KSD1273PTU [FAIRCHILD]
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN;
| 型号： | KSD1273PTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN 晶体 放大器 晶体管 功率双极晶体管 功率放大器 局域网 |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSD1273
High h , AF Power Amplifier
FE
•
”Full PAK” Package for Simplified Mounting Only by a Screw, Requires
no Insulator.
TO-220F
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
80
V
V
CBO
CEO
EBO
60
6
V
I
I
I
3
A
C
6
A
CP
B
1
A
P
Collector Dissipation (T =25°C)
2
40
W
W
°C
°C
C
a
P
Collector Dissipation (T =25°C)
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector-Emitter Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Test Condition
Min.
Typ.
Max.
Units
V
BV
I
= 25mA, I = 0
60
CEO
CBO
C
B
I
V
V
V
V
= 80V, I = 0
100
100
100
2500
1
µA
µA
µA
CB
CE
EB
CE
E
I
= 60V, I = 0
B
CEO
I
= 6V, I = 0
C
EBO
h
DC Current Gain
= 4V, I = 0.5A
500
FE
C
V
(sat)
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
I
= 2A, I = 0.05A
V
CE
C
B
f
V
= 12V, I = 0.2A
30
MHz
T
CE
C
h
Classification
FE
Classification
Q
P
O
h
500 ~ 1000
800 ~ 1500
1200 ~ 2500
FE
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10000
1000
100
VCE = 4V
IB = 1.2mA
IB = 1mA
IB = 800uA
IB = 600uA
IB = 400uA
IB = 200uA
10
0.01
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10000
1000
100
10
10000
1000
100
IC = 50 IB
VCE = 4V
125oC
75oC
25oC
25O
75O
C
C
125O
C
1
0.01
10
0.01
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
Ic[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
10
IC = 50 IB
IC = 40 IB
25o
75o
125oC
C
C
VBE(sat)
VBE(sat)
1000
100
10
1
0.1
VCE(sat)
0.01
0.01
0.01
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Base Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics (Continued)
1000
1000
100
10
f = 1MHz
100
10
1
1
0.01
1
10
100
1000
0.1
1
10
VCB[V], COLLECTO-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 7. Collector Output Capacitance
Figure 8. Current Gain Bandwidth Product
50
10
(1): TC=Ta
(2): With a 100x100x2mm
AL Heat Sink
ICmax(pulse)
45
( 1)
(3): Without Heat Sink
(PC=2W)
40
35
30
25
20
15
10
5
IC(max)
1
( 2)
( 3)
0.1
0
1
10
100
0
25
50
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
TA[oC], TEMPERATURE
Figure 9. Safe Operating Area
Figure 10. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-220F
2.54 ±0.20
10.16 ±0.20
(7.00)
ø3.18 ±0.10
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
(30
°
)
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
相关型号：
KSD1273Q
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD
KSD1273QTU
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN
FAIRCHILD
KSD1273QYDTU
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN
FAIRCHILD
KSD135
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
KSD135-10
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
KSD135-16
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
KSD135-6
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
KSD1362
Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
SAMSUNG
KSD1362-R
Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
SAMSUNG
KSD1362N
Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD
KSD1362O
Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明