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MJE800T [MOTOROLA]

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT; 4.0安培达林顿功率晶体管互补硅40瓦50瓦
MJE800T
型号： MJE800T
厂家： MOTOROLA    MOTOROLA
描述：

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
4.0安培达林顿功率晶体管互补硅40瓦50瓦

晶体 晶体管 功率双极晶体管
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by MJE700/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low–speed switching applications.  
•
•
•
High DC Current Gain —  
= 2000 (Typ) @ I = 2.0 Adc  
Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage  
Multiplication  
h
FE  
C
Choice of Packages —  
MJE700 and MJE800 series  
T0220AB, MJE700T and MJE800T  
MAXIMUM RATINGS  
4.0 AMPERE  
DARLINGTON  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
MJE702  
MJE703  
MJE802  
MJE803  
MJE700,T  
MJE800,T  
Rating  
Symbol  
Unit  
Collector–Emitter Voltage  
V
CEO  
60  
60  
80  
80  
Vdc  
40 WATT  
50 WATT  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CB  
Vdc  
Vdc  
Adc  
Adc  
V
EB  
5.0  
4.0  
0.1  
I
C
Base Current  
I
B
CASE 77  
TO–220  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
40  
0.32  
50  
0.40  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
stg  
–55 to +150  
C
J
CASE 77–08  
TO–225AA TYPE  
MJE700–703  
MJE800–803  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
C/W  
θJC  
CASE 77  
TO–220  
3.13  
2.50  
50  
40  
30  
20  
TO–220AB  
TO–126  
CASE 221A–06  
TO–220AB  
MJE700T  
10  
0
MJE800T  
25  
50  
75  
100  
125  
150  
T
, CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
REV 3  
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (1)  
(I = 50 mAdc, I = 0)  
MJE700,T, MJE800,T  
MJE702, MJE703, MJE802, MJE803  
V
60  
80  
—
—
Vdc  
(BR)CEO  
C
B
Collector Cutoff Current  
I
µAdc  
CEO  
CBO  
(V  
CE  
(V  
CE  
= 60 Vdc, I = 0)  
MJE700,T, MJE800,T  
MJE702, MJE703, MJE802, MJE803  
—
—
100  
100  
B
= 80 Vdc, I = 0)  
B
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= Rated BV  
= Rated BV  
, I = 0)  
I
—
—
100  
500  
µAdc  
CB  
CB  
CEO  
CEO  
E
, I = 0, T = 100 C)  
E
C
Emitter Cutoff Current (V  
ON CHARACTERISTICS  
DC Current Gain (1)  
= 5.0 Vdc, I = 0)  
I
EBO  
—
2.0  
mAdc  
BE  
C
h
FE  
—
(I = 1.5 Adc, V  
= 3.0 Vdc)  
= 3.0 Vdc)  
= 3.0 Vdc)  
MJE700,T, MJE702, MJE800,T, MJE802  
MJE703, MJE803  
750  
750  
100  
—
—
—
C
CE  
CE  
CE  
(I = 2.0 Adc, V  
C
(I = 4.0 Adc, V  
All devices  
C
Collector–Emitter Saturation Voltage (1)  
(I = 1.5 Adc, I = 30 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
MJE700,T, MJE702, MJE800,T, MJE802  
MJE703, MJE803  
—
—
—
2.5  
2.8  
3.0  
C
B
(I = 2.0 Adc, I = 40 mAdc)  
C
C
B
B
(I = 4.0 Adc, I = 40 mAdc)  
All devices  
Base–Emitter On Voltage (1)  
V
BE(on)  
(I = 1.5 Adc, V  
= 3.0 Vdc)  
= 3.0 Vdc)  
= 3.0 Vdc)  
MJE700,T, MJE702, MJE800,T, MJE802  
MJE703, MJE803  
—
—
—
2.5  
2.5  
3.0  
C
CE  
CE  
CE  
(I = 2.0 Adc, V  
C
(I = 4.0 Adc, V  
All devices  
C
DYNAMIC CHARACTERISTICS  
Small–Signal Current Gain (I = 1.5 Adc, V  
= 3.0 Vdc, f = 1.0 MHz)  
h
fe  
1.0  
—
—
C
CE  
(1) Pulse Test: Pulse Width  
300 µs, Duty Cycle  
2.0%.  
4.0  
V
V
= 30 V  
/I = 250  
I
T
= I  
= 25 C  
CC  
CC  
B1 B2  
J
R
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS  
C
B
– 30 V  
t
I
°
s
C B  
D , MUST BE FAST RECOVERY TYPE, e.g.:  
1
1N5825 USED ABOVE I  
≈
100 mA  
100 mA  
2.0  
B
R
C
MSD6100 USED BELOW I  
≈
SCOPE  
B
TUT  
t
V
f
R
2
B
APPROX  
+ 8.0 V  
1.0  
0.8  
≈
6.0 k  
≈
150  
51  
D
1
t
0
r
0.6  
V
1
APPROX  
–12 V  
0.4  
+ 4.0 V  
t
@ V  
= 0  
d
BE(off)  
2.0  
25 µs  
For t and t , D id disconnected  
d
r
1
B
PNP  
