KSH3055TM [FAIRCHILD]
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3;型号: | KSH3055TM |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 晶体 放大器 晶体管 功率双极晶体管 |
文件: | 总5页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KSH3055
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
•
•
•
•
•
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ -I “ Suffix)
Electrically Similar to Popular KSE3055T
DC Current Gain Specified to 10A
D-PAK
I-PAK
1
1
1.Base 2.Collector 3.Emitter
High Current Gain - Bandwidth Product:
f = 2MHz (MIN), I = 500mA
T
C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
70
V
V
CBO
CEO
EBO
60
5
10
V
I
I
A
C
Base Current
6
A
B
P
Collector Dissipation (T =25°C)
20
W
W
°C
°C
C
C
Collector Dissipation (T =25°C)
1.75
150
a
T
T
Junction Temperature
Storage Temperature
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Test Condition
Min.
Max.
Units
V
V
(sus)
I
= 30mA, I = 0
60
CEO
CEO
CBO
EBO
C
B
I
I
I
V
V
V
= 30V, I = 0
50
2
µA
CE
CB
EB
E
= 70V, I = 0
mA
mA
E
= 5V, I = 0
0.5
100
C
h
*DC Current Gain
V
V
= 4V, I = 4A
20
5
FE
CE
CE
C
= 4V, I = 10A
C
V
V
(sat)
* Collector-Emitter Saturation Voltage
I
I
= 4A, I = 0.4A
1.1
8
V
V
CE
BE
C
C
B
= 10A, I = 3.3A
B
(on)
* Base-Emitter On Voltage
V
V
= 4V, I = 4A
1.8
V
CE
CE
C
f
Current Gain Bandwidth Product
= 10V, I = 500mA
2
MHz
T
C
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
Typical Characteristics
10
1000
100
10
VCE = 2V
IC = 10 IB
VBE(sat)
1
VCE(sat)
0.1
0.01
0.1
1
0.01
1
10
100
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
10
VCC = 30V
IC = 10.IB
IB1 = IB2
V
= 30V
ICC=C 10.IB
1
1
tSTG
tR
0.1
tf
0.1
tD, VBE(off)=5V
0.01
0.01
0.01
0.01
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Turn On Time
Figure 4. Turn Off Time
100
10
25
20
15
10
5
ICP(max)
IC(max)
1
0.1
0.01
0
0
25
50
75
100
125
150
175
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[oC], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
Package Dimensions
D-PAK
6.60 ±0.20
5.34 ±0.30
2.30 ±0.10
0.50 ±0.10
(0.50)
(4.34)
(0.50)
MAX0.96
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
2.30TYP
2.30TYP
[2.30±0.20]
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.76 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
Package Dimensions(Continued)
I-PAK
2.30 ±0.20
0.50 ±0.10
6.60 ±0.20
5.34 ±0.20
(0.50)
(4.34)
(0.50)
MAX0.96
0.76 ±0.10
0.50 ±0.10
2.30TYP
2.30TYP
[2.30±0.20]
[2.30±0.20]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
QT Optoelectronics™ TinyLogic™
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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