MMBTH24S62Z [FAIRCHILD]
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN;
| 型号： | MMBTH24S62Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN 放大器 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
MPSH24
MMBTH24
C
E
TO-92
C
B
B
SOT-23
Mark: 3A
E
NPN RF Transistor
This device is designed for common-emitter low noise
amplifier and mixer applications with collector currents
in the 100 µA to 20 mA range to 300 MHz, and low
frequency drift common-base VHF oscillator applications
with high output levels for driving FET mixers. Sourced
from Process 47. See MPSH11 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
30
40
4.0
50
V
V
V
Collector Current - Continuous
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSH24
*MMBTH24
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
225
1.8
mW
mW/°C
°C/W
Rθ
JC
Thermal Resistance, Junction to Ambient
200
556
Rθ
°C/W
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NPN RF Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Sustaining Voltage*
IC = 1.0 mA, IB = 0
I = 100 A, I = 0
30
40
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
µ
C
E
IE = 10 µA, IC = 0
4.0
V
VCB = 15 V, IE = 0
50
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 8.0 mA, VCE = 10 V
30
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 8.0 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
400
MHz
pF
Collector-Base Capacitance
0.36
Ccb
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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