl = 1.6e -3
}
tl
CASE
©2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarksꢀ
ACEx
PACMAN
POP
Power247
PowerTrench
QFET
QS
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
FACT
ActiveArray
Bottomless
CoolFET
CROSSVOLT
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT Quiet Series
â
FAST
â
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I2C
SyncFET
â
QT Optoelectronics TinyLogic
Quiet Series
RapidConfigure
RapidConnect
TruTranslation
UHC
UltraFET
MSXPro
OCX
â
OCXPro
OPTOLOGIC
Across the boardꢀAround the worldꢀ
The Power Franchise
ProgrammableActive Droop
â
â
SILENT SWITCHER VCX
SMARTSTART
OPTOPLANAR
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGNꢀ FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERSꢀ
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ
As used herein:
1ꢀ Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
userꢀ
2ꢀ A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectivenessꢀ
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product developmentꢀ Specifications may change in
any manner without noticeꢀ
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later dateꢀ
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
designꢀ
No Identification Needed
Obsolete
Full Production
This datasheet contains final specificationsꢀ Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve designꢀ
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductorꢀ
The datasheet is printed for reference information onlyꢀ
Revꢀ I2
相关型号：
©2020 ICPDF网 联系我们和版权申明