MOC213R2-M [FAIRCHILD]
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| 型号： | MOC213R2-M |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 暂无描述 晶体 光电 晶体管 输出元件 |
| 文件： | 总10页 (文件大小：3053K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2013
MOC211M, MOC212M, MOC213M
Small Ouline Optocouplers Transistor Output
Features
Description
■ UL Recognized (File #E90700, Volume 2)
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for high
density applications, and eliminate the need for through-
the-board mounting.
■ VDE Recognized (File #136616) (add option ‘V’ for
VDE approval, e.g., MOC211VM)
■ Convenient Plastic SOIC-8 Surface Mountable
Package Style
■ Standard SOIC-8 Footprint, with 0.050" Lead Spacing
■ High Input-Output Isolation of 2500 V
AC(rms)
Guaranteed
■ Minimum BV
of 30V Guaranteed
CEO
Applications
■ General Purpose Switching Circuits
■ Interfacing and Coupling Systems of Different
Potentials and Impedances
■ Regulation Feedback Circuits
■ Monitor and Detection Circuits
Schematic
Package Outline
ANODE
N/C
1
2
8
7
6
5
CATHODE
N/C
BASE
Figure 2. Package Outline
COLLECTOR
EMITTER
3
4
N/C
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. T = 25°C unless otherwise specified.
A
Symbol
Rating
Value
Unit
Emitter
I
Forward Current – Continuous
60
1.0
6.0
mA
A
F
I (pk)
Forward Current – Peak (PW = 100 µs, 120 pps)
Reverse Voltage
F
V
P
V
R
D
LED Power Dissipation @ T = 25°C
90
mW
A
Derate above 25°C
0.8
mW/°C
Detector
V
V
V
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
30
7.0
70
V
V
CEO
ECO
CBO
V
I
Collector Current-Continuous
150
mA
C
P
Detector Power Dissipation @ T = 25°C
150
mW
D
A
Derate above 25°C
1.76
mW/°C
Total Device
V
Input-Output Isolation Voltage
2500
Vac(rms)
ISO
(1)(2)(3)
(f = 60 Hz, t = 1 minute)
P
Total Device Power Dissipation @ T = 25°C
250
mW
D
A
Derate above 25°C
2.94
mW/°C
T
Ambient Operating Temperature Range
Storage Temperature Range
-40 to +100
-40 to +150
260
°C
°C
°C
A
T
stg
T
Lead Soldering Temperature
L
(1/16" from case, 10 second duration)
Notes:
1. Isolation Surge Voltage, V , is an internal device dielectric breakdown rating.
ISO
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
rating of 2500 V
for t = 1 minute is equivalent to a rating of 3,000 V
for t = 1 second.
ISO
AC(rms)
AC(rms)
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
2
Electrical Characteristics
T = 25°C unless otherwise specified.
A
Symbol
Parameter
Test Conditions
Min. Typ.* Max.
Unit
Emitter
V
Input Forward Voltage
Reverse Leakage Current
Input Capacitance
I = 10 mA
1.15
0.001
18
1.5
V
F
F
I
V
= 6.0 V
100
µA
pF
R
R
C
IN
Detector
I
I
Collector-Emitter Dark Current
V
V
= 10 V, T = 25°C
1.0
1.0
50
nA
µA
CEO1
CEO2
CE
CE
A
= 10 V, T = 100°C
A
BV
BV
C
Collector-Emitter Breakdown
Voltage
I
= 100 µA
C
30
100
V
CEO
ECO
CE
Emitter-Collector Breakdown
Voltage
I = 100 µA
7.0
10
V
E
Collector-Emitter Capacitance
f = 1.0 MHz, V = 0
7.0
pF
CE
Coupled
(4)
CTR
Collector-Output Current
I = 10 mA, V = 10 V
F CE
MOC211M
MOC212M
MOC213M
20
50
%
100
(1)(2)(3)
V
R
Isolation Surge Voltage
f = 60 Hz AC Peak, t = 1 minute
V = 500 V
2500
Vac(rms)
ISO
(2)
11
Isolation Resistance
10
Ω
V
ISO
V
Collector-Emitter Saturation Voltage I = 2.0 mA, I = 10 mA
0.4
CE (sat)
C
F
(2)
C
t
Isolation Capacitance
Turn-On Time
V = 0 V, f = 1 MHz
= 2.0 mA, V = 10 V, R = 100 Ω
0.2
7.5
pF
µs
ISO
I
on
C
CC
L
(Fig. 12)
t
Turn-Off Time
Rise Time
Fall Time
I
= 2.0 mA, V = 10 V, R = 100 Ω
5.7
3.2
4.7
µs
µs
µs
off
C
CC
L
(Fig. 12)
I = 2.0 mA, V = 10 V, R = 100 Ω
C
t
r
CC
L
(Fig. 12)
I = 2.0 mA, V = 10 V, R = 100 Ω
C
t
f
CC
L
(Fig. 12)
*Typical values at T = 25°C
A
Notes:
1. Isolation Surge Voltage, V , is an internal device dielectric breakdown rating.
ISO
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
rating of 2500 V
for t = 1 minute is equivalent to a rating of 3,000 V
for t = 1 second.
