NDB508BE [FAIRCHILD]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管


型号：	NDB508BE
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	N-Channel Enhancement Mode Field Effect Transistor N沟道增强型网络场效晶体管晶体晶体管功率场效应晶体管开关脉冲
文件：	总6页 (文件大小：76K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

May 1994

NDP508A / NDP508AE / NDP508B / NDP508BE

NDB508A / NDB508AE / NDB508B / NDB508BE

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These N-channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been especially

tailored to minimize on-state resistance, provide

superior switching performance, and withstand high

energy pulses in the avalanche and commutation

modes. These devices are particularly suited for low

voltage applications such as automotive, DC/DC

converters, PWM motor controls, and other battery

powered circuits where fast switching, low in-line

power loss, and resistance to transients are needed.

19 and 17A, 80V. R_DS(ON)= 0.08 and 0.10W.

Critical DC electrical parameters specified at

elevated temperature.

Rugged internal source-drain diode can eliminate

the need for an external Zener diode transient

suppressor.

175°C maximum junction temperature rating.

High density cell design (3 million/in²) for extremely

low R_DS(ON)

TO-220 and TO-263 (D²PAK) package for both

through hole and surface mount applications.

_____________________________________________________________________

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

NDP508A NDP508AE

NDB508A NDB508AE

NDP508B NDP508BE

NDB508B NDB508BE

Symbol Parameter

Units

V_DSS

V_DGR

V_GSS

Drain-Source Voltage

Drain-Gate Voltage (R_GS< 1 MW)

Gate-Source Voltage - Continuous

±20

±40

- Nonrepetitive (t_P< 50 ms)

Drain Current - Continuous

- Pulsed

I_D

P_D

Total Power Dissipation @ T_C= 25°C

Derate above 25°C

0.5

W/°C

°C

T_J,T_STGOperating and Storage Temperature Range

-65 to 175

275

T_L

Maximum lead temperature for soldering

purposes, 1/8" from case for 5 seconds

°C

NDP508.SAM

Electrical Characteristics (T_C= 25°C unless otherwise noted)

Symbol Parameter Conditions

DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

Type

Min Typ

Max Units

E_AS

Single Pulse Drain-Source

Avalanche Energy

V_DD= 25 V, I_D= 19 A

NDP508AE

NDP508BE

NDB508AE

NDB508BE

I_AR

Maximum Drain-Source Avalanche Current

OFF CHARACTERISTICS

BV_DSSDrain-Source Breakdown

V_GS= 0 V, I_D= 250 µA

ALL

Voltage

I_DSS

Zero Gate Voltage Drain

Current

V_DS= 80 V,

V_GS= 0 V

250

µA

T_J= 125°C

I_GSSF

I_GSSR

ON CHARACTERISTICS (Note 2)

Gate - Body Leakage, Forward V_GS= 20 V, V_DS= 0 V

ALL

100

-100

Gate - Body Leakage, Reverse

V_GS= -20 V, V_DS= 0 V

V_GS(th)

Gate Threshold Voltage

ALL

2.9

2.3

V_DS= V_GS,

I_D= 250 µA

1.4

3.6

R_DS(ON)

Static Drain-Source

On-Resistance

V_GS= 10 V,

I_D= 9.5 A

NDP508A

NDP508AE

NDB508A

0.057 0.08

0.097 0.16

0.1

T_J= 125°C NDB508AE

V_GS= 10 V,

I_D= 8.5 A

NDP508B

NDP508BE

NDB508B

T_J= 125°C NDB508BE

0.2

I_D(on)

On-State Drain Current

V_GS= 10 V, V_DS= 10 V

NDP508A

NDP508AE

NDB508A

NDB508AE

NDP508B

NDP508BE

NDB508B

NDB508BE

g_FS

Forward Transconductance

V_DS= 10 V, I_D= 9.5 A

ALL

9.6

DYNAMIC CHARACTERISTICS

Input Capacitance

V_DS= 25 V, V_GS= 0 V,

f = 1.0 MHz

ALL

750

200

900

250

iss

Output Capacitance

C_oss

C_rss

Reverse Transfer Capacitance

NDP508.SAM

Electrical Characteristics (T_C= 25°C unless otherwise noted)

Symbol Parameter Conditions

SWITCHING CHARACTERISTICS (Note 2)

Type

Min Typ

Max Units

t_D(ON)

