KA5M0365RYDTU [FAIRCHILD]
Fairchild Power Switch(FPS); 飞兆功率开关（ FPS ）
| 型号： | KA5M0365RYDTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Fairchild Power Switch(FPS) |
| 文件： | 总20页 (文件大小：946K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
www.fairchildsemi.com
KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN,
KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)
Features
Description
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current(Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Current Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
• Internal High Voltage Sense FET
• Auto-Restart Mode
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
TO-220F-4L
8-DIP
1.6.7.8 Drain
2. GND
1
3. V
CC
1. GND 2. Drain 3. V
4. FB
CC
4. FB 5. NC
Internal Block Diagram
#3 V
CC
#2 DRAIN
32V
5V
Vref
Internal
bias
SFET
(*#3 V
CC
)
Good
logic
(*#1.6.7.8 DRAIN)
OSC
9V
S
R
Q
5µA
1mA
−
#4 FB
L.E.B
0.1V
2.5R
1R
+
(*#4 FB)
+
S
R
#1 GND
−
7.5V
27V
Q
Thermal S/D
OVER VOLTAGE S/D
+
(*#2 GND)
Power on reset
−
*Asterisk - KA5M0365RN, KA5L0365RN
Rev.1.0.5
©2002 Fairchild Semiconductor Corporation
KA5X03XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
KA5H0365R, KA5M0365R, KA5L0365R
Maximum Drain Voltage
V
650
650
V
V
V
D,MAX
Drain-Gate Voltage (R =1MΩ)
V
DGR
GS
Gate-Source (GND) Voltage
Drain Current Pulsed (1)
V
±30
GS
DM
I
12.0
3.0
A
DC
Continuous Drain Current (T =25°C)
I
I
A
DC
A
DC
C
D
Continuous Drain Current (T =100°C)
2.4
C
D
Single Pulsed Avalanche Energy (2)
E
358
mJ
AS
Maximum Supply Voltage
V
30
V
V
CC,MAX
Analog Input Voltage Range
V
-0.3 to V
75
FB
SD
P
W
W/°C
°C
D
Total Power Dissipation
Derating
0.6
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
J
+160
T
A
-25 to +85
°C
T
STG
-55 to +150
°C
KA5H0380R, KA5M0380R, KA5L0380R
Maximum Drain Voltage
V
800
800
±30
12.0
3.0
2.1
95
V
V
V
D,MAX
Drain-Gate Voltage (R =1MΩ)
V
DGR
GS
Gate-Source (GND) Voltage
Drain Current Pulsed (1)
V
GS
DM
I
A
DC
Continuous Drain Current (T =25°C)
I
I
A
C
D
DC
DC
Continuous Drain Current (T =100°C)
Single Pulsed Avalanche Energy (2)
A
C
D
E
mJ
V
AS
Maximum Supply Voltage
V
30
CC,MAX
Analog Input Voltage Range
V
-0.3 to V
75
V
FB
SD
P
W
D
Total Power Dissipation
Derating
0.6
W/°C
°C
°C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
A
T
STG
-55 to +150
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13µH, starting Tj = 25°C
2
KA5X03XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
KA5M0365RN, KA5L0365RN
Maximum Drain Voltage
V
650
650
V
V
V
D,MAX
Drain-Gate Voltage (R =1MΩ)
V
DGR
GS
Gate-Source (GND) Voltage
Drain Current Pulsed (1)
V
±30
GS
DM
I
12.0
0.42
0.28
127
A
DC
Continuous Drain Current (Ta=25°C)
Continuous Drain Current (Ta=100°C)
Single Pulsed Avalanche Energy (2)
Maximum Supply Voltage
I
I
A
DC
A
DC
D
D
E
mJ
AS
V
30
V
V
CC,MAX
Analog Input Voltage Range
V
-0.3 to V
1.56
FB
SD
P
W
W/°C
°C
D
Total Power Dissipation
Derating
0.0125
+160
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
J
T
A
-25 to +85
-55 to +150
°C
T
°C
STG
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13µH, starting Tj = 25°C
3
KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage
