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NDB6030PL_NL [FAIRCHILD]

Power Field-Effect Transistor, 30A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,;
NDB6030PL_NL
型号： NDB6030PL_NL
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

Power Field-Effect Transistor, 30A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,

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July 1997  
NDP6030 / NDB6030  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V.  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild's proprietary, high cell  
density, DMOS technology. This very high density process has  
been especially tailored to minimize on-state resistance and  
provide superior switching performance. These devices are  
particularly suited for low voltage applications such as DC/DC  
converters and other battery powered circuits where fast  
switching, low in-line power loss, and resistance to transients  
are needed.  
Critical DC electrical parameters specified at elevated  
temperature.  
Rugged internal source-drain diode can eliminate the need  
for an external Zener diode transient suppressor.  
175°C maximum junction temperature rating.  
High density cell design for extremely low RDS(ON)  
.
TO-220 and TO-263 (D2PAK) package for both through hole  
and surface mount applications  
________________________________________________________________________________  
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted  
Symbol Parameter  
NDP6030  
NDB6030  
Units  
V
VDSS  
VDGR  
Drain-Source Voltage  
30  
30  
V
Drain-Gate Voltage (RGS < 1 MW)  
Gate-Source Voltage - Continuous  
Drain Current - Continuous  
- Pulsed  
±20  
46  
V
A
VGSS  
ID  
135  
75  
W
W/°C  
°C  
PD  
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
Operating and Storage Temperature Range  
0.5  
TJ,TSTG  
-65 to 175  
THERMAL CHARACTERISTICS  
RqJC  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
2
°C/W  
°C/W  
Rq JA  
62.5  
© 1997 Fairchild Semiconductor Corporation  
NDP6030.RevB  
Electrical Characteristics (TC = 25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
DRAIN-SOURCE AVALANCHE RATINGS (Note)  
WDSS  
IAR  
Single Pulse Drain-Source Avalanche Energy  
Maximum Drain-Source Avalanche Current  
VDD = 15 V, ID = 46 A  
100  
46  
mJ  
A
OFF CHARACTERISTICS  
BVDSS  
Drain-Source Breakdown Voltage  
VGS = 0 V, ID = 250 µA  
30  
V
ID = 250 µA, Referenced to 25 o C  
mV/oC  
Breakdown Voltage Temp. Coefficient  
Zero Gate Voltage Drain Current  
30  
DBVDSS/DTJ  
IDSS  
10  
1
µA  
mA  
nA  
nA  
VDS = 24 V, VGS = 0 V  
TJ = 125°C  
Gate - Body Leakage, Forward  
Gate - Body Leakage, Reverse  
100  
-100  
IGSSF  
IGSSR  
VGS = 20 V, VDS = 0 V  
VGS = -20 V, VDS = 0 V  
ON CHARACTERISTICS (Note)  
ID = 250 µA, Referenced to 25 o C  
mV/oC  
V
Gate Threshold VoltageTemp. Coefficient  
-6  
DVGS(th)/DTJ  
Gate Threshold Voltage  
2
2.3  
1.7  
4
VGS(th)  
VDS = VGS, ID = 250 µA  
TJ = 125°C  
1.4  
2.8  
Static Drain-Source On-Resistance  
0.014 0.018  
0.019 0.032  
RDS(ON)  
VGS = 10 V, ID = 23 A  
TJ = 125°C  
W
ID(on)  
gFS  
On-State Drain Current  
VGS = 10 V, VDS= 10 V  
VDS = 10 V, ID = 23 A  
60  
A
S
Forward Transconductance  
22  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
Ciss  
1165  
915  
pF  
pF  
