MOC8100SVM [FAIRCHILD]

Transistor Output Optocoupler, 1-Element, 7500V Isolation, SURFACE MOUNT, DIP-6;
MOC8100SVM
型号: MOC8100SVM
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Transistor Output Optocoupler, 1-Element, 7500V Isolation, SURFACE MOUNT, DIP-6

晶体 光电 晶体管 光电晶体管 输出元件
文件: 总11页 (文件大小:269K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
September 2009  
TIL111M, TIL117M, MOC8100M  
General Purpose 6-Pin Phototransistor Optocouplers  
Features  
General Description  
UL recognized (File # E90700)  
The MOC8100M, TIL111M and TIL117M optocouplers  
consist of a gallium arsenide infrared emitting diode  
driving a silicon phototransistor in a 6-pin dual in-line  
package.  
VDE recognized (File #102497 for white package)  
– Add option V (e.g., TIL111VM)  
Applications  
Power supply regulators  
Digital logic inputs  
Microprocessor inputs  
Appliance sensor systems  
Industrial controls  
Schematic  
Package Outlines  
ANODE 1  
6 BASE  
CATHODE 2  
5 COLLECTOR  
4 EMITTER  
NC 3  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.2  
www.fairchildsemi.com  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameter  
Device  
Value  
Units  
TOTAL DEVICE  
T
Storage Temperature  
All  
All  
All  
All  
-40 to +150  
-40 to +100  
260 for 10 sec  
250  
°C  
°C  
STG  
T
Operating Temperature  
Lead Solder Temperature  
OPR  
T
°C  
SOL  
P
Total Device Power Dissipation @ T = 25°C  
mW  
mW/°C  
D
A
Derate above 25°C  
2.94  
EMITTER  
I
DC/Average Forward Input Current  
Reverse Input Voltage  
All  
60  
3
mA  
V
F
V
TIL111M  
R
MOC8100M, TIL117M  
6
I (pk)  
Forward Current – Peak (300µs, 2% Duty Cycle)  
All  
All  
3
A
F
P
LED Power Dissipation @ T = 25 °C  
120  
1.41  
mW  
D
A
Derate above 25°C  
mW/°C  
DETECTOR  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Collector Voltage  
Emitter-Base Voltage  
All  
30  
70  
V
V
V
CEO  
CBO  
ECO  
EBO  
All  
TIL111M, TIL117M  
7
All  
All  
7
P
Detector Power Dissipation @ T = 25 °C  
150  
1.76  
mW  
D
A
Derate above 25°C  
mW/°C  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.2  
www.fairchildsemi.com  
2
Electrical Characteristics (T = 25°C unless otherwise specified.)  
A
Individual Component Characteristics  
Symbol  
EMITTER  
Parameter  
Test Conditions  
Device  
Min. Typ.* Max. Unit  
V
Input Forward Voltage  
I = 16mA  
T = 25°C  
TIL111M  
1.2  
1.2  
1.4  
1.4  
V
F
F
A
I = 10mA for  
T = 0°C–70°C  
MOC8100M,  
TIL117M  
F
A
MOC8100M,  
T = -55°C  
1.32  
1.10  
A
I = 16mA; for  
F
T = +100°C  
A
TIL117M  
I
Reverse Leakage Current V = 3.0V  
TIL111M, TIL117M  
MOC8100M  
0.001  
0.001  
10  
10  
µA  
µA  
R
R
V
= 6.0V  
R
DETECTOR  
BV  
BV  
BV  
BV  
Collector-Emitter  
Breakdown Voltage  
I
I
I
= 1.0mA, I = 0  
All  
30  
70  
7
100  
120  
10  
V
V
V
V
CEO  
CBO  
EBO  
ECO  
C
C
E
F
Collector-Base  
Breakdown Voltage  
= 10µA, I = 0  
All  
All  
F
Emitter-Base Breakdown  
Voltage  
= 10µA, I = 0  
F
Emitter-Collector  
I = 100µA, I = 0  
TIL111M, TIL117M  
7
10  
F
F
Breakdown Voltage  
I
Collector-Emitter Dark  
Current  
V
V
V
= 10V, I = 0  
TIL111M, TIL117M  
MOC8100M  
1
50  
25  
50  
nA  
nA  
µA  
CEO  
CE  
CE  
CE  
F
= 5V, T = 25°C  
0.5  
0.2  
A
= 30V, I = 0, T = 70°C  
TIL117M,  
F
A
MOC8100M  
I
I
Collector-Base Dark  
Current  
V
V
V
= 10V  
= 5V  
TIL111M, TIL117M  
MOC8100M  
All  
20  
10  
nA  
nA  
pF  
CBO  
CBO  
CB  
CB  
CE  
C
Capacitance  
= 0V, f = 1MHz  
8
CE  
*All Typical values at T = 25°C  
A
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.2  
www.fairchildsemi.com  
3
Electrical Characteristics (Continued) (T = 25°C unless otherwise specified.)  
