MMBT200 [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器
| 型号： | MMBT200 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP General Purpose Amplifier |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
PN200
MMBT200
PN200A
MMBT200A
C
E
TO-92
C
SOT-23
Mark: N2 / N2A
B
B
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
45
75
V
V
6.0
V
Collector Current - Continuous
500
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN200A
*MMBT200A
PD
Total Device Dissipation
Derate above 25 C
625
5.0
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Case
83.3
Rθ
C/W
°
JC
Thermal Resistance, Junction to Ambient
200
357
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
BVCBO
BVCEO
BVEBO
ICBO
Collector-Base Breakdown Voltage
60
45
V
V
V
I = 10 A, I = 0
µ
C
B
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IE = 0
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
6.0
I = 10 A, I = 0
µ
E
C
VCB = 50 V, IE = 0
VCE = 40 V, IE = 10
VEB = 4.0 V, IC = 0
50
50
50
nA
nA
nA
ICES
IEBO
ON CHARACTERISTICS
hFE
DC Current Gain
80
I = 100 A, VCE = 1.0 V
µ
200
C
240
100
300
100
100
100
200A
200
200A
200A
200
450
600
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V*
IC = 150 mA, VCE = 5.0 V*
350
200A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
0.2
0.4
0.85
1.0
V
V
V
V
VCE(sat)
VBE(sat)
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
VCE = 20 V, IC = 20 mA
VCB = 10 V, f = 1.0 MHz
250
MHz
pF
Output Capacitance
6.0
Cobo
NF
Noise Figure
5.0
4.0
dB
dB
I = 100 A, VCE = 5.0 V,
µ
200
200A
C
R = 2.0 k , f = 1.0 kHz
Ω
G
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
500
0.3
0.25
0.2
VCE = 5V
125 °C
β
= 10
400
300
200
100
0
0.15
0.1
25 °C
25 °C
- 40 °C
0.05
125 ºC
- 40 ºC
0
0.1
1
10
100
300
0.01
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1.2
1
0.8
0.6
0.4
0.2
0
β
= 10
1
0.8
0.6
0.4
0.2
0
- 40 ºC
25 °C
- 40 ºC
25 °C
125 ºC
125 ºC
V
= 5V
CE
0.1
1
10
100
300
0.1
1
10
100 200
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
100
10
V
= 50V
CB
95
90
85
80
75
70
1
0.1
0.01
25
50
75
100
125
0.1
1
10
100
1000
TA- AMBIENT TEMPERATURE (ºC)
RESISTANCE (kΩ)
Input and Output Capacitance
vs Reverse Voltage
Collector Saturation Region
4
3
2
1
0
100
Ta = 25°C
f = 1.0 MHz
Ic =
10
100 uA
300 mA
50 mA
Cib
Cob
100
300
700
2000 4000
0.1
1
10
100
I
- BASE CURRENT (uA)
V
- COLLECTOR VOLTAGE(V)
B
ce
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Switching Times vs
Collector Current
Gain Bandwidth Product
vs Collector Current
300
270
240
210
180
150
120
90
40
t
V
= 5V
s
ce
30
20
10
0
IB1 = IB2 = Ic / 10
V
= 10 V
cc
t
f
t
r
60
30
t
d
0
10
20
30
50
100
200 300
1
10
20
50
100 150
IC - COLLECTOR CURRENT (mA)
IC- COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
700
600
500
TO-92
SOT-23
400
300
200
100
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
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