NPN  
and V = 0, R and R are varied  
2
C
t , t  
≤
10 ns  
r
f
to obtain desired test currents.  
0.2  
0.04  
DUTY CYCLE = 1.0%  
For NPN test circuit, reverse diode,  
polarities and input pulses.  
0.1  
0.2  
0.4 0.6  
1.0  
4.0  
0.06  
I
, COLLECTOR CURRENT (AMP)  
C
Figure 2. Switching Times Test Circuit  
Figure 3. Switching Times  
1.0  
0.7  
0.5  
D = 0.5  
0.3  
0.2  
0.2  
0.1  
0.1  
0.07  
0.05  
P
(pk)  
Z
R
= r(t) R  
θ
θ
θ
JC(t)  
JC  
JC  
°C/W MAX  
0.05  
0.02  
= 2.50  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
t
0.03  
0.02  
1
READ TIME AT t  
1
t
0.01  
2
T
– T = P  
Z
θ
J(pk)  
C
(pk)  
JC(t)  
20  
DUTY CYCLE, D = t /t  
1 2  
SINGLE PULSE  
0.01  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
50  
100  
200  
500  
1.0 k  
t, TIME (ms)  
Figure 4. Thermal Response (MJE700T, 800T Series)  
Motorola Bipolar Power Transistor Device Data  
2
1.0  
0.7  
D = 0.5  
0.2  
0.5  
0.3  
0.2  
P
(pk)  
0.1  
θ
θ
(t) = r(t) θ  
= 3.12  
JC  
JC  
JC  
°C/W MAX  
0.05  
0.1  
0.07  
0.05  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
0.01  
t
1
READ TIME AT t  
t
1
2
T
– T = P  
θ
(t)  
J(pk)  
C
(pk) JC  
DUTY CYCLE, D = t /t  
0.03  
0.02  
SINGLE PULSE  
1 2  
0.01  
0.01  
0.02 0.03 0.05  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
20  
30  
50  
100  
200 300 500  
1000  
t, TIME (ms)  
Figure 5. Thermal Response (MJE700, 800 Series)  
ACTIVE–REGION SAFE–OPERATING AREA  
10  
10  
7.0  
7.0  
5.0 ms  
1.0 ms  
100  
µs  
5.0 ms  
5.0  
5.0  
1.0 ms  
100 µs  
3.0  
2.0  
3.0  
2.0  
dc  
dc  
C
T
= 150  
°
C
T = 150°  
J
1.0  
0.7  
0.5  
J
1.0  
0.7  
0.5  
BONDING WIRE LIMITED  
THERMALLY LIMITED  
BONDING WIRE LIMITED  
THERMALLY LIMITED  
@ T = 25  
SECOND BREAKDOWN LIMITED  
°
C (SINGLE PULSE)  
@ T = 25°C (SINGLE PULSE)  
SECOND BREAKDOWN LIMITED  
C
C
0.3  
0.2  
0.3  
0.2  
MJE702, 703  
MJE700  
MJE802, 803  
MJE800  
0.1  
5.0  
0.1  
7.0  
10  
20  
30  
50  
70  
100  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
CE  
Figure 6. MJE700 Series  
Figure 7. MJE800 Series  
There are two limitations on the power handling ability of a  
transistor: average junction temperature and second break-  
The data of Figures 6 and 7 are based on T  
= 150 C;  
J(pk)  
is variable depending on conditions. Second breakdown  
T
C
down. Safe operating area curves indicate I – V  
limits of  
pulse limits are valid for duty cycles to 10% provided T  
C
CE  
J(pk)  
may be calculated from the data in Figure 4  
the transistor that must be observed for reliable operation;  
i.e., the transistor must not be subjected to greater dissipa-  
tion than the curves indicate.  
< 150 C. T  
J(pk)  
or 5. At high case temperatures, thermal limitations will re-  
duce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
10  
10  
100  
µs  
100 µs  
5.0  
2.0  
5.0  
2.0  
1.0 ms  
5.0 ms  
1.0 ms  
5.0 ms  
dc  
dc  
1.0  
0.5  
1.0  
0.5  
T
= 150  
°
C
T = 150°C  
J
BONDING WIRE LIMITED  
THERMALLY LIMITED  
J
BONDING WIRE LIMITED  
THERMALLY LIMITED  
@ T = 25  
SECOND BREAKDOWN LIMITED  
°
C (SINGLE PULSE)  
@ T = 25  
SECOND BREAKDOWN LIMITED  
°
C (SINGLE PULSE)  
C
C
0.2  
0.1  
0.2  
0.1  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
CE  
Figure 8. MJE700T  
Figure 9. MJE800T  
3
Motorola Bipolar Power Transistor Device Data  
PNP  
NPN  
MJE700, T Series  
MJE800, T Series  
6.0 k  
6.0 k  
V
= 3.0 V  
V
= 3.0 V  
CE  
T = 125  
°C  
CE  
T
= 125  
°
C
J
J
4.0 k  
3.0 k  
4.0 k  
3.0 k  
25°C  
2.0 k  
2.0 k  
25°C  
–55°C  
–55°C  
1.0 k  
800  
1.0 k  
800  
600  
600  
400  
300  
400  
300  
0.04 0.06  
0.1  
