MJD29C [FAIRCHILD]

General Purpose Amplifier Low Speed Switching Applications; 通用放大器低速切换应用程序
MJD29C
元器件型号: MJD29C
生产厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述和应用:

General Purpose Amplifier Low Speed Switching Applications
通用放大器低速切换应用程序

放大器
PDF文件: 总4页 (文件大小:47K)
下载文档:  下载PDF数据表文档文件
型号参数:MJD29C参数

MJD29CI

暂无描述

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0 FAIRCHILD

MJD29CITU

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3

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0 FAIRCHILD

MJD29CITU

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3

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0 FAIRCHILD

MJD29C-T1

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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0 SAMSUNG

MJD29C-T1

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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0 SAMSUNG

MJD29CTF

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

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0 FAIRCHILD

MJD29I

1 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251, IPAK-3

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0 FAIRCHILD

MJD29-I

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

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0 FAIRCHILD

MJD29-T1

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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0 SAMSUNG

MJD29TF

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

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0 FAIRCHILD

MJD-2V16W1P3

120V 17W Downlight

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15 SEOUL

MJD30-1

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

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1 SAMSUNG

MJD3055

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

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173 FAIRCHILD

MJD3055

COMPLEMENTARY SILICON POWER TRANSISTORS

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49 STMICROELECTR

MJD3055

Complementary Power Transistors

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103 ONSEMI