KSC5338D [FAIRCHILD]
High Voltage Power Switch Switching Application; 高压电源开关切换应用程序
| 型号： | KSC5338D |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | High Voltage Power Switch Switching Application |
| 文件： | 总8页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC5338D/KSC5338DW
D2-PAK
Equivalent Circuit
C
High Voltage Power Switch Switching
Application
1
•
•
•
•
•
Wide Safe Operating Area
Built-in Free-Wheeling Diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
Two Package Choices : TO-220 or D2-PAK
TO-220
B
E
1
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Base Voltage
1000
CBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
450
V
CEO
EBO
12
V
I
I
I
I
5
A
C
10
A
CP
B
2
A
*Base Current (Pulse)
4
75
A
BP
P
Power Dissipation(T =25°C)
W
°C
°C
C
C
T
T
Junction Temperature
150
J
Storage Temperature
- 55 ~ 150
STG
* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Characteristics
Junction to Case
Junction to Ambient
Maximun Lead Temperature for Soldering
Rating
1.65
Unit
R
R
Thermal Resistance
°C/W
θjc
θja
62.5
T
270
°C
L
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
1000
450
12
Typ.
Max.
Units
V
BV
Collector-Base Breakdown Voltage
I =1mA, I =0
CBO
CEO
EBO
C
E
BV
BV
Collector-Emitter Breakdown Voltage I =5mA, I =0
V
C
B
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I =1mA, I =0
V
E
C
I
I
V
=800V, I =0
10
100
500
100
500
10
µA
µA
µA
µA
µA
µA
CBO
CB
E
Collector Cut-off Current
V
=1000V,
T =25°C
C
CES
CEO
EBO
CES
I
=0
EB
T =125°C
C
I
Collector Cut-off Current
V
=450V, I =0
T =25°C
C
CE
B
T =125°C
C
I
Emitter Cut-off Current
DC Current Gain
V
V
=10V, I =0
C
EB
h
=1V, I =0.8A
T =25°C
15
10
6
25
14
FE
CE
C
C
T =125°C
C
V
V
=1V, I =2A
T =25°C
9
CE
CE
C
C
T =125°C
4
6
C
=2.5V, I =1A
T =25°C
18
14
25
C
C
T =125°C
18
C
V
(sat)
Collector-Emitter Saturation Voltage
I =0.8A, I =0.08A T =25°C
0.35
0.55
0.47
0.9
0.9
1.8
0.22
0.3
0.8
0.65
0.9
0.8
550
60
0.5
0.75
0.75
1.1
V
V
CE
C
B
C
T =125°C
C
I =2A, I =0.4A
T =25°C
V
C
B
C
T =125°C
V
C
I =0.8A, I =0.04A T =25°C
1.5
V
C
B
C
T =125°C
2.5
V
C
I =1A, I =0.2A
T =25°C
0.5
V
C
B
C
T =125°C
0.6
V
C
V
(sat)
Base-Emitter Saturation Voltage
I
=0.8A,
T =25°C
1.0
V
BE
CS
C
I =0.08A
B
T =125°C
0.9
V
C
I =2A, I =0.4A
T =25°C
1.0
V
C
B
C
T =125°C
0.9
V
C
C
C
Input Capacitance
V
=10V, I =0.5A, f=1MHz
750
100
pF
pF
MHz
V
ib
EB
C
Output Capacitance
V
=10V, I =0, f=1MHz
E
ob
CB
f
Current Gain Bandwidth Product
Diode Forward Voltage
I =0.5A,V =10V
11
T
C
CE
V
I =1A, I =1mA,
T =25°C
0.86
0.79
0.95
0.88
1.3
1.5
F
F
C
C
I =0
E
T =125°C
V
C
I =2A
T =25°C
V
F
C
T =125°C
V
C
t
Diode Froward Recvery Time
(di/dt=10A/µs)
I =0.4A
460
360
325
ns
ns
ns
fr
F
I =1A
F
I =2A
F
V
Dynamic Saturation Voltage
I =1A, I =100mA T =25°C
8
15
2.9
8
V
V
V
V
V
V
V
V
CE(DSAT)
C
B1
C
V
=300V at 1 µs
CC
T =125°C
C
I =1A, I =100mA T =25°C
C
B1
C
V
=300V at 3 µs
CC
T =125°C
C
I =2A, I =400mA T =25°C
9
C
B1
C
V
=300V at 1 µs
CC
T =125°C
17
1.9
8.5
C
I =2A, I =400mA T =25°C
C
B1
C
V
=300V at 3 µs
CC
T =125°C
C
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min
Typ.
Max.