A
Transfer Characteristics  
Symbol  
Parameter  
Test Conditions  
Device  
Min Typ* Max Unit  
DC CHARACTERISTICS  
CTR  
Current Transfer Ratio,  
Collector to Emitter  
I = 10mA, V = 10V  
TIL117M  
50  
50  
30  
%
%
CE  
F
CE  
I = 1mA, V = 5V  
MOC8100M  
F
CE  
I = 1mA, V = 5V,  
F
CE  
T = 0°C to +70°C  
A
I
On-State Collector Current I = 16mA, V = 0.4V  
(Phototransistor Operation)  
TIL111M  
2
7
mA  
µA  
V
C(ON)  
F
CE  
On-State Collector Current I = 16mA, V = 0.4V  
F
CB  
(Photodiode Operation)  
V
Collector-Emitter Saturation I = 500µA, I = 10mA  
TIL117M  
TIL111M  
0.4  
0.4  
0.5  
CE (SAT)  
C
F
Voltage  
I = 2mA, I = 16mA  
C
F
I = 100µA, I = 1mA  
MOC8100M  
C
F
AC CHARACTERISTICS  
T
Turn-On Time  
I = 2mA, V = 10V,  
MOC8100M  
TIL117M  
20  
10  
20  
10  
µs  
µs  
µs  
µs  
ON  
C
CC  
R = 100(Fig. 11)  
L
T
Turn-Off Time  
MOC8100M  
TIL117M  
OFF  
t
Rise Time  
Fall Time  
Rise Time  
MOC8100M  
TIL117M  
2
2
r
t
f
t
I
= 2mA, V = 10V,  
TIL111M  
10  
r
C(ON)  
CC  
(Phototransistor Operation) R = 100(Fig. 11)  
L
t
Fall Time  
f
(Phototransistor Operation)  
Isolation Characteristics  
Symbol Characteristic  
Test Conditions  
Min.  
Typ.*  
Max.  
Units  
V
R
C
Input-Output Isolation Voltage  
Isolation Resistance  
f = 60Hz, t = 1 sec.  
7500  
V
AC(rms)  
ISO  
ISO  
ISO  
11  
V
= 500 VDC  
10  
I-O  
Isolation Capacitance  
V
= 0, f = 1MHz  
0.2  
pF  
I-O  
*All Typical values at T = 25°C  
A
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.2  
www.fairchildsemi.com  
4
Safety and Insulation Ratings  
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.  
Compliance with the safety ratings shall be ensured by means of protective circuits.  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
Installation Classifications per DIN VDE 0110/1.89  
Table 1  
For Rated Main Voltage < 150Vrms  
For Rated Main voltage < 300Vrms  
Climatic Classification  
I-IV  
I-IV  
55/100/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
CTI  
175  
V
Input to Output Test Voltage, Method b,  
1594  
V
V
PR  
peak  
V
x 1.875 = V , 100% Production Test  
IORM  
PR  
with tm = 1 sec, Partial Discharge < 5pC  
Input to Output Test Voltage, Method a,  
1275  
peak  
V
x 1.5 = V , Type and Sample Test  
PR  
IORM  
with tm = 60 sec, Partial Discharge < 5pC  
Max. Working Insulation Voltage  
Highest Allowable Over Voltage  
External Creepage  
V
850  
6000  
7
V
V
IORM  
peak  
V
IOTM  
peak  
mm  
mm  
mm  
External Clearance  
7
Insulation Thickness  
0.5  
9
RIO  
Insulation Resistance at Ts, V = 500V  
10  
IO  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.2  
www.fairchildsemi.com  
5
Typical Performance Characteristics  
Fig. 1 LED Forward Voltage vs. Forward Current  
Fig. 2 Normalized CTR vs. Forward Current  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
T
= 5.0V  
Normalized to  
= 10mA  
CE  
= 25˚C  
