MJE800 [FAIRCHILD]

Monolithic Construction With Built-in Base- Emitter Resistors; 整体结构采用内置基地 - 发射极电阻


型号：	MJE800
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Monolithic Construction With Built-in Base- Emitter Resistors 整体结构采用内置基地 - 发射极电阻
文件：	总4页 (文件大小：54K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MJE800/801/802/803

Monolithic Construction With Built-in Base-

Emitter Resistors

FE C

Complement to MJE700/701/702/703

•

High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Equivalent Circuit

Symbol

Parameter

Value

Units

Collector- Base Voltage

: MJE800/801

: MJE802/803

CBO

Collector-Emitter Voltage

: MJE800/801

: MJE802/803

CEO

Emitter-Base Voltage

Collector Current

Base Current

EBO

0.1

Collector Dissipation (T =25°C)

R1 10 k Ω

R2 0.6 k Ω

Junction Temperature

Storage Temperature

150

°C

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

I = 50mA, I = 0

Min.

Max. Units

Collector-Emitter Breakdown Voltage

: MJE800/801

CEO

: MJE802/803

Collector Cut-off Current

: MJE800/801

CEO

= 60V, I = 0

100

µA

: MJE802/803

= 80V, I = 0

Collector Cut-off Current

= Rated BV

, I = 0

100

500

µA

CBO

CEO

, I = 0

= 100°C

Emitter Cut-off Current

= 5V, I = 0

EBO

DC Current Gain : MJE800/802

: MJE801/803

= 3V, I = 1.5A

750

100

= 3V, I = 2A

: ALL DEVICES

= 3V, I = 4A

(sat)

(on)

Collector-Emitter Saturation Voltage

: MJE800/802

= 1.5A, I = 30mA

2.5

2.8

: MJE801/803

: ALL DEVICES

= 2A, I = 40mA

= 4A, I = 40mA

Base-Emitter ON Voltage

: MJE800/802

= 3V, I = 1.5A

2.5

: MJE801/803

: ALL DEVICES

= 3V, I = 2A

= 3V, I = 4A

Rev. A1, February 2001

Typical Characteristics

10000

1000

100

V_CE= 3V

I_B= 450µA

I_B= 400µA

I_B= 350µA

I_B= 150µA

I_B= 100µA

I_B= 50µA

0.01

0.1

V_CE(V),COLLECTOR-EMITTER VOLTAGE

I_C[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

1000

100

I_C= 500 I_B

f=0.1MHZ

I_E=0

V_BE(sat)

V_CE(sat)

0.01

0.1

0.01

0.1

100

0.1

I_C[A], COLLECTOR CURRENT

V_CB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

100

MJE800/801

MJE802/803

0.1

100

1000

100

125

150

175

T_C[^oC], CASE TEMPERATURE

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area

Figure 6. Power Derating

Rev. A1, February 2001

Package Demensions

TO-126

8.00 ±0.30

3.25 ±0.20

ø3.20 ±0.10

(1.00)

(0.50)

0.75 ±0.10

1.75 ±0.20

1.60 ±0.10

0.75 ±0.10

+0.10

–0.05

0.50

2.28TYP

[2.28±0.20]

2.28TYP

[2.28±0.20]

Dimensions in Millimeters

Rev. A1, February 2001

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

SyncFET™

TinyLogic™

VCX™

ACEx™

FASTr™

GlobalOptoisolator™

GTO™

PowerTrench^®

QFET™

QS™

QT Optoelectronics™

Quiet Series™

LILENT SWITCHER^®

SMART START™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

UHC™

HiSeC™

ISOPLANAR™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

POP™

E²CMOS™

EnSigna™

FACT™

FACT Quiet Series™

FAST^®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. G

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