KSC5402DT [FAIRCHILD]
High Voltage High Speed Power Switch Application; 高压高速功率开关应用
| 型号： | KSC5402DT |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | High Voltage High Speed Power Switch Application |
| 文件： | 总10页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC5402D/KSC5402DT
D-PAK
High Voltage High Speed Power Switch
Application
Equivalent Circuit
C
1
•
•
•
•
•
Wide Safe Operating Area
Built-in Free Wheeling Diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
Two Package Choices; D-PAK or TO-220
TO-220
B
1
E
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor Planar Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Base Voltage
1000
450
12
2
CBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
V
CEO
EBO
V
I
I
I
I
A
C
5
A
CP
B
1
A
*Base Current (Pulse)
2
A
BP
P
Power Dissipation(T =25°C) : D-PAK *
30
50
W
C
C
: TO-220
T
T
Junction Temperature
150
°C
°C
J
Storage Temperature
- 65 ~ 150
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Thermal Characteristics T =25°C unless otherwise noted
C
Rating
Unit
Symbol
Characteristics
TO-220
2.5
D-PAK
4.17 *
50
R
R
Thermal Resistance
Junction to Case
Junction to Ambient
°C/W
°C
θjc
62.5
270
θja
T
Maximum Lead Temperature for Soldering Purpose
; 1/8” from Case for 5 Seconds
270
L
* Mounted on 1” square PCB (FR4 ro G-10 Material)
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
1000
450
12
Typ.
1090
525
14
Max.
Units
V
BV
Collector-Base Breakdown Voltage
I =1mA, I =0
CBO
CEO
EBO
C
E
BV
BV
Collector-Emitter Breakdown Voltage I =5mA, I =0
V
C
B
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I =1mA, I =0
V
E
C
I
I
I
V
=1000V,
T =25°C
0.03
1.2
100
500
100
500
100
µA
CES
CES
C
I
=0
EB
T =125°C
C
Collector Cut-off Current
V
=450V, V =0 T =25°C
0.3
µA
µA
CEO
CE
B
C
T =125°C
15
C
Emitter Cut-off Current
DC Current Gain
V
V
=10V, I =0
0.01
29
EBO
EB
C
h
=1V, I =0.4A T =25°C
14
8
FE
CE
C
C
T =125°C
17
C
V
=1V, I =1A
T =25°C
6
9
CE
C
C
T =125°C
4
6
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I =0.4, I =0.04A
T =25°C
0.25
0.4
0.6
1.0
0.75
1.2
1.0
0.9
1.1
1.0
500
100
CE
C
B
C
T =125°C
C
I =1A, I =0.2A
T =25°C
0.3
V
V
C
B
C
T =125°C
0.65
0.78
0.65
0.85
0.75
330
35
C
I =0.4A,
T =25°C
V
BE
C
C
I =0.04A
B
T =125°C
V
C
I =1A, I =0.2A
T =25°C
V
C
B
C
T =125°C
V
C
C
C
Input Capacitance
V
=8V, I =0, f=1MHz
pF
pF
MHz
V
ib
EB
C
Output Capacitance
V
=10V, I =0, f=1MHz
E
ob
CB
f
Current Gain Bandwidth Product
Diode Forward Voltage
I =0.5A, V =10V
11
T
C
CE
V
I =1A
T =25°C
0.86
0.75
0.6
1.5
1.2
F
F
C
I =0.2A
T =25°C
V
F
C
T =125°C
V
C
I =0.4A
T =25°C
0.8
1.3
V
F
C
T =125°C
0.65
V
C
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min
Typ.
Max.
Units
t
Diode Froward Recvery Time
(di/dt=10A/µs)
I =0.2A
540
520
480
ns
ns
ns
fr
F
I =0.4A
F
I =1A
F
V
(DSAT)
Dynamic Saturation Voltage
I =0.4A,
@ 1µs
@ 3µs
7.5
2.5
V
V
CE
C
I
=40mA
B1
V
=300V
CC
I =1A,
@ 1µs
@ 3µs
11.5
1.5
V
V
C
I
=200mA
B1
V
=300
CC
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20µs)
t
Turn On Time
I =1A,
T =25°C
110
135
150
ns
ns
µs
µs
ON
C
C
I
I
=200mA
=150mA
B1
T =125°C
C
B2
t
Turn Off Time
T =25°C
0.95
1.25
OFF
C
V
=300V
CC
T =125°C
1.4
C
R = 300Ω
L
INDUCTIVE LOAD SWITCHING (V =15V)
CC
t
t
t
t
t
t
t
t
t
Storage Time
I =0.4A,
T =25°C
0.56
0.7
60
0.65
175
175
2.75
175
350
1.2
µs
µs
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
STG
C
C
I
I
=40mA
=200mA,
B1
T =125°C
C
B2
Fall Time
T =25°C
F
C
Vz=300V
L =200H
T =125°C
75
C
C
Cross-over Time
Storage Time
Fall Time
T =25°C
90
C
C
T =125°C
90
C
I =0.8A,
T =25°C
C
STG
F
C
I
I
=160mA
=160mA,
B1
T =125°C
3
C
B2
T =25°C
110
180
125
185
1.1
C
Vz=300V
L =200H
T =125°C
C
C
Cross-over Time
Storage Time
Fall Time
T =25°C
C
C
T =125°C
C
I =1A,
T =25°C
C
STG
F
C
I
I
=200mA,
=500mA,
B1
B2
T =125°C
1.35
105
75
C
T =25°C
150
150
C
V =300V
Z
T =125°C
C
L =200µH
C
Cross-over Time
T =25°C
125
100
C
C
T =125°C
C
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
Typical Characteristics
3.0
IB = 1A
VCE = 1V
900mA
800mA
700mA
600mA
500mA
400mA
