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MMBT5401 [FAIRCHILD]

PNP General Purpose Amplifier; PNP通用放大器
MMBT5401
型号： MMBT5401
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

PNP General Purpose Amplifier
PNP通用放大器

放大器 光电二极管
文件： 总4页 (文件大小：112K)
中文：  中文翻译
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Discrete POWER & Signal  
Technologies  
2N5401  
MMBT5401  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 2L  
E
PNP General Purpose Amplifier  
This device is designed as a general purpose amplifier and switch  
for applications requiring high voltages. Sourced from Process 74.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
150  
160  
5.0  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
200  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5401  
*MMBT5401  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  
PNP General Purpose Amplifier  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0  
150  
160  
5.0  
V
V
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IC = 100 µA, IE = 0  
IE = 10 µA, IC = 0  
VCB = 120 V, IE = 0  
50  
50  
50  
nA  
µA  
nA  
VCB = 120 V, IE = 0, TA = 100°C  
VEB = 3.0 V, IC = 0  
IEBO  
Emitter Cutoff Current  
ON CHARACTERISTICS*  
hFE  
DC Current Gain  
IC = 1.0 mA, VCE = 5.0 V  
IC = 10 mA, VCE = 5.0 V  
IC = 50 mA, VCE = 5.0 V  
IC = 10 mA, IB = 1.0 mA  
IC = 50 mA, IB = 5.0 mA  
IC = 10 mA, IB = 1.0 mA  
IC = 50 mA, IB = 5.0 mA  
50  
60  
50  
240  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
0.2  
0.5  
1.0  
1.0  
V
V
V
V
VCE(sat)  
VBE(sat)  
SMALL SIGNAL CHARACTERISTICS  
fT  
Current Gain - Bandwidth Product  
IC = 10 mA, VCE = 10 V,  
f = 100 MHz  
VCB = 10 V, IE = 0,  
f = 1.0 MHz  
IC = 250 µA, VCE = 5.0 V,  
RS = 1.0 kΩ,  
100  
300  
6.0  
8.0  
MHz  
pF  
Output Capacitance  
Cobo  
NF  
Noise Figure  
dB  
f = 10 Hz to 15.7 kHz  
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%  
Spice Model  
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2  
Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p  
Itf=0 Vtf=0 Xtf=0 Rb=10)  
PNP General Purpose Amplifier  
(continued)  
Typical Characteristics  
Collector-Emitter Saturation  
Voltage vs Collector Current  
Typical Pulsed Current Gain  
vs Collector Current  
0.4  
0.3  
0.2  
0.1  
0
200  
β
= 10  
VCE = 5V  
150  
125 °C  
25 °C  
100  
25 °C  
125 ºC  
- 40 ºC  
50  
- 40 ºC  
0
0.0001  
0.001  
0.01  
0.1  
1
0.1  
1
10  
100  
I C - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (A)  
Base-Emitter ON Voltage vs  
Collector Current  
Base-Emitter Saturation  
Voltage vs Collector Current  
1
0.8  
0.6  
0.4  
0.2  
1
0.8  
0.6  
0.4  
0.2  
- 40 ºC  
- 40 ºC  
25 °C  
25 °C  
125 ºC  
125 ºC  
VCE = 5V  
β
= 10  
0.1  
1
10  
100  
0.1  
1
10  
100  
I C - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Collector-Cutoff Current  
vs Ambient Temperature  
Collector-Emitter Breakdown  
Voltage with Resistance  
Between Emitter-Base  
100  
10  
1
220  
V
= 100V  
CB  
210  
200  
190  
180  
170  
0.1  
25  
50  
75  
100  
125  
150  
0.1  
1
10  
100  
1000  
º
TA - AMBIENT TEMPERATURE ( C)  
RESISTANCE (k  
)
Ω
PNP General Purpose Amplifier  
(continued)  
Typical Characteristics (continued)  
Power Dissipation vs  
Ambient Temperature  
Input and Output Capacitance  
vs Reverse Voltage  
700  
600  
500  
400  
300  
200  
100  
0
80  
f = 1.0 MHz  
60  
40  
TO-92  
SOT-23  
C
eb  
20  
C
cb  
0
0.1  
1
10  
100  
0
25  
50  
75  
100  
125  
150  
TEMPERATURE (oC)  
V
- REVERSE BIAS VOLTAGE(V)  
R

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