ISO
AC(rms)
AC(rms)
4. Current Transfer Ratio (CTR) = I / I x 100 %.
C
F
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
3
Typical Performance Curves
1.8
1.7
1.6
1.5
1.4
10
V
= 5 V
CE
NORMALIZED TO IF = 10 mA
1
T
T
= –55°C
= 25°C
A
1.3
1.2
1.1
1.0
A
0.1
T
= 100°C
A
1
10
100
IF – LED FORWARD CURRENT (mA)
0.01
Figure 3. LED Forward Voltage vs. Forward Current
0.1
1
10
100
IF – LED INPUT CURRENT (mA)
Figure 4. Output Curent vs. Input Current
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
IF = 10 mA
NORMALIZED TO VCE = 5 V
NORMALIZED TO TA = 25°C
0.1
-80
-60
-40
-20
0
20
40
60
80
100
120
0
1
2
3
4
5
6
7
8
9
10
VCE – COLLECTOR-EMITTER VOLTAGE (V)
TA – AMBIENT TEMPERATURE (°C)
Figure 6. Output Current vs. Collector-Emitter Voltage
Figure 5. Output Current vs. Ambient Temperature
10000
1000
100
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
VCE = 10 V
I
= 20 mA
F
I
= 10 mA
= 5 mA
F
I
F
1
V
= 5 V, T = 25°C
A
Normalized to:
CE
CTR at R = Open
BE
0.1
10
100
–BASE RESISTANCE (kΩ)
1000
0
20
40
60
80
100
R
BE
TA – AMBIENT TEMPERATURE (°C)
Figure 8. CTR vs. R
BE
(Unsaturated)
Figure 7. Dark Current vs. Ambient Temperature
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
4
Typical Performance Curves (Continued)
1.0
0.9
0.8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10 V
= 2 mA
CC
I
C
R
= 100 Ω
L
NORMALIZED TO:
I
= 20 mA
F
t
AT R = OPEN
on
BE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 10 mA
= 5 mA
F
I
F
V
= 0.3 V, T = 25°C
A
CE
Normalized to:
CTR at R = Open
BE
10
100
– BASE RESISTANCE (kΩ)
1000
0.01
0.1
1
10
100
R
BE
R
BE
– BASE RESISTANCE (MΩ)
Figure 10. Normalized t vs. R
on
BE
Figure 9. CTR vs. R
BE
(Saturated)
1.6
V
= 10 V
CC
I
= 2 mA
C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
R
= 100 Ω
L
NORMALIZED TO :
t
AT R = OPEN
off
BE
0.01
0.1
1
10
100
R
– BASE RESISTANCE (MΩ)
BE
Figure 11. Normalized t
vs. R
off
BE
TEST CIRCUIT
WAVEFORMS
VCC = 10 V
INPUT PULSE
IC
IF
RL
10%
INPUT
OUTPUT
OUTPUT PULSE
90%
RBE
tr
tf
toff
ton
IF to produce IC = 2 mA
Adjust
Figure 12. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
5
Package Dimensions
8-pin SOIC Surface Mount
8
0.164 (4.16)
0.144 (3.66)
1
0.202 (5.13)
0.182 (4.63)
0.010 (0.25)
0.006 (0.16)
0.143 (3.63)
0.123 (3.13)
0.021 (0.53)
0.011 (0.28)
0.244 (6.19)
0.224 (5.69)
0.008 (0.20)
0.003 (0.08)
0.050 (1.27) Typ.
Lead Coplanarity: 0.004 (0.10) MAX
Recommended Pad Layout
0.024 (0.61)
0.060 (1.52)
0.275 (6.99)
0.155 (3.94)
0.050 (1.27)
Dimensions in inches (mm).
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
6
Ordering Information
Option
V
Order Entry Identifier
Description
V
VDE 0884
R2
R2
Tape and Reel (2500 units per reel)
R2V
R2V
VDE 0884, Tape and Reel (2500 units per reel)
Marking Information
1
2
211
6
V
X YY S
5
3
4
Definitions
1
2
3
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
5
6
One digit year code, e.g., ‘8’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
7
Carrier Tape Specifications
8.0 0.10
2.0 0.05
3.50 0.20
0.30 MAX
Ø1.5 MIN
1.75 0.10
4.0 0.10
5.5 0.05
12.0 0.3
8.3 0.10
5.20 0.20
Ø1.5 0.1
0.1 MAX
User Direction of Feed
6.40 0.20
Dimensions in mm
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
8
Reflow Profile
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
T
P
260
240
220
200
180
160
140
120
100
80
t
P
T
L
Tsmax
t
L
Preheat Area
Tsmin
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
Profile Freature
Pb-Free Assembly Profile
150°C
Temperature Minimum (Tsmin)
Temperature Maximum (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60–120 seconds
3°C/second maximum
217°C
S
Ramp-up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60–150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp-down Rate (T to T )
6°C/second maximum
8 minutes maximum
P
L
Time 25°C to Peak Temperature
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
9
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
10
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