1.7  
1.6  
1.5  
1.4  
I
A
F
T
= -55°C  
= 25°C  
= 100°C  
A
1.3  
1.2  
1.1  
1.0  
T
A
A
T
0
2
4
6
8
10  
12  
14  
16  
18  
20  
1
10  
100  
I
– FORWARD CURRENT (mA)  
F
I
– LED FORWARD CURRENT (mA)  
F
Fig. 3 Normalized CTR vs. Ambient Temperature  
1.4  
Fig. 4 CTR vs. RBE (Unsaturated)  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
I
F
= 20mA  
I
= 5mA  
F
I
= 10mA  
F
I
= 5mA  
F
I
I
= 10mA  
F
= 20mA  
F
V
= 5.0V  
CE  
Normalized to:  
I
T
= 10mA  
= 25˚C  
F
A
10  
100  
1000  
R
– BASE RESISTANCE (kΩ)  
BE  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
T
A
– AMBIENT TEMPERATURE (˚C)  
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current  
Fig. 5 CTR vs. RBE (Saturated)  
100  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
T
A
= 25˚C  
10  
1
V
= 0.3V  
CE  
I
= 20mA  
F
I
= 10mA  
= 5mA  
F
I
F
= 2.5mA  
0.1  
I
F
I
F
= 20mA  
0.01  
0.001  
I
F
= 5mA  
I
F
= 10mA  
10  
100  
1000  
R
BE  
– BASE RESISTANCE (kΩ)  
0.01  
0.1  
1
10  
I
C
- COLLECTOR CURRENT (mA)  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.2  
www.fairchildsemi.com  
6
Typical Performance Characteristics (Continued)  
Fig. 7 Switching Speed vs. Load Resistor  
1000  
Fig. 8 Normalized t vs. R  
on  
BE  
I
V
T
= 10mA  
F
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
= 10V  
CC  
= 25˚C  
A
V
I
R
10V  
= 2mA  
= 100Ω  
CC =  
C
L
100  
10  
1
T
f
T
off  
T
on  
T
r
10  
100  
1000  
10000  
100000  
0.1  
R
– BASE RESISTANCE (kΩ)  
BE  
0.1  
1
10  
100  
R – LOAD RESISTOR (kΩ)  
Fig. 10 Dark Current vs. Ambient Temperature  
Fig. 9 Normalized t vs. R  
off  
BE  
V
T
= 10V  
CE  
A
1.4  
= 25°  
C
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
1000  
100  
10  
1
V
10V  
CC =  
= 2mA  
0.1  
I
C
R
= 100Ω  
L
0.01  
0.001  
10  
100  
1000  
10000  
100000  
0
20  
40  
60  
80  
100  
R
BE  
– BASE RESISTANCE (kΩ)  
T
A
– AMBIENTTEMPERATURE (°C)  
TEST CIRCUIT  
WAVEFORMS  
V
CC = 10V  
INPUT PULSE  
IC  
IF  
RL  
10%  
90%  
INPUT  
OUTPUT  
OUTPUT PULSE  
RBE  
tr  
tf  
toff  
ton  
I
I
Adjust  
F
t
o
p
r
o
d
u
c
e
C
=
2
m
A
Figure 11. Switching Time Test Circuit and Waveforms  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.2  
www.fairchildsemi.com  
7
Package Dimensions  
Through Hole  
0.4" Lead Spacing  
8.13–8.89  
6
4
8.13–8.89  
6
4
6.10–6.60  
6.10–6.60  
Pin 1  
1
3
Pin 1  
1
3
5.08 (Max.)  
3.28–3.53  
0.25–0.36  
7.62 (Typ.)  
5.08 (Max.)  
3.28–3.53  
0.25–0.36  
0.38 (Min.)  
2.54–3.81  
2.54 (Bsc)  
0.38 (Min.)  
2.54–3.81  
2.54 (Bsc)  
0.20–0.30  
(0.86)  
15° (Typ.)  
(0.86)  
0.41–0.51  
0.76–1.14  
0.20–0.30  
10.16–10.80  
1.02–1.78  
0.41–0.51  
0.76–1.14  
1.02–1.78  
Surface Mount  
(1.78)  
8.13–8.89  
6
4
(1.52)  
(2.54)  
(7.49)  
6.10–6.60  
8.43–9.90  
(10.54)  
1
3
(0.76)  
Pin 1  
Rcommended Pad Layout  
0.25–0.36  
3.28–3.53  
5.08  
(Max.)  
0.20–0.30  
0.38 (Min.)  
