MJE13007F_08 [KEC]
TRIPLE DIFFUSED NPN TRANSISTOR; 三重扩散型NPN晶体管
| 型号： | MJE13007F_08 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | TRIPLE DIFFUSED NPN TRANSISTOR |
| 文件： | 总2页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
MJE13007F
TRIPLE DIFFUSED NPN TRANSISTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FEATURES
· Excellent Switching Times
: ton=1.6μS(Max.), tf=0.7μS(Max.), at IC=5A
· High Collector Voltage : VCBO=700V.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
700
400
9
V
V
DC
Pulse
8
Collector Current
Base Current
A
ICP
16
4
IB
A
Collector Power Dissipation
(Tc=25℃)
PC
40
W
Tj
Junction Temperature
150
℃
℃
Tstg
Storage Temperature Range
-55∼ 150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
IEBO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
mA
VEB=9V, IC=0
Emitter Cut-off Current
-
15
10
-
-
1
39
-
hFE(1) (Note)
hFE(2)
VCE=5V, IC=2A
VCE=5V, IC=5A
IC=2A, IB=0.4A
IC=5A, IB=1A
-
DC Current Gain
-
-
1
Collector-Emitter
Saturation Voltage
VCE(sat)
-
-
2
V
V
IC=8A, IB=2A
-
-
3
IC=2A, IB=0.4A
IC=5A, IB=1A
-
-
-
1.5
1.6
-
VBE(sat)
Base-Emitter Saturation Voltage
-
Cob
fT
VCB=10V, f=0.1MHz, IE=0
VCE=10V, IC=0.5A
Collector Output Capacitance
Transition Frequency
-
110
-
pF
4
-
MHz
OUTPUT
ton
tstg
tf
Turn-On Time
Storage Time
Fall Time
-
-
-
-
-
-
1.6
3
μS
μS
μS
300µS
I
I
B1
INPUT
B2
I
B1
B2
I
I
=I =1A
B2
B1
V
=125V
0.7
CC
<
DUTY CYCLE 2%
=
Note : hFE Classification R:15∼ 27, O:23∼ 39
2008. 3. 26
Revision No : 6
1/2
MJE13007F
2008. 3. 26
Revision No : 6
2/2
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MOTOROLA
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