MJE800STU [FAIRCHILD]

NPN Epitaxial Silicon Darlington Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL;
MJE800STU
型号: MJE800STU
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

NPN Epitaxial Silicon Darlington Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL

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文件: 总4页 (文件大小:50K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MJE800/801/802/803  
Monolithic Construction With Built-in Base-  
Emitter Resistors  
FE C  
Complement to MJE700/701/702/703  
High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC  
TO-126  
1
1. Emitter 2.Collector 3.Base  
NPN Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
Equivalent Circuit  
C
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector- Base Voltage  
: MJE800/801  
: MJE802/803  
60  
80  
V
V
CBO  
B
Collector-Emitter Voltage  
: MJE800/801  
: MJE802/803  
60  
80  
V
V
CEO  
V
Emitter-Base Voltage  
Collector Current  
Base Current  
5
V
A
EBO  
I
I
4
0.1  
C
R1  
R2  
A
B
P
Collector Dissipation (T =25°C)  
40  
W
E
R1 10 k  
R2 0.6 k Ω  
C
C
T
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
J
T
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
I = 50mA, I = 0  
C
Min.  
Max. Units  
BV  
Collector-Emitter Breakdown Voltage  
: MJE800/801  
CEO  
B
60  
80  
V
V
: MJE802/803  
I
I
I
Collector Cut-off Current  
: MJE800/801  
CEO  
V
V
= 60V, I = 0  
100  
100  
µA  
µA  
CE  
CE  
B
: MJE802/803  
= 80V, I = 0  
B
Collector Cut-off Current  
V
V
= Rated BV  
= Rated BV  
, I = 0  
100  
500  
µA  
µA  
CBO  
CB  
CEO  
CEO  
E
, I = 0  
CB  
E
T
= 100°C  
C
Emitter Cut-off Current  
V
= 5V, I = 0  
2
mA  
EBO  
BE  
C
h
DC Current Gain : MJE800/802  
: MJE801/803  
V
V
V
= 3V, I = 1.5A  
750  
750  
100  
FE  
CE  
CE  
CE  
C
= 3V, I = 2A  
C
: ALL DEVICES  
= 3V, I = 4A  
C
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
: MJE800/802  
CE  
I
I
I
= 1.5A, I = 30mA  
2.5  
2.8  
3
V
V
V
C
C
C
B
: MJE801/803  
: ALL DEVICES  
= 2A, I = 40mA  
B
= 4A, I = 40mA  
B
V
Base-Emitter ON Voltage  
: MJE800/802  
BE  
V
V
V
= 3V, I = 1.5A  
2.5  
2.5  
3
V
V
V
CE  
CE  
CE  
C
: MJE801/803  
: ALL DEVICES  
= 3V, I = 2A  
C
= 3V, I = 4A  
C
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  
Typical Characteristics  
5
10000  
1000  
100  
VCE = 3V  
4
3
2
1
0
IB= 450µA  
IB= 400µA  
IB= 350µA  
IB= 150µA  
IB= 100µA  
IB= 50µA  
10  
0.01  
0
1
2
3
4
5
0.1  
1
10  
VCE(V),COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
1000  
100  
10  
100  
10  
1
IC = 500 IB  
f=0.1MHZ  
IE=0  
VBE(sat)  
VCE(sat)  
1
0.01  
0.1  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
IC[A], COLLECTOR CURRENT  
VCB[V], COLLECTOR-BASE VOLTAGE  
Figure 3. Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Figure 4. Collector Output Capacitance  
60  
50  
40  
30  
20  
10  
0
100  
10  
1
MJE800/801  
MJE802/803  
0.1  
1
10  
100  
1000  
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Safe Operating Area  
Figure 6. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  
Package Demensions  
TO-126  
8.00 ±0.30  
3.25 ±0.20  
ø3.20 ±0.10  
(1.00)  
(0.50)  
0.75 ±0.10  
1.75 ±0.20  
1.60 ±0.10  
0.75 ±0.10  
#1  
+0.10  
–0.05  
0.50  
2.28TYP  
[2.28±0.20]  
2.28TYP  
[2.28±0.20]  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
SyncFET™  
TinyLogic™  
VCX™  
ACEx™  
FASTr™  
GlobalOptoisolator™  
GTO™  
PowerTrench®  
QFET™  
QS™  
QT Optoelectronics™  
Quiet Series™  
LILENT SWITCHER®  
SMART START™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
UHC™  
HiSeC™  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
POP™  
E2CMOS™  
EnSigna™  
FACT™  
FACT Quiet Series™  
FAST®  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
INTERNATIONAL.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. G  

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