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
℃
TJ=125
℃
TJ=25
300mA
200mA
100mA
IB = 0
0
1
2
3
4
5
6
1E-3
0.01
0.1
1
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VCE = 6V
IC = 5 IB
℃
TJ=125
100
10
℃
TJ=25
1
10
℃
TJ=125
℃
TJ=25
0.1
1
1E-3
0.01
0.1
1
1E-3
0.01
0.1
1
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
10
IC = 5 IB
IC = 10 IB
10
1
℃
TJ=25
1
℃
TJ=125
℃
TJ=125
℃
TJ=25
0.1
0.1
1E-3
0.01
0.1
1
1E-3
0.01
0.1
1
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Collector-Emitter Saturation Voltage
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
Typical Characteristics (Continued)
10
1000
100
10
IC = 10 IB
f=1MHz
Cib
1
℃
TJ=25
℃
TJ=125
Cob
0.1
1E-3
0.01
0.1
1
1
10
100
REVERSE VOLTAGE [V]
IC[A], COLLECTOR CURRENT
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Collector Output Capacitance
2.0
550
℃
TJ=25
1.5
1.0
0.5
0.0
2.0A
1.5A
500
1.0A
0.4A
IC=0.2A
450
0.0
1E-3
0.01
0.1
1
0.5
1.0
IC[A], COLLECTOR CURRENT
IF [A], FORWARD CURRENT
Figure 9. Typical Collector Saturation Region
Figure 10. Forward Recovery Time
10
IC=5IB1=2IB2
VCC=300V
PW=40µs
300
200
100
1
℃
TJ=25
℃
TJ=125
℃
TJ=125
℃
TJ=25
0.1
0.01
0.1
1
0.4
0.6
0.8
1.0
1.2
1.4
Ic [A], COLLECTOR CURRENT
IFD [A], CURRENT
Figure 11. Diode Forward Voltage
Figure 12. Resistive Switching Time, t
on
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
Typical Characteristics (Continued)
850
800
750
700
650
600
550
IC=10IB1=2IB2
VCC=15V
VZ=300V
IC=5IB1=2IB2
VCC=300V
PW=40µs
2.0
LC=200µH
1.5
℃
TJ=125
℃
TJ=125
℃
TJ=25
℃
TJ=25
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.4
1.4
0.4
0.6
0.8
1.0
1.2
1.4
1.4
1.4
Ic [A], COLLECTOR CURRENT
Ic [A], COLLECTOR CURRENT
Figure 13. Resistive Switching Time, t
Figure 14. Inductive Switching Time, t
si
off
100
130
120
110
100
90
IC=10IB1=2IB2
IC=10IB1=2IB2
VCC=15V
VZ=300V
90
VCC=15V
VZ=300V
LC=200µH
LC=200µH
80
℃
TJ=125
℃
TJ=25
TJ=25℃
70
60
50
℃
TJ=125
80
70
60
0.4
0.6
0.8
1.0
1.2
0.4
0.6
0.8
1.0
1.2
Ic [A], COLLECTOR CURRENT
Ic [A], COLLECTOR CURRENT
Figure 15. Inductive Switching Time, t
Figure 16. Inductive Switching Time, t
fi
c
450
IC=5IB1=5IB2
VCC=15V
400
350
300
250
200
150
100
50
VZ=300V
LC=200µH
30
℃
TJ=125
℃
TJ=125
25
℃
TJ=25
IC=5IB1=5IB2
VCC=15V
℃
TJ=25
VZ=300V
LC=200µH
20
0.4
0.6
0.8
1.0
1.2
0.4
0.6
0.8
1.0
1.2
Ic [A], COLLECTOR CURRENT
Ic [A], COLLECTOR CURRENT
Figure 17. Inductive Switching Time, t
Figure 18. Inductive Switching Time, t
si
fi
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
Typical Characteristics (Continued)
450
1.6
1.4
1.2
1.0
0.8
0.6
IC=5IB1=5IB2
VCC=15V
VZ=300V
LC=200µH
400
350
300
250
200
150
100
50
℃
TJ=125
℃
℃
TJ=125
℃
TJ=25
TJ=25
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200µH
0.4
0.6
0.8
1.0
1.2
1.4
0.4
0.6
0.8
1.0
1.2
1.4
Ic [A], COLLECTOR CURRENT
Ic [A], COLLECTOR CURRENT
Figure 19. Inductive Switching Time, t
Figure 20. Inductive Switching Time, t
si
c
200
180
160
140
120
100
80
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200µH
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200µH
160
140
120
100
80
℃
℃
℃
TJ=125
TJ=25
TJ=25
℃
TJ=125
60
60
40
0.4
0.6
0.8
1.0
1.2
1.4
0.4
0.6
0.8
1.0
1.2
1.4
Ic [A], COLLECTOR CURRENT
Ic [A], COLLECTOR CURRENT
Figure 21. Inductive Switching Time, t
Figure 22. Inductive Switching Time, t
c
fi
10
40
1µs
10µs
50µs
30
20
10
0
5ms
1ms
1
DC
0.1
0.01
10
100
1000
0
25
50
75
100
125
150
℃
TC[ ], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 23. Forward Bias Safe Operating Area
Figure 24. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
Package Dimensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
Package Dimensions (Continued)
D-PAK
6.60 ±0.20
5.34 ±0.30
2.30 ±0.10
0.50 ±0.10
(0.50)
(4.34)
(0.50)
MAX0.96
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
2.30TYP
2.30TYP
[2.30±0.20]
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.76 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
QT Optoelectronics™ TinyLogic™
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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