pF  
VDS = 15 V, VGS = 0 V,  
f = 1.0 MHz  
Output Capacitance  
Coss  
Crss  
Reverse Transfer Capacitance  
385  
SWITCHING CHARACTERISTICS (Note)  
Turn - On Delay Time  
Turn - On Rise Time  
9
18  
nS  
nS  
tD(on)  
VDD = 30 V, ID = 46 A,  
VGS = 10 V, RGEN = 11 W  
103  
200  
tr  
Turn - Off Delay Time  
Turn - Off Fall Time  
40  
98  
80  
nS  
nS  
tD(off)  
200  
tf  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
34  
7
47  
nC  
nC  
nC  
Qg  
Qgs  
Qgd  
VDS =15 V,  
ID = 46 A, VGS = 10 V  
13  
DRAIN-SOURCE DIODE CHARACTERISTICS  
IS  
Maximum Continuos Drain-Source Diode Forward Current  
Maximum Pulsed Drain-Source Diode Forward Current  
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 23 A (Note)  
46  
135  
1.3  
A
A
V
ISM  
VSD  
0.9  
Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.  
NDP6030.RevB  
Typical Electrical Characteristics  
2
1.8  
1.6  
1.4  
1.2  
1
100  
V
= 20V  
12  
GS  
V
= 5.0V  
10  
GS  
8.0  
80  
60  
40  
20  
0
7.0  
6.0  
6.0  
7.0  
8.0  
10  
5.0  
12  
80  
20  
0.8  
0.6  
4.0  
0
20  
40  
60  
100  
0
1
2
3
4
5
I
, DRAIN CURRENT (A)  
D
V
, DRAIN-SOURCE VOLTAGE (V)  
DS  
Figure 1. On-Region Characteristics.  
Figure 2. On-Resistance Variation  
with Drain Current and Gate Voltage.  
0.08  
1.75  
ID = 23A  
I
= 23A  
D
V
= 10V  
GS  
1.5  
1.25  
1
0.06  
0.04  
0.02  
0
125°C  
25°C  
6
0.75  
0.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
4
5
7
8
9
10  
T , JUNCTION TEMPERATURE (°C)  
V
, GATE TO SOURCE VOLTAGE (V)  
J
GS  
Figure 4. On Resistance Variation with  
Gate-To- Source Voltage.  
Figure 3. On-Resistance Variation  
with Temperature.  
60  
50  
40  
30  
20  
10  
0
60  
V = 0V  
GS  
VDS = 10V  
T
= -55°C  
A
25°C  
10  
1
125°C  
T
= 125°C  
A
25°C  
0.1  
-55°C  
0.01  
0.001  
0.0001  
1
2
3
4
5
6
7
0
0.2  
0.4  
V , BODY DIODE FORWARD VOLTAGE (V)  
SD  
0.6  
0.8  
1
1.2  
1.4  
1.6  
V
, GATE TO SOURCE VOLTAGE (V)  
GS  
Figure 6. Body Diode Forward Voltage  
Variation with Source Current and  
Temperature.  
Figure 5. Transfer Characteristics.  
NDP6030.RevB  
Typical Electrical Characteristics (continued)  
4000  
2000  
1000  
500  
15  
VDS = 10V  
ID = 46A  
15V  
12  
9
20V  
C
iss  
C
oss  
6
C
rss  
f = 1 MHz  
V
= 0V  
GS  
3
200  
0.1  
0.3  
1
3
10  
30  
0
V
, DRAIN TO SOURCE VOLTAGE (V)  
DS  
0
10  
20  
30  
40  
50  
Q
, GATE CHARGE (nC)  
g
Figure 8.Capacitance Characteristics.  
Figure 7. Gate Charge Characteristics.  
1000  
300  
200  
100  
50  
SINGLE PULSE  
RqJC =2.0° C/W  
TA = 25°C  
800  
600  
400  
200  
0
20  
10  
5
VGS = 10V  
SINGLE PULSE  
2
1
o
RqJC = 2 C/W  
TC = 25 °C  
0.01  
0.1  
1
10  
100  
1,000  
0.5  
0.5  
1
3
5
10  
20  
30  
50  
SINGLE PULSE TIME (ms)  
V
, DRAIN-SOURCE VOLTAGE (V))  
DS  
Figure 9. Maximum Safe Operating Area.  
Figure 10. Single Pulse Maximum  
Power Dissipation.  
1
D = 0.5  
0.5  
0.3  
0.2  
0.2  
R
q
(t) = r(t) * R  
JC  
q
JC  
R
= 2.0 °C/W  
JC  
q
0.1  
0.1  
P(pk)  
0.05  
0.05  
0.02  
t
1
t
2
0.03  
0.01  
T - T = P * R  
(t)  
JC  
q
J
C
0.02  
Duty Cycle, D = t /t  
1
2
Single Pulse  
0.01  
0.01  
0.05  
0.1  
0.5  
1
5
10  
50  
100  
500  
1000  
t
,TIME (ms)  
1
Figure 11. Transient Thermal Response Curve.  
NDP6030.RevB  

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