BV
DSS
V
V
=0V, I =50µA
650
-
-
-
-
V
GS
DS
D
=Max. Rating, V =0V
GS
50
µA
Zero Gate Voltage Drain Current
I
DSS
V
V
=0.8Max. Rating,
DS
-
-
200
µA
=0V, T =125°C
GS
C
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
R
V
V
=10V, I =0.5A
D
-
3.6
-
4.5
Ω
DS(ON)
GS
DS
gfs
=50V, I =0.5A
D
2.0
-
-
-
-
-
-
-
-
S
Ciss
-
-
-
-
-
-
-
720
40
V
=0V, V =25V,
DS
GS
Output Capacitance
Coss
Crss
pF
nS
f=1MHz
Reverse Transfer Capacitance
Turn On Delay Time
40
td(on)
tr
V
=0.5BV
, I =1.0A
DSS
150
100
150
42
DD
D
(MOSFET switching
time is essentially
independent of
Rise Time
Turn Off Delay Time
td(off)
tf
Fall Time
operating temperature)
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
=10V, I =1.0A,
D
GS
DS
Qg
-
-
34
=0.5BV
(MOSFET
DSS
switching time is essentially
independent of
operating temperature)
nC
Gate-Source Charge
Qgs
Qgd
-
-
7.3
-
-
Gate-Drain (Miller) Charge
13.3
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage
BV
DSS
V
V
=0V, I =50µA
800
-
-
-
-
V
GS
DS
D
=Max. Rating, V =0V
GS
250
µA
Zero Gate Voltage Drain Current
I
DSS
V
V
=0.8Max. Rating,
DS
-
-
1000
µA
=0V, T =125°C
GS
C
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
R
V
V
=10V, I =0.5A
D
-
4.0
2.5
779
75.6
24.9
40
5.0
Ω
DS(ON)
GS
DS
gfs
=50V, I =0.5A
D
1.5
-
-
-
-
-
-
-
-
S
Ciss
-
-
-
-
-
-
-
V
=0V, V =25V,
DS
GS
Output Capacitance
Coss
Crss
pF
nS
f=1MHz
Reverse Transfer Capacitance
Turn On Delay Time
td(on)
tr
V
=0.5BV
, I =1.0A
DSS
DD
D
(MOSFET switching
time is essentially
independent of
Rise Time
95
Turn Off Delay Time
td(off)
tf
150
60
Fall Time
operating temperature)
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
=10V, I =1.0A,
D
GS
DS
Qg
-
-
34
=0.5BV
(MOSFET
DSS
switching time is
essentially independent of
operating temperature)
nC
Gate-Source Charge
Qgs
Qgd
-
-
7.2
-
-
Gate-Drain (Miller) Charge
12.1
Note:
1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%
2.
1
R
S = ---
4
KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
KA5M0365RN, KA5L0365RN
Drain-Source Breakdown Voltage
BV
DSS
V
V
=0V, I =50µA
650
-
-
-
-
V
GS
DS
D
=Max. Rating, V =0V
GS
50
µA
Zero Gate Voltage Drain Current
I
DSS
V
V
=0.8Max. Rating,
DS
-
-
200
µA
=0V, T =125°C
GS
C
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
R
V
V
=10V, I =0.5A
D
-
3.6
-
4.5
Ω
DS(ON)
GS
DS
gfs
=50V, I =0.5A
D
2.0
-
-
-
-
-
-
-
-
S
Ciss
-
-
-
-
-
-
-
314.9
47
V
=0V, V =25V,
DS
GS
Output Capacitance
Coss
Crss
pF
nS
f=1MHz
Reverse Transfer Capacitance
Turn On Delay Time
9
td(on)
tr
V
=0.5BV
, I =1.0A
DSS
11.2
34
DD
D
(MOSFET switching
time is essentially
independent of
Rise Time
Turn Off Delay Time
td(off)
tf
28.2
32
Fall Time
operating temperature)
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
=10V, I =1.0A,
D
GS
DS
Qg
11.93
-
=0.5BV
(MOSFET
DSS
switching time is
essentially independent of
operating temperature)
nC
Gate-Source Charge
Qgs
Qgd
-
1.95
6.85
Gate-Drain (Miller) Charge
Note:
1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%
2.
1
R
S = ---
5
KA5X03XX-SERIES
Electrical Characteristics (Control Part) (Continued)
(Ta = 25°C unless otherwise specified)
Characteristic
Symbol
Test condition
Min. Typ. Max.
