KSA954OD74Z [FAIRCHILD]

Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92;


型号：	KSA954OD74Z
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 放大器晶体管
文件：	总5页 (文件大小：50K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

KSA954

Audio Frequency Amplifier

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Ratings

-80

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

* Collector Current (Pulse)

Collector Dissipation

CBO

-80

CEO

EBO

-5

-300

-500

600

°C

Junction Temperature

150

Storage Temperature

-55 ~ 150

°C

STG

* PW≤10ms, Duty Cycle≤50% Pulsed

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

Test Condition

Min.

Typ.

Max.

-100

400

Units

= -80V, I =0

CBO

EBO

= -5V, I =0

= -1V, I = -50mA

200

FE1

FE2

= -2V, I = -300mA

(on)

(sat)

* Base Emitter On Voltage

= -6V, I = -10mA

-600

-660

-0.85

-0.15

-700

-1.2

-0.6

* Base Emitter Saturation Voltage

Collector -Emitter Saturation Voltage

Output Capacitance

I = -300mA, I = -30mA

C B

I = -300mA, I = -30mA

= -6V, I =0, f=1MHz

MHz

Current Gain-Bandwidth Product

= -6V, I = -10mA

100

* Pulse Test: PW≤350µs, Duty Cycle≤2%

Classification

FE1

Classification

90 ~ 180

135 ~ 270

200 ~ 400

FE1

Rev. A, February 2000

Typical Characteristics

-500

-20

-16

-12

-8

I_B= -60µA

P_T= 600mW

-400

I_B= -5.0mA

I_B= -50µA

I_B= -40µA

= -4.5mA

^BI_B= -4.0mA

I_B= -3.5mA

I_B= -3.0mA

I_B= -2.5mA

-300

-200

-100

I_B= -30µA

I_B= -2.0mA

I_B= -1.5mA

I_B= -1.0mA

I_B= -20µA

I_B= -10µA

P_T= 600mW

I_B= -0.5mA

-4

I_B= 0

-1

-2

-3

-4

-5

-10

-20

-30

-40

-50

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characterstic

Figure 2. Static Characteristic

-10

1000

PULSE

I_C= 10 I_B

PULSE

V_CE=-2.0V

-1

100

V_BE(sat)

V_CE= -1.0V

-0.1

V_CE(sat)

-0.01

-0.1

-1

-10

-100

-1000

-1

-10

-100

-1000

I_C[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100

-1000

-100

-10

f = 1MHz

V_CE= -6V

PULSE

C_ib(I_C=0)

C_ob(I_E=0)

-1

-0.1

-0.4

-1

-10

-100

-0.5

-0.6

-0.7

-0.8

-0.9

V_CB[V], COLLECTOR-BASE VOLTAGE

V_EB[V], EMITTER-BASE VOLTAGEE

V_BE[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage

Figure 6. Input Output Capacitance

Rev. A, February 2000

Typical Characteristics ^(Continued)

1000

-1000

-100

-10

duty cycle < 2%

V_CE= -6.0V

100

-1

-10

-100

100

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_E[mA], COLLECTOR CURRENT

Figure 7. Gain Bandwidth Product

Figure 8. Safe Operating Area

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

100

125

150

175

T_a[^oC], AMBIENT TEMPERATURE

Figure 9. Power Derating

Rev. A, February 2000

Package Demensions

TO-92

+0.25

–0.15

4.58

0.46 ±0.10

+0.10

–0.05

1.27TYP

0.38

[1.27 ±0.20

]

[1.27 ±0.20]

3.60 ±0.20

(R2.29)

Dimensions in Millimeters

Rev. A, February 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

HiSeC™

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

Bottomless™

CoolFET™

CROSSVOLT™

E²CMOS™

FACT™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench^®

QFET™

VCX™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

FASTr™

GTO™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. E

相关型号：