KSC5024Y [FAIRCHILD]

Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN;


型号：	KSC5024Y
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN 晶体晶体管功率双极晶体管开关局域网
文件：	总5页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

KSC5024

High Voltage and High Reliabilty

•

High Speed Switching

Wide SOA

TO-3P

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter- Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

800

CBO

CEO

EBO

500

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Sustaining Voltage

= 1mA, I = 0

800

500

CBO

CEO

EBO

= 5mA, I = 0

I = 1mA, I = 0

(sus)

= 3.5A, I =-I =1.4A

500

CEX

L = 500µH, Clamped

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

= 500V, I = 0

µA

CBO

EBO

= 5V, I = 0

= 5V, I = 0.8A

FE1

FE2

=5V, I = 4A

(Sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

= 4A, I = 0.8A

1.5

= 10V, I =0, f = 1MHz

120

MHz

µs

Current Gain Bandwidth Product

Turn ON Time

= 10V, I =0.8A

= 200V

0.5

I = 5I =-2.5I =5A

Storage Time

µs

R = 40Ω

Time Fall Time

0.3

µs

Classificntion

Classification

15 ~ 30

20 ~ 40

30 ~ 50

FE1

Rev. A1, June 2001

Typical Characteristics

1000

100

V_CE= 5V

I_B= 1.6A

I_B= 1.4A

I_B= 1.2A

I_B= 1A

I_B= 800mA

I_B= 600mA

I_B= 500mA

I_B= 400mA

I_B= 300mA

I_B= 200mA

I_B= 100mA

I_B= 50mA

I_B= 0

0.01

0.1

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_C[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

I_C= 5 I_B

V_CE= 5V

V_BE(sat)

0.1

V_CE(sat)

0.01

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

I_C[A], COLLECTOR CURRENT

V_BE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

100

I_C=5.I_B

50µs

I_C(max).(Pulse)

I_C(max)

t_STG

t_F

t_ON

0.1

0.01

0.1

100

1000

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_C[A], COLLECTOR CURRENT

Figure 5. Switching Time

Figure 6. Safe Operating Area

Rev. A1, June 2001

Typical Characteristics ^(Continued)

100

0.1

0.01

100

1000

10000

100

125

150

175

V_CE[V], COLLECTOR-EMITTER VOLTAGE

T_C[^oC], CASE TEMPERATURE

Figure 7. Reverse Bias Safe Operating Area

Figure 8. Power Derating

Rev. A1, June 2001

Package Demensions

TO-3P

15.60 ±0.20

4.80 ±0.20

13.60 ±0.20

9.60 ±0.20

+0.15

ø3.20 ±0.10

1.50

–0.05

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20

1.40 ±0.20

+0.15

–0.05

0.60

5.45TYP

[5.45 ±0.30

]

[5.45 ±0.30]

Dimensions in Millimeters

Rev. A1, June 2001

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

FAST^®

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

OPTOPLANAR™

PACMAN™

POP™

STAR*POWER™

Stealth™

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TruTranslation™

TinyLogic™

UHC™

Power247™

PowerTrench^®

QFET™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

QS™

QT Optoelectronics™

Quiet Series™

SLIENT SWITCHER^®

SMART START™

UltraFET^®

VCX™

FACT™

FACT Quiet Series™

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H3

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