Units
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40µs)
t
t
t
t
Turn ON Time
Storage Time
Fall Time
I =2.5A, I =500mA
500
750
1.5
ns
µs
ns
ns
ns
µs
µs
ns
ns
ns
ns
µs
µs
ns
ns
ON
STG
F
C
B1
I
=1A, V =250V, R = 100Ω
B2
CC L
1.2
100
100
150
1.4
200
150
Turn ON Time
I =2A,
T =25°C
C
ON
C
I
I
V
=400mA
B1
T =125°C
C
=1A,
=300V
B2
t
t
t
t
t
Storage Time
Fall Time
T =25°C
2.2
150
150
2.1
STG
F
C
CC
T =125°C
1.7
C
R = 150Ω
L
T =25°C
90
C
T =125°C
150
120
150
C
Turn ON Time
Storage Time
Fall Time
I =2.5A,
T =25°C
C
ON
STG
F
C
I
I
=500mA
=5mA,
B1
T =125°C
C
B2
T =25°C
1.8
C
V
=300V
CC
T =125°C
2.6
110
160
C
R = 120Ω
L
T =25°C
150
C
T =125°C
C
INDUCTIVE LOAD SWITCHING (V =15V)
CC
t
t
t
t
t
t
t
t
t
Storage Time
I =2.5A,
T =25°C
1.9
2.4
2.2
200
500
2.25
150
450
0.8
µs
µs
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
STG
C
C
I
I
=500mA
=0.5A,
B1
T =125°C
C
B2
Fall Time
T =25°C
160
330
350
750
F
C
V =350V
Z
T =125°C
C
L =300µH
C
Cross-over Time
Storage Time
Fall Time
T =25°C
C
C
T =125°C
C
I =2A,
T =25°C
1.95
STG
F
C
C
I
I
=400mA
=0.4A,
B1
T =125°C
2.9
120
270
300
700
0.6
1.0
70
C
B2
T =25°C
C
V =300V
Z
T =125°C
C
L =200µH
C
Cross-over Time
Storage Time
Fall Time
T =25°C
C
C
T =125°C
C
I =1A,
T =25°C
C
STG
F
C
I
I
=100mA
=0.5A,
B1
T =125°C
C
B2
T =25°C
C
V =300V
Z
T =125°C
110
80
C
L =200µH
C
Cross-over Time
T =25°C
130
C
C
T =125°C
170
C
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
5
100
10
1
IB = 1A
VCE = 1V
0.9A
0.8A
0.7A
0.6A
Tj = +25OC
4
3
2
1
0
0.5A
0.4A
Tj = -25OC
0.3A
0.2A
Tj = 125OC
IB = 0.1A
IB = 0
0
2
4
6
8
10
0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
10
VCE = 5V
Tj = +25OC
IC = 5IB
Tj = 125OC
Tj = -25OC
10
1
Tj = 125OC
Tj = +25OC
Tj = -25OC
1
0.01
0.1
1E-3
0.1
1
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
10
10
IC = 5IB
IC = 10IB
Tj = 125OC
1
1
Tj = -25OC
Tj = +25OC
Tj = 125OC
Tj = +25OC
Tj = -25OC
0.1
1E-3
0.1
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics (Continued)
10
2000
1000
IC = 10IB
f = 1MHz
Cib
1
Tj = -25OC
100
Tj = 125OC
Cob
Tj = +25OC
0.1
1E-3
10
0.01
0.1
1
10
1
10
100
REVERSE VOLTAGE [V]
IC[A], COLLECTOR CURRENT
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Collector Output Capacitance
10
500
VCC = 250V
di/dt = 10A/µS
TC = 25OC
IC = 5IB1 = 2.5IB2
tSTG
450
1
400
350
300
250
0.1
tF
0.01
1
10
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.2
IF[A], FORWARD CURRENT
IC[A], COLLECTOR CURRENT
Figure 9. Forward Recovery Time
Figure 10. Switching Time
2000
1500
1000
500
0
5
4
3
2
IBon = IBoff
IBon = IBoff
IC = 2A @ Tj=125O
C
VCC = 15V
VZ = 300V
LC = 200µH
VCC = 15V
VZ = 300V
LC = 200µH
IC = 2A @ Tj=125O
C
IC = 1A @ Tj=125O
C
IC = 1A @ Tj=125O
IC = 2A @ Tj=25O
C
C
IC = 2A @ Tj=25O
C
IC = 1A @ Tj=25O
C
IC = 1A @ Tj=25O
C
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
hFE, FORCED GAIN
hFE, FORCED GAIN
Figure 11. Induction Storage Time
Figure 12. Inductive Crossover Time
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics (Continued)
1000
100
10
IBon = IBoff
IC = 2A @ Tj=125O
C
VCC = 15V
VZ = 300V
LC = 200µH
800
600
400
200
0
1µS
10µS
5mS
1mS
IC = 1A @ Tj=125O
C
1
DC
IC = 2A @ Tj=25O
C
0.1
0.01
IC = 1A @ Tj=25O
C
2
4
6
8
10
12
14
16
18
20
10
100
1000
hFE, FORCED GAIN
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 13. Inductive Fall Time
Figure 14. Safe Operating Area
100
75
50
25
0
6
5
4
3
2
1
0
TC = 25O
C
LC = 2mH
-5V
-1.5V
0V
0
25
50
75
100
125
150
175
200
300
400
500
600
700
800
900
1000
TC[OC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 15. Reverse Bias Safe Operating
Figure 16. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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