KSC2335Y [FAIRCHILD]

High Speed, High Voltage Switching; 高速，高电压开关


型号：	KSC2335Y
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	High Speed, High Voltage Switching 高速，高电压开关晶体开关晶体管局域网
文件：	总4页 (文件大小：58K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

KSC2335

High Speed, High Voltage Switching

•

Industrial Use

TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current (DC)

500

V _CEO

V_EBO

I_C

400

I_CP

I_B

3.5

P_C

Collector Dissipation (T =25°C)

1.5

°C

Collector Dissipation (T =25°C)

T_J

Junction Temperature

Storage Temperature

150

T_STG

- 55 ~ 150

* PW≤300µs, Duty Cycle≤10%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

400

450

Max.

Units

(sus)

Collector-Emitter Sustaining Voltage

= 3A, I = 0.6A, L = 1mH

CEO

(sus)1

= 3A, I = -I = 0.6A

B1 B2

CEX

(off) = -5V, L = 180µH, Clamped

(sus)2

Collector-Emitter Sustaining Voltage

= 6A,I = 2A, I = -0.6A

400

CEX

(off) = -5V, L = 180µH, Clamped

Collector Cut-off Current

= 400V, I = 0

µA

CBO

CER

= 400V, R = 51Ω @ T =125°C

= 400V, V (off)= -1.5V

CEX1

CEX2

= 400V, V (off)= -1.5V @

T =125°C

Emitter Cut-off Current

* DC Current Gain

= 5V, I = 0

µA

EBO

= 5V, I = 0.1A

= 5V, I = 1A

FE2

FE3

= 5V, I = 3A

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Turn ON Time

= 3A, I = 0.6A

1.2

(sat)

= 3A, I = 0.6A

=150V, I = 3A

µs

= -I = 0.6A

Storage Time

2.5

STG

R = 50Ω

Fall Time

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

Classification

20 ~ 40

30 ~ 60

40 ~ 80

FE2

Rev. A1, June 2001

Typical Characteristics

I_B=0.45A

I_B=0.40A

1000

100

I_B=0.50A

V_CE= 5 V

Pulsed

I_B=0.35A

I_B=0.30A

I_B=0.25A

I_B=0.20A

I_B=0.15A

I_B=0.10A

I_B=0.05A

0.01

0.1

Ic[A], COLLECTOR CURRENT

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. DC current Gain

160

I_C= 5 I_B

Pulsed

140

120

100

V_BE(SAT)

S/b Limited

0.1

Dissipation Limited

V_CE(SAT)

0.01

100

150

200

0.1

T_C[^oC], CASE TEMPERATURE

V_CB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Derating Curve of Safe Operating Areas

100

Single Pulse

PW = 10 us

50 us

Dissipation Limoted

0.1

0.1 ms

0.3 ms

S/b Limited

1 ms

100 ms

0.01

1E-3

10 ms

100

200

300

400

500

100

1000

10000

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Reverse Bias Safe Operating Area

Figure 6. Forward Bias Safe Operating Area

Rev. A1, June 2001

Package Demensions

TO-220

4.50 ±0.20

9.90 ±0.20

(8.70)

+0.10

1.30

–0.05

ø3.60 ±0.10

(45

)

1.27 ±0.10

1.52 ±0.10

0.80 ±0.10

+0.10

–0.05

0.50

2.40 ±0.20

2.54TYP

[2.54 ±0.20

]

[2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

Rev. A1, June 2001

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

FAST^®

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

OPTOPLANAR™

PACMAN™

POP™

STAR*POWER™

Stealth™

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TruTranslation™

TinyLogic™

UHC™

Power247™

PowerTrench^®

QFET™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

QS™

QT Optoelectronics™

Quiet Series™

SLIENT SWITCHER^®

SMART START™

UltraFET^®

VCX™

FACT™

FACT Quiet Series™

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H3

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