Turn - On Delay Time

Turn - On Rise Time

V_DD= 40 V, I_D= 19 A,

V_GS= 10 V, R_GEN= 15 W

ALL

8.5

110

t_r

t_D(OFF)

Turn - Off Delay Time

Turn - Off Fall Time

ALL

t_f

Q_g

Q_gs

Q_gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DS= 64 V,

I_D= 19 A, V_GS= 10 V

ALL

23.5

4.5

11.8

DRAIN-SOURCE DIODE CHARACTERISTICS

I_S

Maximum Continuos Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward V_GS= 0 V,

NDP508A

NDP508AE

NDB508A

NDB508AE

NDP508B

NDP508BE

NDB508B

NDB508BE

I_SM

NDP508A

NDP508AE

NDB508A

NDB508AE

NDP508B

NDP508BE

NDB508B

NDB508BE

V_SD

(Note 2)

ALL

0.87

0.79

1.3

1.2

Voltage

I_S= 9.5 A

T_J= 125°C

Reverse Recovery Time

Reverse Recovery Current

V_GS= 0 V, I_S= 19 A,

dI_S/dt = 100 A/µs

ALL

110

t_rr

I_rr

5.2

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

ALL

°C/W

R_q_JC

62.5

R_q_JA

Notes:

1. NDP508A/508B and NDB508A/508B are not rated for operation in avalanche mode.

2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

NDP508.SAM

Typical Electrical Characteristics

1.8

1.6

1.4

1.2

V _GS= 20V

V_GS= 6V

8.0

7.0

8.0

7.0

6.0

5.0

0.8

0.6

, DRAIN-SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Gate Voltage and Drain Current.

2.5

I_D= 9.5A

= 10V

V_GS= 10V

= 125°C

1.5

25°C

-55°C

0.5

-50

0.5

-25

100

125

150

175

, JUNCTION TEMPERATURE (°C)

I_D, DRAIN CURRENT (A)

Figure 3. On-Resistance Variation

Figure 4. On-Resistance Variation with

Drain Current and Temperature.

with Temperature.

1.2

= -55°C

V_DS= V

V_DS= 10V

125

1.1

I _D= 250

0.9

0.8

0.7

0.6

-50

-25

100

125

150

175

, JUNCTION TEMPERATURE (°C)

, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Gate Threshold Variation

with Temperature.

NDP508.SAM

Typical Electrical Characteristics (continued)

1.15

I_D= 250µA

V_GS= 0V

1.1

1.05

= 125°C

25°C

-55°C

0.1

0.95

0.9

-50

0.01

-25

100

125

150

175

0.2

0.4

0.6

0.8

1.2

1.4

, JUNCTION TEMPERATURE (°C)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 7. Breakdown Voltage

Figure 8. Body Diode Forward Voltage

Variation with Current and

Temperature.

Variation with Temperature.

1600

1000

V _DS= 12V

I_D= 19A

iss

500

oss

200

100

f = 1 MHz

V_GS= 0V

rss

, GATE CHARGE (nC)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Capacitance Characteristics.

Figure 10. Gate Charge Characteristics.

t_on

t_off

V_DD

t_d(off)

t_f

t _d(on)

90%

R_L

V_IN

V_OUT

Output, V

Input, V

out

10%

90%

10%

V_GS

Inverted

R_GEN

DUT

50%

10%

Pulse Width

Figure 11. Switching Test Circuit.

Figure 12. Switching Waveforms.

NDP508.SAM

Typical Electrical Characteristics (continued)

= -55°C

V_GS= 10V

t_p

V_DD

25°C

125°C

t_pis adjusted to reach

the desired peak inductive

current, I _L.

t_p

BV_DSS

I _L

V_DS= 10V

V_DD

, DRAIN CURRENT (A)

Figure 13. Transconductance Variation

Figure 14. Unclamped Inductive Load

with Drain Current and Temperature.

Circuit and Waveforms.

100

V_GS= 20V

SINGLE PULSE

T_C= 25°C

0.5

100

, DRAIN-SOURCE VOLTAGE (V))

Figure 15. Maximum Safe Operating Area.

D = 0.5

0.5

0.3

0.2

(t) = r(t) * R

qJC

= 2.0 °C/W

qJC

0.1

P(pk)

0.05

0.02

0.01

t₁

t ₂

0.03

0.02

- T = P * R

(t)

Single Pulse

Duty Cycle, D = t₁/t₂

0.01

0.1

100

1000

t₁,TIME (m s)

Figure 16. Transient Thermal Response Curve.

NDP508.SAM

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