KSC2335YTU [FAIRCHILD]
Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN;型号: | KSC2335YTU |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 局域网 开关 晶体管 |
文件: | 总4页 (文件大小:51K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KSC2335
High Speed, High Voltage Switching
•
Industrial Use
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
500
V
V
V CEO
VEBO
IC
400
7
V
7
15
A
ICP
A
IB
3.5
A
PC
Collector Dissipation (T =25°C)
1.5
W
W
°C
°C
a
P
Collector Dissipation (T =25°C)
40
C
C
TJ
Junction Temperature
Storage Temperature
150
TSTG
- 55 ~ 150
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
400
450
Max.
Units
V
V
(sus)
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
I
I
= 3A, I = 0.6A, L = 1mH
V
V
CEO
C
C
B1
(sus)1
= 3A, I = -I = 0.6A
B1 B2
CEX
V
(off) = -5V, L = 180µH, Clamped
BE
V
(sus)2
Collector-Emitter Sustaining Voltage
I
= 6A,I = 2A, I = -0.6A
400
V
CEX
C
B1
B2
V
V
V
(off) = -5V, L = 180µH, Clamped
BE
CB
CE
I
I
I
I
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
= 400V, I = 0
10
1
µA
mA
µA
CBO
CER
E
= 400V, R = 51Ω @ T =125°C
BE
C
V
= 400V, V (off)= -1.5V
10
1
CEX1
CEX2
CE
BE
V
= 400V, V (off)= -1.5V @
mA
CE
BE
T =125°C
C
I
Emitter Cut-off Current
* DC Current Gain
V
= 5V, I = 0
10
µA
EBO
EB
C
h
h
h
V
V
V
= 5V, I = 0.1A
20
20
10
80
80
1
FE
CE
CE
CE
C
= 5V, I = 1A
FE2
FE3
C
= 5V, I = 3A
C
V
V
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
I
I
= 3A, I = 0.6A
1
1.2
1
V
V
CE
BE
C
C
B
(sat)
= 3A, I = 0.6A
B
t
t
t
V
I
=150V, I = 3A
µs
µs
µs
ON
CC
C
= -I = 0.6A
Storage Time
B1
B2
2.5
1
STG
F
R = 50Ω
L
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
Classification
FE
Classification
R
O
Y
h
20 ~ 40
30 ~ 60
40 ~ 80
FE2
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
IB=0.45A
IB=0.40A
5
1000
100
10
IB=0.50A
VCE = 5 V
Pulsed
IB=0.35A
IB=0.30A
4
3
2
1
0
IB=0.25A
IB=0.20A
IB=0.15A
IB=0.10A
IB=0.05A
1
0.01
0.1
1
10
0
1
2
3
4
5
Ic[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
160
10
IC = 5 IB
Pulsed
140
120
100
80
1
VBE(SAT)
S/b Limited
60
0.1
40
Dissipation Limited
VCE(SAT)
20
0
0.01
0.01
0
50
100
150
200
0.1
1
10
TC [oC], CASE TEMPERATURE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Derating Curve of Safe Operating Areas
10
8
100
Single Pulse
PW = 10 us
10
50 us
6
Dissipation Limoted
1
0.1
0.1 ms
0.3 ms
S/b Limited
4
1 ms
100 ms
2
0.01
1E-3
10 ms
0
0
100
200
300
400
500
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Forward Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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