0.2  
0.4 0.6  
1.0  
2.0  
4.0  
0.04 0.06  
0.1  
0.2  
0.4 0.6  
1.0  
2.0  
4.0  
100  
4.0  
I
, COLLECTOR CURRENT (AMP)  
I
, COLLECTOR CURRENT (AMP)  
C
C
Figure 10. DC Current Gain  
3.4  
3.0  
2.6  
3.4  
T
= 25  
°
C
T = 25°C  
J
J
I
=
C
3.0  
0.5 A  
I
=
C
1.0 A  
2.0 A  
4.0 A  
1.0 A  
2.0 A  
4.0 A  
0.5 A  
2.6  
2.2  
1.8  
2.2  
1.8  
1.4  
1.4  
1.0  
0.6  
1.0  
0.6  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
0.1  
0.2  
0.5  
1.0  
I , BASE CURRENT (mA)  
B
2.0  
5.0  
10  
20  
50  
I
, BASE CURRENT (mA)  
B
Figure 11. Collector Saturation Region  
2.2  
1.8  
1.4  
2.2  
T
= 25°C  
T = 25°C  
J
J
1.8  
1.4  
V
@ I /I = 250  
C B  
V
@ I /I = 250  
BE(sat)  
BE(sat) C B  
V
@ V = 3.0 V  
CE  
BE  
V
@ V = 3.0 V  
CE  
BE  
1.0  
0.6  
0.2  
1.0  
0.6  
0.2  
V
@ I /I = 250  
C B  
V
@ I /I = 250  
CE(sat)  
CE(sat)  
C B  
0.04 0.06  
0.1  
0.2  
0.4 0.6  
1.0  
2.0  
4.0  
0.04 0.06  
0.1  
0.2  
0.4 0.6  
1.0  
2.0  
I
, COLLECTOR CURRENT (AMP)  
I , COLLECTOR CURRENT (AMP)  
C
C
Figure 12. “On” Voltages  
4
Motorola Bipolar Power Transistor Device Data  
PACKAGE DIMENSIONS  
–B–  
NOTES:  
F
C
U
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
Q
M
INCHES  
MILLIMETERS  
–A–  
DIM  
A
B
C
D
F
MIN  
MAX  
0.435  
0.305  
0.105  
0.026  
0.130  
MIN  
10.80  
7.50  
2.42  
0.51  
2.93  
MAX  
11.04  
7.74  
2.66  
0.66  
3.30  
1
2
3
0.425  
0.295  
0.095  
0.020  
0.115  
H
K
G
H
J
K
M
Q
R
S
0.094 BSC  
2.39 BSC  
0.050  
0.015  
0.575  
5
0.095  
0.025  
0.655  
1.27  
0.39  
14.61  
5
2.41  
0.63  
16.63  
TYP  
TYP  
J
V
G
0.148  
0.045  
0.025  
0.145  
0.040  
0.158  
0.055  
0.035  
0.155  
–––  
3.76  
1.15  
0.64  
3.69  
1.02  
4.01  
1.39  
0.88  
3.93  
–––  
R
M
M
M
0.25 (0.010)  
A
B
S
U
V
D 2 PL  
M
M
M
0.25 (0.010)  
A
B
STYLE 1:  
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
CASE 77–08  
TO–225AA TYPE  
ISSUE V  
5
Motorola Bipolar Power Transistor Device Data  
PACKAGE DIMENSIONS — CONTINUED  
NOTES:  
SEATING  
PLANE  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
–T–  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
C
B
F
T
S
4
INCHES  
MIN  
MILLIMETERS  
DIM  
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX  
0.620  
0.405  
0.190  
0.035  
0.147  
0.105  
0.155  
0.025  
0.562  
0.060  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
–––  
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.46  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
–––  
MAX  
15.75  
10.28  
4.82  
0.88  
3.73  
2.66  
3.93  
0.64  
14.27  
1.52  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
–––  
A
K
Q
Z
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.018  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
–––  
1
2
3
U
H
L
R
V
J
G
T
U
V
D
N
Z
0.080  
2.04  
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
CASE 221A–06  
TO–220AB  
ISSUE Y  
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,  
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
How to reach us:  
USA / EUROPE: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,  
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447  
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315  
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609  
INTERNET: http://Design–NET.com  
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
MJE700/D  
◊

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SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

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SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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