MMBT100_NL [FAIRCHILD]
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, SOT-23, 3 PIN;
| 型号： | MMBT100_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, SOT-23, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2008
PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
•
•
This device is designed for general purpose amplifier applications at collector currents to 300mA.
Sourced from process 10.
C
E
SOT-23
TO-92
B
1
1. Emitter 2. Base 3. Collector
Mark: PN100/PN100A
Absolute Maximum Ratings*
T
= 25°C unless otherwise noted
a
Symbol
Parameter
Ratings
Units
45
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
75
6.0
- Continuous
500
TJ, Tstg
Junction and Storage Temperature
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Thermal Characteristics TA=25°C unless otherwise noted
Max.
Symbol
PD
Parameter
Units
PN100
PN100A
*MMBT100
*MMBT100A
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RθJC
RθJA
Thermal Resistance, Junction to Case
83.3
200
°C/W
°C/W
Thermal Resistance, Junction to Ambient
357
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
www.fairchildsemi.com
1
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
BVCBO
BVCEO
BVEBO
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emiitter Cutoff Current
Emitter Cutoff Current
IC = 10μA, IE = 0
75
45
V
V
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCB = 60V
6.0
V
50
50
50
nA
nA
nA
ICES
VCE = 40V
IEBO
VEB = 4V
On Characteristics
hFE
DC Current Gain
IC = 100μA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V*
100
100A
100
80
240
100
300
100
100
100
450
600
100A
I
C = 150mA, VCE = 5.0V *
100
100A
350
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
C = 200mA, IB = 20mA
IC = 10mA, IB = 1.0mA
C = 200mA, IB = 20mA
0.2
0.4
V
V
I
0.85
1.0
V
V
I
Small Signal Characteristics
fT
Current Gain Bandwidth Product
VCE = 20V, IC = 20mA
VCB = 5.0V, f = 1.0MHz
IC = 100μA, VCE = 5.0V
250
MHz
pF
Cobo
NF
Output Capacitance
Noise Figure
4.5
100
100A
5.0
4.0
dB
dB
R
G = 2.0kΩ, f = 1.0KHz
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
www.fairchildsemi.com
2
Typical Characteristics
vs Collector Current
Voltage vs Collector Current
400
0.4
0.3
0.2
0.1
Vce = 5V
125 °C
β = 10
300
25 °C
25 °C
200
- 40 °C
100
125 °C
- 40 °C
0
10
20 30
50
100
200 300 500
1
10
100
400
IC - COLLECTOR CURRENT (mA)
I C- COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Collector Current
Voltage vs Collector Current
1
1
- 40 °C
- 40 °C
0.8
0.8
0.6
0.4
0.2
25 °C
25 °C
= 5V
10
0.6
0.4
0.2
125 °C
125 °C
V
CE
β = 10
1
100
500
0.1
1
10
100
300
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
100
10
f = 1.0 MHz
VCB = 60V
10
1
Cib
1
Cob
0.1
0.1
25
50
75
100
125
150
0.1
1
10
100
TA - AMBIENT TEMPERATURE ( C)
°
V
ce
- COLLECTOR VOLTAGE (V)
Figure 6. Input and Output Capacitance
vs Reverse Voltag
Figure 5. Collector Cutoff Current
vs Ambient Temperature
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
www.fairchildsemi.com
3
Typical Characteristics (Continued)
300
700
600
500
400
300
200
100
0
270
240
210
180
150
120
90
t
s
TO-92
IB1 = IB2 = Ic / 10
SOT-23
V
= 10 V
cc
t
f
t
r
60
30
t
d
0
10
20
30
50
100
200 300
0
25
50
75
100
125
150
TEMPERATURE (oC)
IC - COLLECTOR CURRENT (mA)
Figure 8. Power Dissipation vs
Ambient Temperature
Figure 7. Switching Times vs
Collector Current
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
www.fairchildsemi.com
4
Package Dimension (TO92)
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
www.fairchildsemi.com
5
Package Dimension (SOT23)
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
www.fairchildsemi.com
6
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HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
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PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
www.fairchildsemi.com
7
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