ISL9V3040D3SL-TQ2-R [UTC]

N-CHANNEL JUNCTION FET;


型号：	ISL9V3040D3SL-TQ2-R
厂家：	Unisonic Technologies
描述：	N-CHANNEL JUNCTION FET
文件：	总4页 (文件大小：199K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

ISL9V3040D3S

Insulated Gate Bipolar Transistor

300mJ, 400V, N-CHANNEL

IGNITION IGBT



DESCRIPTION

The UTC ISL9V3040D3S is an N-channel ignition Insulated

Gate Bipolar Transistor. It uses UTC’s advanced technology to

provide customers with outstanding SCIS capability.

The UTC ISL9V3040D3S is suitable for Coil –On plug

applications and Automotive Ignition Coil driver circuits, etc.



FEATURES

* Outstanding SCIS capability

* Logic level gate drive



SYMBOL



ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

ISL9V3040D3SL-TA3-T

ISL9V3040D3SL-TF3-T

ISL9V3040D3SL-TN3-R

ISL9V3040D3SL-TQ2-T

ISL9V3040D3SL-TQ2-R

ISL9V3040D3SG-TA3-T

ISL9V3040D3SG-TF3-T

ISL9V3040D3SG-TN3-R

ISL9V3040D3SG-TQ2-T

ISL9V3040D3SG-TQ2-R

TO-220

TO-220F

TO-252

TO-263

Tube

Tape Reel

Tube

Tape Reel

Note: Pin Assignment: G: Gate

C: Collector

E: Emitter

ISL9V3040D3SL-TA3-T

(1) T: Tube, R: Tape Reel

(1)Packing Type

(2)Package Type

(2) TA3: TO-220, TF3: TO-220F, TN3: TO-252

TQ2: TO-263

(3)Green Package

(3) L: Lead Free, G: Halogen Free and Lead Free



MARKING

www.unisonic.com.tw

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QW-R219-011.F

ISL9V3040D3S

Insulated Gate Bipolar Transistor



ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise noted)

PARAMETER

SYMBOL

BV_CER

RATINGS

450

UNIT

Collector to Emitter Breakdown Voltage

Emitter to Collector Voltage Reverse Battery Condition

BV_ECS

T_J=25°C, I_SCIS=14.2A, L=3.0mHy

300

At Starting

E_SCIS

T_J= 150°C, I_SCIS=10.6A, L=3.0mHy

170

T_C=25°C

Continuous Collector Current

I_C

T_C=110°C

Gate to Emitter Voltage Continuous

V_GEM

±10

TO-220/TO-263

TO-220F

125

Power Dissipation Total at T_C=25°C

41.6

125

TO-252

P_D

TO-220/TO-263

TO-220F

Power Dissipation Derating T_C>25°C

W/°C

0.332

TO-252

Electrostatic Discharge Voltage at 100pF, 1500Ω

Junction Temperature

ESD

T_J

°C

-40~175

Storage Temperature Range

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

1.0

UNIT

°C/W

TO-220/TO-252

TO-263

Junction to Case

θ_JC

TO-220F

3.0

UNISONIC TECHNOLOGIES CO., LTD

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QW-R219-011.F

www.unisonic.com.tw

ISL9V3040D3S

Insulated Gate Bipolar Transistor



ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Off State Characteristics

I_C=2mA, V_GE=0V, R_G=1KΩ,

T_J=-40~150°C

Collector to Emitter Breakdown Voltage

BV_CER

BV_CES

350 400 450

400 450 500

I_C=10mA, V_GE=0V, R_G=0,

T_J=-40~150°C

Collector to Emitter to Breakdown Voltage

Emitter to Collector Breakdown Voltage

Gate to Emitter Breakdown Voltage

BV_ECSI_C=-75mA, V_GE=0V, T_C=25°C

BV_GESI_GES=±2mA

±12 ±14

_CER=250V,

T_C=25°C

T_C=150°C

T_C=25°C

T_C=150°C

µA

Ω

Collector to Emitter Leakage Current

Emitter to Collector Leakage Current

I_CER

I_ECS

R_G=1KΩ

V_EC=24V

Series Gate Resistance

Gate to Emitter Resistance

On State Characteristics

R₁

R₂

10K

26K

Ω

I_C=6A, V_GE=4V

T_C=25°C

1.25 1.60

1.40 1.80

1.90 2.20

Collector to Emitter Saturation Voltage

V_CE(SAT)

I_C=10A, V_GE=4.5V T_C=150°C

I_C=15A, V_GE=4.5V T_C=150°C

Dynamic Characteristics

Gate Charge

Q_G(ON)I_C=10A, V_CE=12V, V_GE=5V

V_GE(TH)I_C=1.0mA, V_CE=V_GE

2.2

3.0

Gate to Emitter Threshold Voltage

Gate to Emitter Plateau Voltage

Switching Characteristics

Current Turn-On Delay Time-Resistive

Current Rise Time-Resistive

Current Turn-Off Delay Time-Inductive

Current Fall Time Inductive

1.3

V_GEP

I_C=10A, V_CE=12V

t_d(ON)R

t_rR

t_d(OFF)L

t_fL

0.48

2.1

μs

V_CE=14V, R_L=1ꢀ, V_GE=5V,

R_G=1Kꢀ, T_J=25°C

1.4 15

2.2 15

T_J= 25°C, L=3.0mHy, R_G=1Kꢀ,

Self Clamped Inductive Switching

SCIS

300 mJ

V_GE=5V

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

QW-R219-011.F

www.unisonic.com.tw

ISL9V3040D3S

Insulated Gate Bipolar Transistor



TEST CIRCUIT AND WAVEFORMS

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R219-011.F

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