NDH833N [FAIRCHILD]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | NDH833N |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总10页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 1997
NDH833N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
7.1 A, 20 V. RDS(ON) = 0.020 W @ VGS = 4.5 V
SuperSOTTM-8 N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
battery powered circuits or portable electronics where fast
switching, low in-line power loss, and resistance to transients
are needed.
RDS(ON) = 0.025 W @ VGS = 2.7 V.
Proprietary SuperSOTTM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
___________________________________________________________________________________________
5
6
7
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise note
Symbol
Parameter
NDH833N
Units
Drain-Source Voltage
20
V
V
A
VDSS
VGSS
ID
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
±8
7.1
(Note 1a)
24
Maximum Power Dissipation
(Note 1a)
(Note 1b)
1.8
W
PD
1
(Note 1c)
0.9
Operating and Storage Temperature Range
-55 to 150
°C
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
70
20
°C/W
°C/W
R
JA
q
R
JC
q
© 1997 Fairchild Semiconductor Corporation
NDH833N Rev. C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VDS = 16 V, VGS = 0 V
20
V
Zero Gate Voltage Drain Current
1
µA
µA
nA
nA
10
TJ= 55°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS= 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 4.5 V, ID = 7.1 A
0.4
0.3
0.62
0.4
1
V
0.8
TJ= 125°C
TJ= 125°C
RDS(ON)
Static Drain-Source On-Resistance
0.015
0.02
W
0.022 0.036
0.018 0.025
VGS = 2.7 V, ID = 6.7 A
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 7.1 A
On-State Drain Current
24
A
S
ID(on)
gFS
Forward Transconductance
35
DYNAMIC CHARACTERISTICS
Input Capacitance
1540
750
pF
pF
pF
Ciss
Coss
Crss
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
265
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
VDD = 5 V, ID = 1 A,
VGEN = 4.5 V, RGEN = 6 W
12
35
110
60
97
8
20
70
ns
ns
200
120
140
ns
ns
Qg
Qgs
Qgd
VDS = 10 V,
ID = 7.1 A, VGS = 10 V
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
33
NDH833N Rev. C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Min
Typ
Max
Units
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
1.5
1.2
A
V
IS
0.65
VSD
Notes:
VGS = 0 V, IS = 1.5 A (Note 2)
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
T - T
T - T
= I2 (t) ´ RDS(ON
J
A
J
A
( )
PD t =
=
(t)
)
T
J
D
R
R
+R (t)
qJ
A
q
q
CA
J
C
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 70oC/W when mounted on a 1 in2 pad of 2oz cpper.
b. 125oC/W when mounted on a 0.026 in2 pad of 2oz copper.
c. 135oC/W when mounted on a 0.005 in2 pad of 2oz copper.
1c
1a
1b
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDH833N Rev. C
Typical Electrical Characteristics
2
1.8
1.6
1.4
1.2
1
25
VGS =4.5V
2.5
3.5
2.0
2.7
20
15
10
5
VGS = 2.0V
1.5
2.5
2.7
3.0
3.5
4.5
0.8
0
5
10
15
20
25
0
0
0.5
V
1
1.5
2
I
, DRAIN CURRENT (A)
D
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
2
1.6
1.4
1.2
1
ID = 7.1A
V GS = 4.5 V
T
= 125°C
25°C
VGS = 4.5V
J
1.5
1
-55°C
0.5
0
0.8
0.6
0
5
10
15
20
25
-50
-25
0
25
50
75
100
125
150
I
, DRAIN CURRENT (A)
T
, JUNCTION TEMPERATURE (°C)
J
D
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
25
20
15
10
5
1.4
V DS = 5.0V
T
=-55°C
25°C
125°C
J
VDS = V GS
1.2
1
I D = 250µA
0.8
0.6
0.4
0.2
0
0
0.5
1
1.5
2
2.5
-50
-25
0
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
T
, JUNCTION TEMPERATURE (°C)
GS
J
Figure 6. Gate Threshold Variation
with Temperature.
Figure 5. Transfer Characteristics.
NDH833N Rev. C
Typical Electrical Characteristics (continued)
20
10
5
1.12
V GS = 0V
I D = 250µA
T
= 125°C
25°C
J
1.08
1.04
1
1
0.1
-55°C
0.01
0.96
0.92
0.001
0.0001
-50
-25
0
25
50
75
100
125
150
0
0.2
0.4
, BODY DIODE FORWARD VOLTAGE (V)
SD
0.6
0.8
1
1.2
V
T
, JUNCTION TEMPERATURE (°C)
J
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Figure 7. Breakdown Voltage Variation with
Temperature.
Temperature.
