NDP6020 [FAIRCHILD]
N-Channel Logic Level Enhancement Mode Field Effect Transistor; N沟道逻辑电平增强模式场效应晶体管型号: | NDP6020 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
文件: | 总12页 (文件大小:377K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
November 1996
NDP6020 / NDB6020
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These logic level N-Channel enhancement mode power
field effect transistors are produced using National's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters,
PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
35 A, 20 V. RDS(ON) = 0.023 W @ VGS= 4.5 V
RDS(ON) = 0.028 W @ VGS= 2.7 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through
hole and surface mount applications.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
NDP6020
NDB6020
Units
V
VDSS
Drain-Source Voltage
20
20
VDGR
V
Drain-Gate Voltage (RGS < 1 MW)
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
VGSS
ID
±8
35
V
A
100
PD
Total Power Dissipation @ TC = 25°C
Derate above 25°C
60
W
W/°C
°C
0.4
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
© 1997 Fairchild Semiconductor Corporation
NDP6020 Rev.C
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VDS = 16 V, VGS = 0 V
20
V
Zero Gate Voltage Drain Current
1
µA
mA
nA
nA
TJ = 55°C
10
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 4.5 V, ID = 18 A
0.4
0.2
0.62
0.35
1
V
TJ = 125°C
TJ = 125°C
0.7
RDS(ON)
Static Drain-Source On-Resistance
0.019 0.023
0.024 0.032
0.024 0.028
W
VGS = 2.7 V, ID = 16 A
VGS = 4.5 V, VDS = 5 V
VDS = 5 V, ID = 18 A
ID(on)
gFS
On-State Drain Current
60
A
S
Forward Transconductance
29
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
1170
610
pF
pF
pF
C
iss
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
180
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
Turn - On Rise Time
VDD = 20 V, ID = 35 A,
VGS = 5 V, RGEN = 10 W
R L = 0.5 W
7
20
nS
nS
148
300
tr
tD(off)
Turn - Off Delay Time
Turn - Off Fall Time
98
200
450
nS
nS
233
tf
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V,
ID = 35 A, VGS = 5 V
32
6
45
nC
nC
nC
11
NDP6020 Rev.C
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
35
100
1.3
90
A
A
ISM
VSD
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 35 A (Note 1)
1.1
43
V
VGS = 0 V, IF = 35 A,
dIF/dt = 100 A/µs
ns
trr
Irr
Reverse Recovery Current
1.1
3
A
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.5
°C/W
°C/W
R
JC
q
62.5
R
JA
q
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6020 Rev.C
Typical Electrical Characteristics
60
1.8
1.6
1.4
1.2
1
VGS = 4.5V
3.5
3.0
2.7
50
40
30
20
10
0
V GS
= 2.0V
2.5
2.5
2.7
2.0
3.0
3.5
4.0
4.5
5.0
1.5
0.8
0
10
20
30
40
50
60
0
1
2
3
4
5
I
, DRAIN CURRENT (A)
V
, DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 1. On-Region Characteristics.
1.8
1.8
V GS = 4.5 V
ID = 18A
1.6
1.4
1.2
1
1.6
1.4
1.2
1
V GS = 4.5V
T
J
= 125°C
25°C
0.8
0.6
0.4
-55°C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
T
, JUNCTION TEM PERATURE (°C)
I
, DRAIN CURRENT (A)
J
D
Figure 3. On-Resistance Variation
Figure 4. On-Resistance Variation with Drain
with Temperature.
Current and Temperature.
20
15
10
5
1.4
1.2
1
T
= -55°C
VDS = 5V
J
VDS = VGS
ID = 250µA
25°C
125°C
0.8
0.6
0.4
0.2
0
0.5
-50
-25
0
25
50
75
100
125
150
175
1
1.5
2
T
, JUNCTION TEMPERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
NDP6020 Rev.C
Typical Electrical Characteristics (continued)
20
5
1.15
VGS =0V
I D =250µA
1.1
1.05
1
T
= 125°C
J
1
0.5
25°C
0.1
0.01
-55°C
0.95
0.001
0.0001
0.9
-50
-25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1
1.2
T
, JUNCTION TEM PERATURE (°C)
V
, BODY DIODE FORWARD VOLTAGE (V)
J
SD
Figure 7. Breakdown Voltage Variation with
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
Temperature.
3500
8
6
4
2
0
ID = 35A
2000
1500
VDS = 10V
C
C
iss
1000
15V
20V
oss
500
f = 1 MHz
200
C
rss
VGS = 0V
100
0.1
0.5
1
5
10
20
0
8
16
24
32
40
V
, DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
g
DS
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
ton
toff
VDD
td(off)
t d(on)
tr
tf
RL
90%
VIN
90%
D
VOUT
VOUT
10%
VGEN
10%
90%
INVERTED
RGEN
RGS
DUT
G
VIN
50%
50%
S
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP6020 Rev.C
Typical Electrical Characteristics (continued)
150
100
50
V DS = 5V
T
= -55°C
25°C
J
40
30
20
10
0
50
20
10
5
125°C
VGS = 4.5V
SINGLE PULSE
R
= 2.5 °C/W
JC
q
T C = 25°C
2
0.5
1
2
3
5
10
20
30
0
10
20
30
40
50
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 14. Maximum Safe Operating Area.
Figure 13. Transconductance Variation with
Drain Current and Temperature.
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t) * R
JC
q
JC
q
R
= 2.5 °C/W
JC
q
0.1
0.1
P(pk)
0.05
0.05
0.02
0.01
t
1
t
2
0.03
0.02
T
- T = P
*
R
(t)
Single Pulse
J
C
JC
q
Duty Cycle, D = t /t
1
2
0.01
0.01
0.1
1
10
100
1000
t
,TIME (m s)
1
Figure 15. Transient Thermal Response Curve.
