J112 [FAIRCHILD]
N-Channel Switch; N沟道开关
| 型号： | J112 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Switch |
| 文件： | 总5页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
MMBFJ111
MMBFJ112
MMBFJ113
J111
J112
J113
G
D
TO-92
G
S
SOT-23
Mark: 6P / 6R / 6S
S
D
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabilized amplifiers. Sourced
from Process 51.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
35
- 35
V
V
VGS
Gate-Source Voltage
IGF
Forward Gate Current
50
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ ,Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
J111- J113
*MMBFJ111
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
350
2.8
125
225
1.8
mW
mW/°C
°C/W
Rθ
JC
Rθ
Thermal Resistance, Junction to Ambient
357
556
°C/W
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
N-Channel Switch
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
- 35
V
IG = - 1.0 µA, VDS = 0
IGSS
Gate Reverse Current
VGS = - 15 V, VDS = 0
- 1.0
nA
VGS(off)
Gate-Source Cutoff Voltage
VDS = 5.0 V, I = 1.0
A
µ
J111
J112
J113
- 3.0
- 1.0
- 0.5
- 10
- 5.0
- 3.0
V
V
V
D
ID(off)
Gate-Source Cutoff Voltage
VDS = 5.0 V, VGS = - 10 V
1.0
nA
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 15 V, IGS = 0
J111
J112
J113
J111
J112
J113
20
5.0
2.0
mA
mA
mA
Ω
Ω
Ω
Drain-Source On Resistance
VDS ≤ 0.1 V, VGS = 0
30
50
100
rDS(on)
SMALL-SIGNAL CHARACTERISTICS
Drain Gate & Source Gate On
Capacitance
VDS = 0, VGS = 0, f = 1.0 MHz
28
pF
Cdg(on)
Csg(on)
Cdg(off)
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
VDS = 0, VGS = - 10 V, f = 1.0 MHz
VDS = 0, VGS = - 10 V, f = 1.0 MHz
5.0
5.0
pF
pF
Csg(off)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%
Typical Characteristics
Common Drain-Source
Parameter Interactions
10
100
50
100
T
V
= 25°C
A
VGS = 0 V
TYP
= - 2.0 V
GS(off)
r DS
- 0.2 V
8
6
4
2
0
50
- 0.4 V
- 0.6 V
g
20
10
5
20
10
5
fs
- 0.8 V
I
V
r
V
I
, g fs @ V = 15V,
DS
= 0 PULSED
DSS
- 1.0 V
- 1.2 V
GS
@ 1.0 mA, V = 0
DS
GS
@ V
= 15V,
DS
GS(off)
- 1.4 V
= 1.0 nA
I DSS
D
_0.5
_ 1
_2
_ 5
_10
0
0.4
0.8
1.2
1.6
2
VGS (OF F) - GATE CUTOFF VOLTAGE (V)
VDS- DRAIN-SOURCE VOLTAGE (V)
N-Channel Switch
(continued)
Typical Characteristics (continued)
Transfer Characteristics
Transfer Characteristics
40
16
12
8
V
= - 3.0 V
V
= - 1.6 V
GS(off)
- 55°C
GS(off)
- 55°C
V DS = 15 V
25°C
125°C
25°C
125°C
30
20
10
0
V
= - 2.0 V
GS(off)
125°C
25°C
- 55°C
V
= - 1.1 V
GS(off)
125°C
25°C
V DS = 15 V
- 55°C
4
0
0
-1
-2
-3
0
-0.5
-1
-1.5
VGS- GATE-SOURCE VOLTAGE (V)
VGS- GATE-SOURCE VOLTAGE (V)
Transfer Characteristics
Transfer Characteristics
30
20
10
0
30
20
10
0
V
= - 3.0 V
GS(off)
- 55°C
V
= - 1.6 V
GS(off)
- 55°C
25°C
125°C
25°C
125°C
V
= - 2.0 V
GS(off)
- 55°C
25°C
125°C
V
= - 1.1 V
GS(off)
- 55°C
25°C
125°C
V DS = 15 V
V DS = 15 V
-0.5
0
-1
-2
-3
0
-1
-1.5
VGS- GATE-SOURCE VOLTAGE (V)
VGS- GATE-SOURCE VOLTAGE (V)
On Resistance vs Drain Current
100
Normalized Drain Resistance
vs Bias Voltage
125°C
V
GS(off)
100
50
µ
@ 5.0V, 10 A
V
TYP = - 2.0V
GS(off)
50
25°C
125°C
- 55°C
r DS
V
V
20
10
5
r DS
=
GS(off)
__GS___
1 -
TYP = - 7.0V
VGS(off)
20
10
25°C
r
@ V
= 0
GS
DS
2
1
- 55°C
0
0.2
0.4
0.6
0.8
1
1
2
5
10
20
50
100
VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)
I D - DRAIN CURRENT (mA)
N-Channel Switch
(continued)
Typical Characteristics (continued)
Transconductance
vs Drain Current
Output Conductance
vs Drain Current
100
100
10
1
T
= 25°C
= 15V
A
T
= 25°C
V
= 5.0V
A
DG
5.0V
V
10V
15V
20V
DG
f = 1.0 kHz
5.0V
10V
15V
f = 1.0 kHz
10V
15V
20V
V
= - 5.0V
GS(off)
20V
V
= - 1.4V
10
GS(off)
V = - 2.0V
GS(off)
V
= - 3.0V
GS(off)
V
= - 0.85V
GS(off)
0.1
1
0.1
0.01
0.1
I D - DRAIN CURRENT (mA)
10
1
10
I D - DRAIN CURRENT (mA)
Capacitance vs Voltage
Noise Voltage vs Frequency
100
10
1
100
50
V
= 15V
DG
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
≥
= 0.21 @ f 1.0 kHz
f
= 0.1 - 1.0 MHz
10
5
C
(V
= 0)
DS
is
I
= 1.0 mA
D
C
(V
DS
= 20)
is
I
= 10 mA
D
C
(V
= 0)
DS
rs
1
0.01
1
10
100
0
-4
-8
-12
-16
-20
f - FREQUENCY (kHz)
VGS - GATE-SOURCE VOLTAGE (V)
Power Dissipation vs
Ambient Temperature
Noise Voltage vs Current
100
10
1
V
= 15V
DG
350
300
250
200
150
100
50
f = 10 Hz
f = 100 Hz
f = 1.0 kHz
TO-92
SOT-23
f = 10 kHz
f = 100 kHz
0
0
25
50
75
100
125
150
0.01
0.1
1
10
TEMPERATURE (oC)
I
- DRAIN CURRENT (mA)
D
N-Channel Switch
(continued)
Typical Characteristics (continued)
Switching Turn-On Time
vs Gate-Source Voltage
Switching Turn-Off Time
vs Drain Current
25
100
80
T
V
V
t
= 25°C
V
t
= 3.0V
A
DD
t
r (ON)
V
= -2.2V
= 3.0V
= -12V
GS(off)
APPROX. I INDEPENDENT
D
DD
GS
r
20
15
10
5
V
= 3.0V
GS(off)
- 4.0V
t
(off)
T
= 25°C
60 - 7.5V
A
DEVICE
d(off)
I
= 6.6 mA
V
INDEPENDENT
D
GS(off)
40
2.5 mA
- 6.0V
t
d (ON)
V
= -12V
GS
20
0
t
d(off)
0
0
-2
-4
-6
-8
-10
0
2
4
6
8
10
V GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V)
ID - DRAIN CURRENT (mA)
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