5000
5
ID = 7.1A
3000
2000
VDS =10V
4
3
2
1
0
C
C
iss
15V
1000
500
oss
C
rss
300
200
f = 1 MHz
VGS = 0V
100
0.1
0.2
V
0.5
1
2
5
10
20
0
10
20
30
40
, GATE CHARGE (nC)
g
50
60
70
80
90
100
, DRAIN TO SOURCE VOLTAGE (V)
Q
DS
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
ton
toff
VDD
td(off)
t d(on)
tr
tf
RL
VIN
90%
90%
D
VOUT
V
OUT
VGS
10%
10%
90%
RGEN
INVERTED
DUT
G
V
50%
50%
IN
S
10%
PULSE WIDTH
Figure 12. Switching Waveforms.
Figure 11. Switching Test Circuit.
NDH833N Rev. C
Typical Electrical and Thermal Characteristics (continued)
2.5
2
70
60
50
40
30
20
10
0
V DS = 5.0V
T
= -55°C
25°C
J
1a
1.5
1
125°C
1b
1c
0.5
0
4.5"x5" FR-4 Board
TA
25o
Still Air
=
C
0
0.2
0.4
0.6
0.8
1
0
5
10
15
20
25
2
2oz COPPER MOUNTING PAD AREA (in
)
I
, DRAIN CURRENT (A)
D
Figure 14. SuperSOTTM-8 Maximum Steady-State
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Power Dissipation versus Copper Mounting Pad
Area.
8
7
40
20
10
1a
3
1
6
1b
0.3
0.1
1c
VGS = 4.5V
4.5"x5" FR-4 Board
SINGLE PULSE
= C
25o
5
4
TA
Still Air
R
JA = See Note 1c
TA = 25°C
q
0.03
0.01
VGS
=
4.5V
0
0.2
0.4
0.6
0.8
)
1
0.1
0.2
0.5
DS
1
2
5
10
20 30
2
2oz COPPER MOUNTING PAD AREA (in
V
, DRAIN-SOURCE VOLTAGE (V)
Figure 15. Maximum Steady-State Drain Current
versus Copper Mounting Pad Area.
Figure 16. Maximum Safe Operating Area.
1
D = 0.5
0.2
0.5
R
(t) = r(t) * R
JA
q
0.3
0.2
JA
q
R
= See Note 1c
JA
q
0.1
0.1
P(pk)
0.05
t
1
0.05
t
2
0.02
0.01
Single Pulse
0.03
0.02
T
- T = P * R
(t)
J
JA
A
q
Duty Cycle, D = t / t
2
1
0.01
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 17. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDH833N Rev. C
SuperSOTTM-8 Tape and Reel Data and Package Dimensions
SSOT-8 Packaging
Configuration: Figure 1.0
Customized Label
Packaging Description:
SSOT-8 parts are shipped in tape. The carrier tape is
made from dissipative (carbon filled) poly carbonate
a
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
F63TNR Label
Antistatic Cover Tape
These full reels are individually barcode labeled and
placed inside
a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside
a barcode labeled shipping box which
comes in different sizes depending on t he number of parts
shipped.
Static Dissipative
Emboss ed Carrier Tape
852
F
831N
852
831N
852
F
831N
F
852
831N
F
852
831N
F
Pin 1
SSOT-8 Packaging Information
Standard
(no flow c ode)
D84Z
Packaging Option
SSOT-8 Unit Orientation
Packaging type
TNR
TNR
500
Qty per Reel/Tube/Bag
Reel Size
3,000
13" D ia
7" Dia
Box Dimension (mm)
Max qty per Box
343x64x343 184x187x47
6,000
0.0416
0.5615
1,000
0.0416
0.0980
Weight per unit (gm)
Weight per Reel (kg)
343mm x 342mm x 64mm
Intermediate box for Standard
and L99Z Options
F63TNR Label
Note/Comments
F63TNR
Label
F63TNR Label sample
LOT: CBVK741B019
F63TNR
Label
QTY: 3000
SPEC:
184mm x 187mm x 47mm
Pizza Box for D84Z Option
FSID: FDR835N
SSOT-8 Tape Leader and Trailer
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Configuration: Figur e 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
300mm minimum or
38 empty pockets
500mm minimum or
62 empty poc kets
August 1999, Rev. C
SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued
SSOT-8 Embossed Carrier Tape
Configuration: Figur e 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
SSOT-8
(12mm)
4.47
+/-0.10
5.00
+/-0.10
12.0
+/-0.3
1.55
+/-0.05
1.50
+/-0.10
1.75
+/-0.10
10.25
min
5.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
1.37
+/-0.10
0.280
+/-0.150
9.5
+/-0.025
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with r espect to t he EIA/Jedec RS-481
rotational and lateral movement requi rements (see sketches A, B, and C).
20 deg maximum
0.5mm
maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SSOT-8 Reel Configuration: Figur e 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7"Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Option
Tape Size
12mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
5.906
150
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
13" Dia
July 1999, Rev. C
SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued
SuperSOT -8 (FS PKG Code 34, 35)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0416
September 1998, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
TinyLogic™
UHC™
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CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GTO™
HiSeC™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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