KSK211G [FAIRCHILD]
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN;
| 型号： | KSK211G |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSK211
FM Tuner VHF Amplifier
•
•
NF =2.5dB (TYP)
=9.0 mS (TYP)
3
Y
FS
2
SOT-23
1
1. Drain 2. Gate 3. Source
Silicon N-channel Junction Fet
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
-18
Units
V
Gate-Drain Voltage
Gate-Current
V
GDO
I
10
mA
mW
°C
G
P
Power Dissipation
Junction Temperature
Storage Temperature
200
D
T
T
150
J
-55 ~ 125
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
Gate Cut-off Current
V
= 0.5V, V = 0
-10
nA
V
GSS
GS
DS
V(BR)
Gate-Drain Breakdown Voltage
Drain Current
I = -100µA, Drain
-18
1.0
0.4
GDO
G
I
V
V
V
=10V, V =0
10
mA
V
DSS
DS
DS
DS
GS
V
(off)
Gate-Source Cut-off Voltage
Forward Transfer Admittance
=10V, I =1µA
4.0
GS
D
Y
=10V, V =0,
9
mS
FS
GS
f=1KHz
C
Reverse Transfer Capacitance
Power Gain
V
V
V
=10V, f=1MHz
0.15
3.5
pF
dB
dB
RSS
PS
GD
DD
DD
C
=10V, f=100MHz
=10V, f=100MHz
18
NF
Noise Figure
2.5
I
Classification
DSS
Classification
O
Y
G
I
(mA)
1.0 ~ 3.0
2.5 ~ 6.0
5.0 ~ 10
DSS
Marking
L2X
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
8
7
6
5
4
3
2
1
0
VGS = 0V
5
VGS = 0V
VGS = -0.2V
VGS = -0.4V
4
3
VGS = -0.2V
2
VGS = -0.8V
VGS = -0.4V
VGS = -0.6V
VGS = -0.6V
VGS = -0.8V
VGS = -1.0V
VGS = -1.2V
1
0
VGS = -0.8V
VGS = -1.0V
VGS = -1.2V
-1.2
0
5
10
15
20
25
-0.8
-0.4
0
1
2
3
4
5
VGS[V], DRAIN-SOURCE
VOLTAGE
VDS[V], DRAIN-SOURCE
VOLTAGE
VDS[V], DRAIN-SOURCE VOLTAGE
Figure 1. Static Characteristic
Figure 2. I -V
D DS
100
10
100
10
f = 100MHz
f = 1MHz
℃
Ta = 25
℃
Ta = 25
IDS = 5mA (IDSS
)
)
gfs
IDS = 2mA
IDS = 0.5mA
-bfs
IDS = 5mA (IDSS
1
1
IDS = 2mA
0.1
0.01
0.1
0.01
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
4
6
8
10
12
14
VDS[V], DRAIN-SOURCE VOLTAGE
VGD[V], GATE-DRAIN VOLTAGE
Figure 3. Crss-V
Figure 4. Yfs-V
DS
GD
10
8
20
16
12
8
VDS = 10V
VDS = 10V
f = 1kHz
℃
Ta = 25
Ta = 25℃
6
IDSS = 6mA
Ω
RS = 100
IDSS = 10mA
4
IDSS = 2mA
2
4
0
-2.0
0
0
2
4
6
8
10
-1.6
-1.2
-0.8
-0.4
0.0
ID[mA], DRAIN CURRENT
VGS[V], GATE-SOURCE VOLTAGE
Figure 5. I -V
Figure 6. Yfs-I
D
D
GS
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics (Continued)
100
1000
100
10
f = 100MHz
VDS = 0
℃
Ta = 25
f = 1MHz
℃
Ta = 25
10
1
IDS = 5mA (IDSS
IDS = 0.5mA
)
)
bis
gis
IDS = 2mA
IDS = 2mA
IDS = 5mA (IDSS
IDS = 0.5mA
0.1
0.01
1
0.1
-0.0
4
6
8
10
12
14
16
18
20
22
24
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
VDS[V], DRAIN-SOURCE VOLTAGE
VGS[V], DRAIN-SOURCE VOLTAGE
Figure 7. Yis-V
Figure 8. Ciss-V
DS
GS
100
10
1
100
10
1
VDS=10V
VGS=0V
IDSS :VDS=10V
VGS=0V
Ta = 25℃
lYFSl:VDS=10V
VGS=0V
gfs
bfs
f=1kHz
Ta = 25℃
brs
grs
0.1
1
10
10
100
1000
10000
IDSS[mA], DRAIN CURRENT
f[MHz], FREQUENCY
Figure 9. Yfs -I
Figure 10. Yfs, Yrs-f
DSS
10
-
100
10
IDSS
:VDS= 10V
VGS=0
f = 100MHz
℃
Ta = 25
VGS(off):VDS=10V
ID = 0.1µA
gfs
Ta = 25℃
IDS = 5mA (IDSS
IDS = 0.5mA
)
)
IDS = 2mA
-1
1
gos
IDS = 5mA (IDSS
IDS = 0.5mA
0.1
0.01
IDS = 2mA
0.1
-
1
10
4
6
8
10
12
14
16
18
20
22
24
VDS[V], DRAIN-SOURCE VOLTAGE
IDSS[mA], DRAIN CURRENT
Figure 11. V (off)-I
Figure 12. Yos-V
DS
GS
DSS
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics (Continued)
250
200
150
100
50
100
VDS = 10V
VGS = 0
℃
Ta = 25
10
1
0.1
10
100
1000
10000
0
0
25
50
75
100
125
150
175
200
225
250
f[MHz], FREQUENCY
TC[oC], CASE TEMPERATURE
Figure 13. Yis, Yos-f
Figure 14. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
SOT-23
0.40 ±0.03
0.03~0.10
0.38 REF
+0.05
–0.023
0.40 ±0.03
0.12
0.96~1.14
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
Product Folder - Fairchild P/N KSK211 - N-Channel JFET
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●
NF =2.5dB (TYP)
| Y | =9.0 mS (TYP)
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Package type Leads
SOT-23
KSK211GMTF Full Production
KSK211OMTF Full Production
KSK211YMTF Full Production
$0.07
$0.07
$0.07
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TAPE REEL
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SOT-23
SOT-23
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© Copyright 2002 Fairchild Semiconductor
Product Folder - Fairchild P/N KSK211 - N-Channel JFET
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