0.16–0.88  
(8.13)  
2.54 (Bsc)  
(0.86)  
0.41–0.51  
0.76–1.14  
1.02–1.78  
Note:  
All dimensions in mm.  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.2  
www.fairchildsemi.com  
8
Ordering Information  
Order Entry Identifier  
(Example)  
Option  
Description  
No option  
TIL111M  
TIL111SM  
Standard Through Hole Device  
Surface Mount Lead Bend  
Surface Mount; Tape and Reel  
0.4" Lead Spacing  
S
SR2  
T
TIL111SR2M  
TIL111TM  
V
TIL111VM  
VDE 0884  
TV  
TIL111TVM  
TIL111SVM  
TIL111SR2VM  
VDE 0884, 0.4" Lead Spacing  
VDE 0884, Surface Mount  
VDE 0884, Surface Mount, Tape and Reel  
SV  
SR2V  
Marking Information  
1
2
TIL111  
X YY Q  
6
V
5
3
4
Definitions  
1
2
Fairchild logo  
Device number  
VDE mark (Note: Only appears on parts ordered with VDE  
option – See order entry table)  
3
4
5
6
One digit year code, e.g., ‘7’  
Two digit work week ranging from ‘01’ to ‘53’  
Assembly package code  
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are  
marked with date code ‘325’ or earlier are marked in portrait format.  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.2  
www.fairchildsemi.com  
9
Carrier Tape Specification  
12.0 ± 0.1  
2.0 ± 0.05  
4.5 ± 0.20  
Ø1.5 MIN  
1.75 ± 0.10  
0.30 ± 0.05  
4.0 ± 0.1  
11.5 ± 1.0  
24.0 ± 0.3  
9.1 ± 0.20  
21.0 ± 0.1  
Ø1.5 ± 0.1/-0  
10.1 ± 0.20  
0.1 MAX  
User Direction of Feed  
Reflow Profile  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
260°C  
>245°C = 42 Sec  
Time above  
183°C = 90 Sec  
°C  
1.822°C/Sec Ramp up rate  
60  
40  
33 Sec  
20  
0
0
60  
120  
180  
270  
360  
Time (s)  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.2  
www.fairchildsemi.com  
10  
TRADEMARKS  
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not  
intended to be an exhaustive list of all such trademarks.  
PowerTrench®  
PowerXS™  
The Power Franchise®  
Auto-SPM  
Build it Now™  
CorePLUS™  
CorePOWER™  
CROSSVOLT™  
CTL™  
Current Transfer Logic™  
EcoSPARK®  
EfficentMax™  
EZSWITCH™*  
™*  
F-PFS™  
FRFET®  
Global Power ResourceSM  
Green FPS™  
Green FPSe-Series™  
Gmax™  
GTO™  
IntelliMAX™  
ISOPLANAR™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
Programmable Active Droop™  
QFET®  
TinyBoost™  
TinyBuck™  
QS™  
Quiet Series™  
RapidConfigure™  
TinyLogic®  
TINYOPTO™  
TinyPower™  
TinyPWM™  
Saving our world, 1mW/W/kW at a time™  
SmartMax™  
TinyWire™  
TriFault Detect™  
TRUECURRENT*  
µSerDes™  
SMART START™  
SPM®  
®
MicroPak™  
MillerDrive™  
MotionMax™  
Motion-SPM™  
OPTOLOGIC®  
STEALTH™  
SuperFET™  
SuperSOT-3  
SuperSOT-6  
SuperSOT-8  
SupreMOS™  
SyncFET™  
Fairchild®  
Fairchild Semiconductor®  
FACT Quiet Series™  
FACT®  
UHC®  
Ultra FRFET™  
UniFET™  
VCX™  
VisualMax™  
XS™  
OPTOPLANAR®  
FAST®  
®
FastvCore™  
FETBench™  
PDP SPM™  
Power-SPM™  
Sync-Lock™  
FlashWriter®  
®
*
*
FPS™  
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.  
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full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.  
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide  
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our  
customers to do their part in stopping this practice by buying direct or from authorized distributors.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications may change in  
any manner without notice.  
Advance Information  
Preliminary  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  
Semiconductor reserves the right to make changes at any time without notice to improve design.  
First Production  
Full Production  
Not In Production  
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes  
at any time without notice to improve the design.  
No Identification Needed  
Obsolete  
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.  
The datasheet is for reference information only.  
Rev. I40  
©2005 Fairchild Semiconductor Corporation  
TIL111M, TIL117M, MOC8100M Rev. 1.0.2  
www.fairchildsemi.com  
11  

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