MJE13007F [FAIRCHILD]

High Voltage Switch Mode Application; 高压开关模式的应用
MJE13007F
型号: MJE13007F
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

High Voltage Switch Mode Application
高压开关模式的应用

晶体 开关 晶体管 功率双极晶体管 高压 局域网
文件: 总5页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MJE13007F  
High Voltage Switch Mode Application  
High Speed Switching  
Suitable for Switching Regulator and Motor Control  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector- Base Voltage  
Collector- Emitter Voltage  
Emitter- Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
700  
V
V
CBO  
CEO  
EBO  
400  
9
V
I
I
I
8
A
C
16  
A
CP  
B
4
40  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
BV  
I
= 10mA, I = 0  
400  
CEO  
EBO  
C
B
I
V
= 9V, I = 0  
1
mA  
EB  
C
h
DC Current Gain  
V
V
= 5V, I = 2A  
8
5
60  
30  
FE  
CE  
CE  
C
= 5V, I = 5A  
C
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
I
= 2A, I = 0.4A  
1
2
3
V
V
V
CE  
C
C
C
B
= 5A, I = 1A  
B
= 8A, I = 2A  
B
(sat)  
I
I
= 2A, I = 0.4A  
1.2  
1.6  
V
V
BE  
C
C
B
= 5A, I = 1A  
B
C
Output Capacitance  
Current Gain Bandwidth Product  
Turn On Time  
V
V
V
= 10V , f = 0.1MHz  
110  
pF  
MHz  
µs  
ob  
CB  
CE  
CC  
f
t
t
t
= 10V, I = 0.5A  
4
T
C
=125V, I = 5A  
1.6  
3
ON  
C
I
= - I = 1A  
Storage Time  
B1  
B2  
µs  
STG  
F
R = 50Ω  
L
Fall Time  
0.7  
µs  
* Pulse Test: PW300µs, Duty Cycle2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  
Typical Characteristics  
10  
100  
IC = 3 IB  
VCE = 5V  
1
VBE(sat)  
VCE(sat)  
10  
0.1  
0.01  
0.1  
1
0.1  
1
10  
100  
1
10  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
1000  
100  
10  
1000  
tR  
100  
10  
1
tD, VBE(off)=5V  
VCC=125V  
IC=5IB  
0.1  
1
10  
0.1  
1
10  
100  
1000  
VCB[V], COLLECTOR-BASE VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 3. Collector Output Capacitance  
Figure 4. Turn On Time  
100  
10  
10000  
VCC=125V  
IC=5IB  
tSTG  
1000  
100  
10  
1
0.1  
0.01  
tF  
1
10  
100  
1000  
0.1  
1
10  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 5. Turn Off Time  
Figure 6. Safe Operating Area  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  
Typical Characteristics (Continued)  
60  
50  
40  
30  
20  
10  
0
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
Figure 1. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  
Package Demensions  
TO-220F  
2.54 ±0.20  
10.16 ±0.20  
(7.00)  
ø3.18 ±0.10  
(0.70)  
(1.00x45°)  
MAX1.47  
0.80 ±0.10  
(30  
°
)
#1  
0.35 ±0.10  
+0.10  
–0.05  
0.50  
2.76 ±0.20  
2.54TYP  
2.54TYP  
[2.54 ±0.20  
]
[2.54 ±0.20]  
9.40 ±0.20  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
SyncFET™  
TinyLogic™  
VCX™  
ACEx™  
FASTr™  
GlobalOptoisolator™  
GTO™  
PowerTrench®  
QFET™  
QS™  
QT Optoelectronics™  
Quiet Series™  
LILENT SWITCHER®  
SMART START™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
UHC™  
HiSeC™  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
POP™  
E2CMOS™  
EnSigna™  
FACT™  
FACT Quiet Series™  
FAST®  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
INTERNATIONAL.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. G  

相关型号:

MJE13007F-BP

Power Bipolar Transistor, 8A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
MCC

MJE13007F-BP-HF

Power Bipolar Transistor,
MCC

MJE13007FTU

Transistor,
FAIRCHILD

MJE13007F_05

TO-220IS PACKAGE
KEC

MJE13007F_08

TRIPLE DIFFUSED NPN TRANSISTOR
KEC

MJE13007G

NPN Bipolar Power Transistor For Switching Power Supply Applications
ONSEMI

MJE13007G-M-TA3-T

NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
UTC

MJE13007G-P-TA3-T

NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING APPLICATIONS
UTC

MJE13007G-Q-TA3-T

NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING APPLICATIONS
UTC

MJE13007G-TA3-T

NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
UTC

MJE13007G-TF1-T

NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING
UTC