MMBT5401-D87Z [ONSEMI]
PNP 通用放大器;
| 型号： | MMBT5401-D87Z |
| 厂家： | 
ONSEMI |
| 描述： | PNP 通用放大器 放大器 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：442K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MMBT5401
PNP Epitaxial Silicon Transistor
Features
• PNP General-Purpose Amplifier
C
• This device is designed as a general-purpose amplifier
and switch for applications requiring high voltage.
E
B
SOT-23
Ordering Information
Part Number
MMBT5401
Marking
Package
SOT-23 3L
SOT-23 3L
Packing Method
2L
2L
Tape and Reel, 3000 pcs, 7 inch Reel
Tape and Reel, 10000 pcs, 13 inch Reel
MMBT5401-D87Z
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
-150
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
-160
V
-5.0
V
Collector Current - Continuous
-600
mA
°C
TJ, TSTG Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
-55 to +150
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
© 2004 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
MMBT5401/D
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
350
2.8
Unit
mW
Total Device Dissipation
Derate Above 25°C
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
357
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCEO
BVCBO
BVEBO
Parameter
Conditions
Min.
-150
-160
-5.0
Max.
Unit
V
Collector-Emitter Breakdown Voltage(4) IC = -1.0 mA, IB = 0
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
IC = -100 μA, IE = 0
IE = -10 μA, IC = 0
VCB = -120 V, IE = 0
V
V
-50
-50
-50
nA
ICBO
IEBO
Collector Cut-Off Current
Emitter Cut-Off Current
VCB = -120 V, IE = 0,
TA = 100°C
μA
VEB = -3.0 V, IC = 0
nA
IC = -0.1 mA, VCE = -5.0 V
IC = -10 mA, VCE = -5.0 V
IC = -50 mA, VCE = -5.0 V
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
50
60
50
hFE
DC Current Gain(4)
240
-0.2
-0.5
-1.0
-1.0
V
CE(sat) Collector-Emitter Saturation Voltage(4)
BE(sat) Base-Emitter Saturation Voltage(4)
V
V
V
IC = -10 mA, VCE = -10 V,
f = 100 MHz
fT
Current Gain Bandwidth Product
Output Capacitance
100
300
6.0
MHz
pF
VCB = -10 V, IE = 0,
f = 1 MHz
Cob
IC = -250 μA, VCE = -5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
NF
Noise Figure
8.0
dB
Note:
4. Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2%
www.onsemi.com
2
Typical Performance Characteristics
0.4
0.3
0.2
0.1
0.0
200
β = 10
VCE = 5V
150
125 o
C
25 o
C
100
50
0
25 o
C
125 o
C
- 40 o
C
- 40 o
C
0.1
1
10
100
1E-4
1E-3
0.01
0.1
1
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (A)
Figure 1. Typical Pulsed Current Gain
vs. Collector Current
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
1.0
0.8
0.6
0.4
0.2
1.0
- 40 o
C
- 40 o
C
0.8
0.6
0.4
0.2
25 o
C
25 o
C
125 o
C
125 o
C
VCE = 5V
β = 10
0.1
1
10
100
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base-Emitter On Voltage vs.
Collector Current
Between Emitter-Base
220
100
V
= 100V
CB
210
200
190
180
170
10
1
0.1
0.1
1
10
100
1000
25
50
75
100
125
°
150
Ω
RESISTANCE (k )
T A - AM BIENT TE MPE RATU RE ( C)
Figure 6. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
Figure 5. Collector-Cutoff Current
vs. Ambient Temperature
www.onsemi.com
3
Typical Performance Characteristics (Continued)
700
600
500
400
300
200
100
0
80
f = 1.0 MHz
60
40
SOT-23
C
eb
20
0
C
cb
0.1
1
10
100
0
25
50
75
100
125
150
V
- REVERSE BIAS VOLTAGE(V)
R
TEMPERATURE (oC)
Figure 7. Input and Output Capacitance
vs. Reverse Voltage
Figure 8. Power Dissipation vs.
Ambient Temperature
www.onsemi.com
4
Physical Dimensions
0.95
2.92 0.20
3
1.40
+0.20
-0.15
1.30
2.20
1.00
1
2
0.60
0.37
(0.29)
0.95
1.90
0.20
A B
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
(0.93)
0.10
0.00
0.10
C
C
2.40 0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
0.23
0.08
0.25
0.20 MIN
E) DRAWING FILE NAME: MA03DREV10
SEATING
PLANE
(0.55)
SCALE: 2X
Figure 9. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
MMBT5401-T1
Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
MMBT5401D87Z
TRANSISTOR 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SO-3, BIP General Purpose Small Signal
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明