KSE5741 [FAIRCHILD]
High Voltage Power Switching In Inductive Circuits; 高压功率开关在电感电路型号: | KSE5741 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | High Voltage Power Switching In Inductive Circuits |
文件: | 总5页 (文件大小:50K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KSE5740/5741/5742
High Voltage Power Switching In Inductive
Circuits
•
•
•
•
•
•
High Voltage Power Darlington TR
Small Engine lgnition
Switching Regulators
Inverters
Solenold and Relay Drivers
Motor Control
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Silicon Darlington Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
BV (sus)
Collector-Emitter Sustaining Voltage
: KSE5740
CEO
300
350
400
V
V
V
: KSE5741
: KSE5742
V
Collector-Emitter Voltage : KSE5740
: KSE5741
600
700
800
V
V
V
CEV
: KSE5742
V
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
8
V
A
EBO
I
8
C
I
I
I
16
A
CP
B
2.5
A
*Base Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
5
80
A
BP
P
W
°C
°C
C
J
T
T
150
- 65 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
V
(sus)
Collector-Emitter Sustaining Voltage
: KSE5740
CEO
I
= 50mA, I =0
300
350
400
V
V
V
C
B
: KSE5741
: KSE5742
I
I
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V
V
=Rate Value, V =1.5V
BE(OFF)
1
mA
mA
CEV
EBO
CEV
= 8V, I = 0
75
EB
C
h
V
V
=5V, I = 0.5A
50
200
100
400
FE
CE
CE
C
=5V, I = 4A
C
V
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
I
=4A, I = 0.2A
2
3
V
V
CE
BE
F
C
C
B
=8A, I = 0.4A
B
I
I
=4A, I = 0.2A
2.5
3.5
V
V
C
C
B
=8A, I = 0.4A
B
Diode Forward Voltage
Delay Time
I =5A
2.5
V
F
t
t
t
t
t
t
V
= 250V, I (pk) = 6A
0.04
0.5
8
µs
µs
µs
µs
µs
µs
D
CC
C
I
= I = 0.25A
Rise Time
B1
B2
R
t = 25µs
P
Storage Time
S
Duty Cycle≤1%
Fall Time
2
F
Voltage Storage Time
I (pk) = 6A, V (pk) = 250V
4
SV
C
CE
I 1= 0.06A, V (off) = 5V
Cross-over Time
B
BE
2
C
* PW=5ms, Duty Cycle=10%
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
10
1000
IC = 20 IB
VCE = 5V
VBE(sat)
1
VCE(sat)
100
0.1
10
0.1
0.01
0.1
1
10
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
10
VCC = 250V
IC = 20IB
IB1 = IB2
V
= 250V
ICC=C 20IB
IB1 = IB2
tSTG
tR
1
tD
1
tF
0.1
0.01
0.1
0.1
0.1
1
10
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Turn On Time
Figure 4. Turn Off Time
100
20
16
12
8
VBE(off)= -5V
10
1
0.1
0.01
4
E5740
E5741
E5742
E5740
E5741
E5742
0
0
100
200
300
400
500
1
10
100
1000
VCE[V],COLLECTOR EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Reverse Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics (Continued)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 1. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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