Unit
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
V
V
V
=GND
=GND
14
15
9
16
V
V
START
FB
V
8.4
9.6
STOP
FB
KA5H0365R
KA5H0380R
Initial Accuracy
F
90
61
100
67
110
73
kHz
kHz
OSC
KA5M0365R
KA5M0365RN
KA5M0380R
Initial Accuracy
F
OSC
KA5L0365R
KA5L0365RN
KA5L0380R
Initial Accuracy
F
OSC
45
50
55
kHz
Frequency Change With Temperature (2)
Maximum Duty Cycle
-
-25°C≤Ta≤+85°C
-
±5
±10
%
%
KA5H0365R
KA5H0380R
Dmax
Dmax
62
67
72
KA5M0365R
KA5M0365RN
KA5M0380R
KA5L0365R
KA5L0365RN
KA5L0380R
Maximum Duty Cycle
72
77
82
%
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
REFERENCE SECTION
Output Voltage (1)
I
Ta=25°C, 0V<Vfb<3V
0.7
6.9
4
0.9
7.5
5
1.1
8.1
6
mA
V
FB
V
Vfb>6.5V
SD
Idelay
Ta=25°C, 5V≤Vfb≤V
µA
SD
Vref
Ta=25°C
4.80 5.00 5.20
0.3
V
Temperature Stability (1)(2)
Vref/∆T
-25°C≤Ta≤+85°C
-
0.6 mV/°C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit
IOVER
Max. inductor current
1.89 2.15 2.41
A
PROTECTION SECTION
Over Voltage Protection
Thermal Shutdown Temperature (Tj) (1)
TOTAL STANDBY CURRENT SECTION
Start-up Current
V
V
>24V
25
27
29
-
V
OVP
CC
T
-
140
160
°C
SD
I
V
V
=14V
<28
-
-
100
7
170
12
µA
START
CC
Operating Supply Current
(Control Part Only)
I
mA
OP
CC
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
6
KA5X03XX-SERIES
Typical Performance Characteristics(SenseFET part)
(KA5H0365R, KA5M0365R, KA5L0365R)
10
10
VGS
Top: 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
150 oC
1
1
o
-25 C
25 oC
@Notes:
@Notes:
1. VDS = 30V
1. 300 s Pulse Test
µ
2. TC = 25o
C
2. 300 s PulseTest
µ
0.1
0.1
2
4
6
8
10
1
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
7
6
5
4
3
2
1
0
Vgs=10V
1
0.1
Vgs=20V
150oC
25 oC
@Notes :
1. VGS=0V
2. 300µs PulseTest
℃
@Note : Tj=25
0.01
0
1
2
3
4
5
0.4
0.6
0.8
1.0
1.2
ID,Drain Current [A]
V , Source-Drain Voltage [V]
SD
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
700
10
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
600
500
400
300
200
100
0
V
DS=130V
VDS=320V
VDS=520V
C
8
6
4
2
0
C
iss
Coss
@Note: ID=3.0A
20
C
rss
0
1
0
5
10
15
25
10
10
QG,Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge vs. Gate-Source Voltage
Figure 5. Capacitance vs. Drain-Source Voltage
7
KA5X03XX-SERIES
Typical Performance Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
@ Notes :
1. VGS = 0V
@ Notes:
1. VGS = 10V
2. ID = 1.5 A
2. ID = 250µA
-50
0
50
100
150
-50
0
50
100
150
o
TJ, Junction Temperature [oC]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage vs. Temperature
Figure 8. On-Resistance vs. Temperature
2
10
Operation in This Area
is Limited by R DS(on)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
s
µ
1
10
100
1 ms
s
µ
10 ms
DC
0
10
@ Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
-1
10
C
C
-2
10
0
1
2
3
10
10
10
10
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS , Drain-Source Voltage [V]
Figure 10. Max. Drain Current vs. Case Temperature
Figure 9. Max. Safe Operating Area
100
D=0.5
0.2
0.1
10-1
0.05
@ Notes :
