NDB408BE [FAIRCHILD]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | NDB408BE |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 1994
NDP408A / NDP408AE / NDP408B / NDP408BE
NDB408A / NDB408AE / NDB408B / NDB408BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
12 and 11A, 80V. RDS(ON) = 0.16 and 0.20W.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low RDS(ON)
.
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
NDP408A NDP408AE
NDB408A NDB408AE
NDP408B NDP408BE
NDB408B NDB408BE
Symbol Parameter
Units
V
VDSS
VDGR
VGSS
Drain-Source Voltage
80
80
V
Drain-Gate Voltage (RGS < 1 MW)
Gate-Source Voltage - Continuous
±20
±40
V
V
- Nonrepetitive (tP < 50 ms)
Drain Current - Continuous
- Pulsed
ID
12
36
11
33
A
A
PD
50
W
Total Power Dissipation @ TC = 25°C
Derate above 25°C
0.33
W/°C
°C
°C
TJ,TSTG Operating and Storage Temperature Range
-65 to 175
275
TL
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP408.SAM
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Type
Min Typ
Max Units
EAS
Single Pulse Drain-Source
Avalanche Energy
VDD = 25 V, ID = 12 A
NDP408AE
NDP408BE
NDB408AE
NDB408BE
40
12
mJ
A
IAR
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown
VGS = 0 V, ID = 250 µA
ALL
ALL
80
V
Voltage
IDSS
Zero Gate Voltage Drain
Current
VDS = 80 V,
VGS = 0 V
250
1
µA
mA
nA
TJ = 125°C
IGSSF
IGSSR
ON CHARACTERISTICS (Note 2)
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V
ALL
ALL
100
-100
Gate - Body Leakage, Reverse
nA
VGS = -20 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
ALL
2
2.9
2.3
4
V
V
VDS = VGS,
ID = 250 µA
TJ = 125°C
TJ = 125°C
TJ = 125°C
1.4
3.6
RDS(ON)
Static Drain-Source
On-Resistance
VGS = 10 V,
ID = 6 A
NDP408A
NDP408AE
NDB408A
NDB408AE
0.11
0.16
W
0.19
0.32
0.2
W
W
VGS = 10 V,
ID = 5.5 A
NDP408B
NDP408BE
NDB408B
NDB408BE
0.5
W
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
NDP408A
NDP408AE
NDB408A
NDB408AE
11
10
3
A
NDP408B
NDP408BE
NDB408B
NDB408BE
A
S
gFS
Forward Transconductance
VDS = 10 V, ID = 6 A
ALL
5.3
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
ALL
ALL
ALL
380
115
35
500
125
50
pF
pF
pF
C
iss
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
NDP408.SAM
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions
SWITCHING CHARACTERISTICS (Note 2)
Type
Min
Typ
Max Units
tD(ON)
Turn - On Delay Time
Turn - On Rise Time
VDD = 40 V, ID = 12 A,
VGS = 10 V, RGEN = 24 W
ALL
ALL
7.5
48
20
80
nS
nS
tr
tD(OFF)
Turn - Off Delay Time
Turn - Off Fall Time
ALL
ALL
22
32
40
60
nS
nS
tf
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 64 V,
ID = 12 A, VGS = 10V
ALL
ALL
ALL
12
2.5
6
17
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward VGS = 0 V,
NDP408A
NDP408AE
NDB408A
NDB408AE
12
11
36
33
A
A
A
A
NDP408B
NDP408BE
NDB408B
NDB408BE
ISM
NDP408A
NDP408AE
NDB408A
NDB408AE
NDP408B
NDP408BE
NDB408B
NDB408BE
VSD
(Note 2)
ALL
0.87
0.74
68
1.3
1.2
V
V
Voltage
IS = 6 A
TJ = 125°C
Reverse Recovery Time
Reverse Recovery Current
VGS = 0 V, IS = 12 A,
dIS/dt = 100 A/µs
ALL
ALL
100
ns
trr
Irr
4.7
7
A
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
ALL
ALL
3
°C/W
°C/W
RqJC
62.5
RqJA
Notes:
1. NDP408A/408B and NDB408A/408B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
NDP408.SAM
Typical Electrical Characteristics
30
2
1.8
1.6
1.4
1.2
1
VGS = 20V
12
VGS = 6V
10
25
8.0
7.0
20
8.0
7.0
15
10
12
6.0
20
10
5.0
5
0
0.8
0.6
0
2
4
6
8
0
5
10
15
20
25
30
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
2.5
2
2.5
2
V
= 10V
GS
ID = 6A
T
= 125°C
J
VGS = 10V
1.5
1
1.5
1
25°C
0.5
0
-55°C
0.5
-50
-25
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
T
, JUNCTION TEMPERATURE (°C)
I
, DRAIN CURRENT (A)
J
D
Figure 3. On-Resistance Variation
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
with Temperature.
1.2
10
8
25
T
= -55°C
VDS= V
VDS = 10V
GS
J
125
1.1
1
I D = 250µA
6
0.9
0.8
0.7
0.6
4
2
0
-50
-25
0
25
50
75
100
125
150
175
2
3
4
5
6
7
T
, JUNCTION TEMPERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
NDP408.SAM
Typical Electrical Characteristics (continued)
1.15
30
VGS = 0V
I D = 250µA
10
5
1.1
1.05
1
T
= 125°C
J
2
1
25°C
-55°C
0.5
0.1
0.95
0.9
-50
0.01
-25
0
25
50
75
100
125
150
175
0.4
0.6
0.8
1
1.2
1.4
T
, JUNCTION TEMPERATURE (°C)
J
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
1000
20
VDS = 12V
ID = 12A
C
C
iss
500
64
24
15
10
5
200
100
50
oss
C
rss
f = 1 MHz
VGS = 0V
10
0.1
0
0.2
0.5
1
2
5
10
20
50
0
5
10
15
20
25
V
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
DS
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
ton
toff
VDD
td(off)
r
t
tf
t d(on)
90%
90%
RL
VIN
D
VOUT
Output, V
Input, V
out
10%
90%
10%
VGS
Inverted
RGEN
DUT
G
50%
in
50%
10%
S
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP408.SAM
Typical Electrical Characteristics (continued)
8
T
= -55°C
J
L
VGS = 10V
+
tp
VDD
25°C
125°C
6
4
2
0
-
tp is adjusted to reach
the desired peak inductive
current, I L .
tp
BVDSS
I L
VDS = 10V
VDD
0
2
4
6
8
10
I
, DRAIN CURRENT (A)
D
Figure 13. Transconductance Variation
with Drain Current and Temperature.
Figure 14. Unclamped Inductive Load
Circuit and Waveforms.
50
20
10
5
V
GS = 20V
2
1
SINGLE PULSE
TC = 25°C
0.5
1
2
3
5
10
20
80
150
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 15. Maximum Safe Operating Area.
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t) * R
JC
q
JC
q
R
= 3.0 °C/W
JC
q
0.1
0.1
P(pk)
0.05
0.02
0.01
0.05
t1
t 2
0.03
0.02
T
- T = P * R
(t)
Single Pulse
0.02
J
C
q
JC
Duty Cycle, D = t1 /t2
0.01
0.01
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
t1 ,TIME (ms)
Figure 16. Transient Thermal Response Curve.
NDP408.SAM
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