MMPQ3904L99Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, SOIC-16;
| 型号： | MMPQ3904L99Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, SOIC-16 |
| 文件： | 总7页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMB3904
FFB3904
MMPQ3904
E2
B4
C2
E4
B3
B2
E1
E3
C1
B2
E2
C1
B1
E1
C4
C4
C3
C2
B2
SC70-6
Mark: .1A
B1
E2
C3
C2
pin #1
E1
B1
pin #1
C2
C1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
C1
pin #1
SOIC-16
Mark: MMPQ3904
SuperSOT -6
Mark: .1A
Dot denotes pin #1
NPN Multi-Chip General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
40
60
V
V
4
6.0
V
Collector Current - Continuous
200
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FFB3904
FMB3904
MMPQ3904
PD
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
300
2.4
415
700
5.6
180
1,000
8.0
mW
mW/°C
°C/W
°C/W
°C/W
125
240
Each Die
1998 Fairchild Semiconductor Corporation
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0
40
60
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
I
C = 10 µA, IE = 0
6.0
V
IE = 10 µA, IC = 0
VCE = 30 V, VEB = 0
VCE = 30 V, VEB = 0
50
50
nA
nA
ICEX
Collector Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
40
30
70
50
100
75
60
30
MMPQ3904
C = 1.0 mA, VCE = 1.0 V
MMPQ3904
IC = 10 mA, VCE = 1.0 V
MMPQ3904
C = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
I
300
I
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.2
0.3
0.85
0.95
V
V
V
V
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.65
SMALL SIGNAL CHARACTERISTICS (MMPQ3904 only)
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 140 kHz
VEB = 0.5 V, IC = 0,
f = 140 kHz
250
4.0
8.0
MHz
pF
Output Capacitance
Cobo
Cibo
Input Capacitance
pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
500
400
300
200
100
0
V CE = 5V
0.15
β
= 10
125 °C
125 °C
0.1
25 °C
25 °C
0.05
- 40 °C
- 40 °C
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
V
= 5V
1
0.8
0.6
0.4
β = 10
CE
- 40 °C
- 40 °C
25 °C
25 °C
125 °C
125 °C
4
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Capacitance vs
Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
10
500
f = 1.0 MHz
VCB= 30V
100
10
1
5
4
C
ibo
3
2
C
0.1
obo
1
0.1
25
50
75
100
125
150
1
10
100
°
TA - AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
12
12
I
= 1.0 mA
C
R
V CE = 5.0V
I
= 1.0 mA
C
= 200Ω
S
10
8
10
8
I
= 50 µA
= 1.0 kΩ
I
= 5.0 mA
C
S
C
R
I
= 50 µA
C
I
= 0.5 mA
C
R
6
6
= 200Ω
S
I
= 100 µA
4
4
C
2
2
I
= 100 µA, R = 500 Ω
C
S
0
0
0.1
1
10
100
0.1
1
10
100
f - FREQUENCY (kHz)
R
S
- SOURCE RESISTANCE (
)
kΩ
Power Dissipation vs
Ambient Temperature
Current Gain and Phase Angle
vs Frequency
1
50
0
SOIC-16
45
40
35
30
25
20
15
10
5
20
40
60
80
100
120
h fe
SOT-6
0.75
0.5
0.25
0
θ
SC70-6
140
160
180
VCE = 40V
I C = 10 mA
0
1
10
100
1000
0
25
50
75
100
125
150
f - FREQUENCY (MHz)
TEMPERATURE ( C)
°
Turn-On Time vs Collector Current
Rise Time vs Collector Current
500
500
100
I
c
I
c
IB1= IB2
=
VCC = 40V
IB1= IB2=
10
10
40V
15V
100
T
= 25°C
J
t
@ VCC = 3.0V
r
T
= 125°C
J
2.0V
t
10
5
10
5
@ VCB = 0V
d
1
10
- COLLECTOR CURRENT (mA)
100
1
10
- COLLECTOR CURRENT (mA)
100
I
C
I
C
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
Fall Time vs Collector Current
500
500
I
I
c
c
IB1= IB2
=
IB1= IB2
=
10
10
T
= 25°C
J
T
= 125°C
VCC = 40V
J
100
100
T
= 125°C
J
T
= 25°C
J
10
5
10
5
1
10
100
1
10
- COLLECTOR CURRENT (mA)
100
I
- COLLECTOR CURRENT (mA)
I
C
C
Current Gain
Output Admittance
500
100
100
10
1
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
T
f = 1.0 kHz
T
= 25oC
= 25oC
A
A
4
10
0.1
1
10
0.1
1
10
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Input Impedance
Voltage Feedback Ratio
100
10
7
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
T
f = 1.0 kHz
T
= 25oC
= 25oC
A
A
5
4
10
1
3
2
0.1
1
0.1
1
10
0.1
1
10
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
NPN Multi-Chip General Purpose Amplifier
(continued)
Test Circuits
3.0 V
275 Ω
300 ns
10.6 V
Duty Cycle = 2%
10 KΩ
0
C1 < 4.0 pF
- 0.5 V
< 1.0 ns
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
3.0 V
t1
10
< t1 < 500 µs
10.9 V
275 Ω
Duty Cycle = 2%
10 KΩ
0
C1 < 4.0 pF
1N916
- 9.1 V
< 1.0 ns
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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