1. Z JC(t)=1.25 oC/W Max.
θ
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM*Z JC(t)
θ
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
Figure 11. Thermal Response
8
KA5X03XX-SERIES
Typical Performance Characteristics (Continued)
(KA5H0380R, KA5M0380R, KA5L0380R)
1
1
10
10
V
GS
Top: 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
0
0
10
10
150 oC
@Notes:
1. 300µs PulseTest
2. TC = 25oC
@ Notes:
1. VDS = 30 V
2. 300µs PulseTest
25 oC
-25 oC
-1
-1
10
10
0
1
10
10
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. Output Characteristics
Figure 2. Thansfer Characteristics
Fig3. On-Resistance vs. Drain Current
8
7
6
5
4
3
2
1
0
10
Vgs=10V
Vgs=20V
1
25 oC
150 oC
@ Notes:
1. VGS = 0V
2. 300µs PulseTest
℃
@Note: Tj=25
0.1
0
1
2
3
4
0.4
0.6
0.8
1.0
VSD, Source-Drain Voltage [V]
ID,Drain Current
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
1000
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
10
900
800
700
600
500
400
300
200
100
0
V
DS=160V
C
V
DS=400V
8
6
4
2
0
V
DS=640V
C
iss
Coss
@Note: ID=3.0A
25
C
rss
0
1
0
5
10
15
20
30
10
10
VDS, Drain-Source Voltage [V]
QG,Total Gate Charge [nC]
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 6. Gate Charge vs. Gate-Source Voltage
9
KA5X03XX-SERIES
Typical Performance Characteristics (Continued)
(KA5H0380R, KA5M0380R, KA5L0380R)
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
@ Notes :
1. VGS = 0V
2. ID = 250µA
@ Notes:
1. VGS = 10V
2. ID = 1.5 A
-50
0
50
100
150
-50
0
50
100
150
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage vs. Temperature
Figure 8. On-Resistance vs. Temperature
2
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Operation in This Area
is Limited by R DS(on)
1
10
10
s
µ
100
s
µ
1 ms
10 ms
DC
0
10
@ Notes :
-1
10
1. T = 25 o
C
C
2. T = 150 o
C
J
3. Single Pulse
-2
10
1
2
3
10
10
10
40
60
80
100
120
140
TC, Case Temperature [oC]
VDS , Drain-Source Voltage [V]
Figure 10. Max. Drain Current vs. Case Temperature
Figure 9. Max. Safe Operating Area
100
D=0.5
@ Notes :
0.2
0.1
1. Zθ JC(t)=1.25 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM*Zθ JC(t)
10-1
0.05
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
Figure 11. Thermal Response
10
KA5X03XX-SERIES
Typical Performance Characteristics(SenseFET part) (Continued)
(KA5M0365RN, KA5L0365RN)
1
10
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
100
10-1
Bottom : 5.5 V
0
10
℃
150
℃
-55
℃
25
-1
10
※
Note :
μ
※
Note
1. 250 s Pulse Test
2. TC = 25
1. V = 50V
DS μ
℃
2. 250 s Pulse Test
0
10
1
10
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
101
100
10-1
VGS = 10V
VGS = 20V
℃
150
℃
25
※
Note :
1. V = 0V
2. 250 s Pulse Test
GS μ
※
℃
Note : T = 25
J
0
1
2
3
4
5
6
7
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
700
12
10
8
Ciss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
C
600
500
400
300
200
100
VDS = 130V
C
C
iss
V
= 325V
DS
VDS = 520V
oss
6
C
※
Note ;
rss
4
1. VGS = 0 V
2. f = 1 MHz
2
※
Note : ID = 3.0 A
0
10-1
100
101
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 6. Gate Charge vs. Gate-Source Voltage
11
KA5X03XX-SERIES
Typical Performance Characteristics (Continued)
( KA5M0365RN, KA5L0365RN)
1.15
2.5
1.10
2.0
1.05
1.5
1.00
1.0
0.95
※
Note :
※
Note :
1. VGS = 0 V
2. ID = 250
1. VGS = 10 V
μ
A
0.5
0.90
2. ID = 1.5 A
-50
0
50
100
150
-50
0
50
100
150
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance vs. Temperature
Figure 7. Breakdown Voltage vs. Temperature
0.5
101
Operation in This Area
is Limited by R DS(on)
0.4
0.3
0.2
0.1
0.0
10 µs
100 µs
100
1 ms
10 ms
100 ms
1 s
-1
10
10 s
DC
-2
10
-3
10
100
101
102
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [? ]
Figure 10. Max. Drain Current vs. Case Temperature
Figure 9. Max. Safe Operating Area
D=0.5
0.2
10
0.1
0.05
0.02
1
0.01
?