NDP6020 Rev.C
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing
Configuration: Figur e 1.0
Packaging Description:
TO-220 parts are shipped normally in tube. The tube is
made of PVC plastic treated with anti-static agent.These
tubes in standard option are placed inside
plastic bag, barcode labeled, and placed inside
a
dissipative
box
a
45 units per Tube
made of recyclable corrugated paper. One box contains
two bags maximum (see fig. 1.0). And one or several of
these boxes are placed inside
a labeled shipping box
whic h comes in different sizes dependi ng on the number
of parts shipped. The other option comes in bulk as
described in the Packaging Information table. The units in
this option are placed inside
static bubble sheet. These smaller boxes are individually
labeled and placed inside larger box (see fig. 3.0).
These larger or intermediate boxes then will be placed
finally inside a labeled shipping box which still comes in
different sizes depending on the number of units shipped.
a small box laid with anti-
a
12 Tubes per Bag
530mm x 130mm x 83mm
Intermediate box
2 bags per Box
Conduct ive Plastic Bag
TO-220 Packaging
Information: Figure 2.0
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
QTY:
1080
LOT:
CBVK741B019
1080 units maximum
quantity per box
TO-220 Packaging Information
NSID:
D/C1:
SPEC:
FDP7060
Standard
(no flow code)
Packaging Option
S62Z
SPEC REV:
QA REV:
D9842
B2
Packaging type
Rail/Tube
BULK
300
Qty per Tube/Box
Box Dimension (mm)
Max qty per Box
45
FSCINT Label
(FSCINT)
530x130x83 114x102x51
1,080
1,500
Weight per unit (gm)
1.4378
1.4378
Note/Comments
TO-220 bulk Packing
Configuration: Figure 3.0
Anti-static
530mm x 130mm x 83mm
Intermediate box
Bubbl e Sheets
FSCINT Label
1500 units maximum
quantity per intermediate box
300 units per
EO70 box
5 EO70 boxes per per
Intermediate Box
114mm x 102mm x 51mm
EO70 Immediate Box
FSCINT Label
TO-220 Tube
Configuration: Figure 4.0
0.123
+0.001
-0.003
0.165
0.080
Note: All dim ensions are in inches
0.275
0.450
±.030
9852
9852
9852
9852
9852
9852
9852 9852 9852 9852 9852
F F F F F
NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L
9852
F
F
F
F
F
F
F
NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L
1.300
±.015
0.160
0.032
±.003
20.000
+0.031
-0.065
0.800
0.275
August 1999, Rev. B
TO-220 Tape and Reel Data and Package Dimensions, continued
TO-220 (FS PKG Code 37)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
September 1998, Rev. A
TO-263AB/D2PAK Tape and Reel Data and Package
Dimensions
TO-263AB/D2PAK Packaging
Configuration: Figure 1.0
Packaging Description:
TO-263/D2PAK parts are shipped in tape. The carrier tape
ELECTROSTATIC
SENSITIVE DEVICES
DO NO T SHI P OR STO RE N EAR STRO NG ELECTROSTATIC
ELECTRO
is made from
a dissipative (carbon filled) polycarbonate
M
AGN ETI C, M AG NETIC O R R ADIO ACTIVE FI ELD S
TNR DATE
PT NUMB E
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
800 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). This and some other options are further
described in the Packaging Information table.
R
PEEL STRENGTH MIN ______________gms
MAX _____________gms
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled, dry
packed, and placed inside
a standard intermediate box
(illustrated in figure 1.0) made of recyclable corrugated
brown paper. One box contains one reel maximum. And
these boxes are placed inside a barcode labeled shipping
box which comes in different sizes depending on the
number of parts shipped.
Static Dissipative
Embossed Carrier Tape
Moisture Sensitive
Label
F63TNR
Label
Customized
Label
A 3 L 0 B 6 D F
3 5 9 F 8
A 3 L 0 B 6 D F
3 5 9 F 8
A 3 L 0 B 6 D F
3 5 9 F 8
A 3 L 0 B 6 D F
3 5 9 F 8
TO-263AB/D2PAK Packaging Information
Standard
(no flow code)
L86Z
Packaging Option
TO-263AB/D2PAK Unit Orientation
Packaging type
TNR
800
Rail/Tube
Qty per Reel/Tube/Bag
Reel Size
45
-
13" Dia
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel
359x359x57 530x130x83
800
1,080
1.4378
-
359mm x 359mm x 57mm
Standard Intermediate box
1.4378
1.6050
ESD Label
Note/Comments
Moisture Sensitive
Label
F63TNR Label sample
F63TNR Label
LOT: CBVK741B019
QTY: 800
SPEC:
FSID: FDB6320L
DRYPACK Bag
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
TO-263AB/D2PAK Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
400mm minimum or
25 empty pockets
1520mm minimum or
95 empty pockets
September 1999, Rev. B
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
TO263AB/
D2PAK
(24mm)
10.60
+/-0.10
15.80
+/-0.10
24.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
22.25
min
11.50
+/-0.10
16.0
+/-0.1
4.0
+/-0.1
4.90
+/-0.10
0.450
+/-0.150
21.0
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.9mm
maximum
10 deg maximum
Typical
component
cavity
center line
0.9mm
maximum
B0
10 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
TO-263AB/D2PAK Reel Configuration:
Figure 4.0
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max
Dim D
min
Dim N
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Reel
Option
Tape Size
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.961 +0.078/-0.000
24.4 +2/0
1.197
30.4
0.941 – 0.1.079
23.9 – 27.4
24mm
13" Dia
August 1999, Rev. B
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
August 1998, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
SyncFET™
TinyLogic™
UHC™
CROSSVOLT™
E2CMOSTM
VCX™
FACT™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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