MJD200 [FAIRCHILD]

D-PAK for Surface Mount Applications; D- PAK表面贴装应用
MJD200
型号: MJD200
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

D-PAK for Surface Mount Applications
D- PAK表面贴装应用

文件: 总5页 (文件大小:48K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MJD200  
D-PAK for Surface Mount Applications  
High DC Current Gain  
Built-in a Damper Diode at E-C  
Lead Formed for Surface Mount Applications (No Suffix)  
Straight Lead (I-PAK, “ - I “ Suffix)  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Base Current  
40  
CBO  
CEO  
EBO  
25  
V
8
V
I
I
I
1
5
A
B
Collector Current (DC)  
Collector Current (Pulse)  
A
C
10  
A
CP  
P
Collector Dissipation (T = 25°C)  
12.5  
1.4  
W
W
°C  
°C  
C
C
Collector Dissipation (T = 25°C)  
a
T
Junction Temperature  
Storage Temperature  
150  
J
T
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
* Collector Emitter Sustaining Voltage  
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
I =100mA, I =0  
25  
V
CBO  
CEO  
CBO  
EBO  
C
B
I
I
I
V
=40V, I =0  
100  
100  
nA  
nA  
CB  
E
V
V
=8V, I =0  
C
EBO  
=1V, I =500mA  
70  
CE  
C
h
* DC Current Gain  
V
V
=1V, I =2A  
45  
10  
180  
FE  
CE  
CE  
C
=2V, I =5A  
C
V
(sat)  
* Collector-Emitter Saturation Voltage  
I =500mA, I =50mA  
0.3  
0.75  
1.8  
V
V
V
CE  
C
B
I =2A, I =200mA  
C
B
I =5A, I =1A  
C
B
V
V
(sat)  
(on)  
* Base-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =5A, I =2A  
2.5  
1.6  
V
V
BE  
BE  
C
B
V
=1V, I =2A  
C
CE  
f
V
=10V, I =100mA  
65  
MHz  
pF  
T
CE  
C
C
V
=10V, I =0, f=0.1MHz  
80  
ob  
CB  
E
* Pulse Test: PW300µs, Duty Cycle2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  
Typical Characteristics  
1000  
100  
10  
10  
IC=10IB  
VBE(sat)  
1
VCE=2V  
VCE=1V  
0.1  
1
0.01  
0.01  
0.01  
0.1  
1
10  
0.1  
1
10  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
1000  
10  
VCC=30V  
IC=10IB  
100  
10  
1
1
tR  
0.1  
tD  
0.01  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
VCB[V], COLLECTOR BASE VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 3. Collector Output Capacitance  
Figure 4. Turn On Time  
1000  
100  
VCC=30V  
IC=10IB  
IB1=IB2  
tSTG  
10  
1
tF  
100  
0.1  
10  
0.01  
0.01  
0.1  
0.1  
1
10  
1
10  
100  
IC[A], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Turn Off Time  
Figure 6. Safe Operating Area  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  
Typical Characteristics (Continued)  
20.0  
17.5  
15.0  
12.5  
10.0  
7.5  
5.0  
2.5  
0.0  
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
Figure 7. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  
Package Demensions  
D-PAK  
6.60 ±0.20  
5.34 ±0.30  
2.30 ±0.10  
0.50 ±0.10  
(0.50)  
(4.34)  
(0.50)  
MAX0.96  
0.76 ±0.10  
0.50 ±0.10  
1.02 ±0.20  
2.30 ±0.20  
2.30TYP  
2.30TYP  
[2.30±0.20]  
[2.30±0.20]  
6.60 ±0.20  
(5.34)  
(5.04)  
(1.50)  
(2XR0.25)  
0.76 ±0.10  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  

相关型号:

MJD200-1

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS
MOTOROLA

MJD200-I

暂无描述
FAIRCHILD

MJD200G

Complementary Plastic Power Transistors
ONSEMI

MJD200I

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
FAIRCHILD

MJD200RL

Complementary Plastic Power Transistors
ONSEMI

MJD200RLG

Complementary Plastic Power Transistors
ONSEMI

MJD200T4

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS
MOTOROLA

MJD200T4

Complementary Plastic Power Transistors
ONSEMI

MJD200T4G

Complementary Plastic Power Transistors
ONSEMI

MJD200TF

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3
FAIRCHILD

MJD200_06

Complementary Plastic Power Transistors
ONSEMI

MJD200_11

Complementary Plastic Power Transistors
ONSEMI