Notes :
1. Z? (t) = 80 ? /W Max.
JC
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? (t)
single pulse
JC
0.1
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
t1, Square Wave Pulse Duration [sec]
Figure 11. Thermal Response
12
KA5X03XX-SERIES
Typical Performance Characteristics (Control Part) (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
1.2
1.15
1.1
1.2
1.15
1.1
1.05
1.05
Ifb
1
0.95
0.9
Fosc
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25
50
75 100 125 150
-25
0
25 50 75 100 125 150
Figure 2. Feedback Source Current
Figure 1. Operating Frequency
1.1
1.2
1.15
1.1
1.05
1
I
1.05
over
0.95
Iop
1
0.95
0.9
0.85
0.8
0.9
0.85
0.8
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Figure 4. Peak Current Limit
Figure 3. Operating Supply Current
1.5
1.15
1.1
1.3
1.1
0.9
0.7
0.5
1.05
Istart
Vstart
1
0.95
0.9
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Figure 6. Start Threshold Voltage
Figure 5. Start up Current
13
KA5X03XX-SERIES
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
1.15
1.15
1.1
1.1
1.05
1.05
1
Vstop 1
0.95
Dmax
0.95
0.9
0.9
0.85
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Figure 8. Maximum Duty Cycle
Figure 7. Stop Threshold Voltage
1.2
1.15
1.15
1.1
1.05
1.1
1.05
Vz
Vsd
1
0.95
0.9
1
0.95
0.9
0.85
0.8
0.85
-25
0
25
50
75 100 125 150
-25
0
25
50
75 100 125 150
Figure 10. Shutdown Feedback Voltage
Figure 9. V
Zener Voltage
CC
1.15
1.2
1.15
1.1
1.05
1.1
1.05
Idelay
1
Vovp
1
0.95
0.9
0.95
0.9
0.85
0.8
0.85
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Figure 12. Over Voltage Protection
Figure 11. Shutdown Delay Current
14
KA5X03XX-SERIES
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
1.15
2.5
2
1.1
1.05
1.5
Vss
1
(
)
1
Rdson
0.95
0.9
0.5
0
0.85
-25
0
25
50
75 100 125 150
-25
0
25 50 75 100 125 150
Figure 14. Static Drain-Source on Resistance
Figure13. Soft Start Voltage
15
KA5X03XX-SERIES
Package Dimensions
TO-220F-4L
16
KA5X03XX-SERIES
Package Dimensions (Continued)
TO-220F-4L(Forming)
17
KA5X03XX-SERIES
Package Dimensions (Continued)
8-DIP
18
KA5X03XX-SERIES
Ordering Information
Product Number
KA5H0365RTU
Package
Marking Code
BV
DSS
F
R
DS(on)
OSC
TO-220F-4L
5H0365R
650V
100kHz
67kHz
50kHz
3.6Ω
KA5H0365RYDTU
TO-220F-4L(Forming)
KA5M0365RTU
TO-220F-4L
5M0365R
5L0365R
650V
650V
3.6Ω
3.6Ω
KA5M0365RYDTU
TO-220F-4L(Forming)
KA5L0365RTU
TO-220F-4L
KA5L0365RYDTU
TO-220F-4L(Forming)
KA5M0365RN
KA5L0365RN
8-DIP
8-DIP
5M0365R
5L0365R
650V
650V
67kHz
50kHz
3.6Ω
3.6Ω
Product Number
KA5H0380RTU
Package
TO-220F-4L
Marking Code
BV
F
R
DS(on)
DSS
OSC
5H0380R
5M0380R
5L0380R
800V
800V
800V
100kHz
67kHz
50kHz
4.6Ω
KA5H0380RYDTU
TO-220F-4L(Forming)
KA5M0380RTU
TO-220F-4L
4.6Ω
4.6Ω
KA5M0380RYDTU
TO-220F-4L(Forming)
KA5L0380RTU
TO-220F-4L
KA5L0380RYDTU
TO-220F-4L(Forming)
TU :Non Forming Type
YDTU : Forming type
19
KA5X03XX-SERIES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
12/12/02 0.0m 001
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2002 Fairchild Semiconductor Corporation
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