NDP7050 [FAIRCHILD]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | NDP7050 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总12页 (文件大小：379K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 1996
NDP7050 / NDB7050
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
75A, 50V. RDS(ON) = 0.013W @ VGS=10V.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through
hole and surface mount applications.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
NDP7050
NDB7050
Units
V
VDSS
Drain-Source Voltage
50
50
VDGR
V
Drain-Gate Voltage (RGS < 1 MW)
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
VGSS
± 20
± 40
75
V
ID
Drain Current - Continuous
- Pulsed
A
225
PD
Maximum Power Dissipation @ TC = 25°C
Derate above 25°C
150
W
W/°C
°C
1
TJ,TSTG
TL
Operating and Storage Temperature Range
-65 to 175
275
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
°C
© 1997 Fairchild Semiconductor Corporation
NDP7050.SAM Rev. D
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS
Single Pulse Drain-Source Avalanche
Energy
VDD = 25 V, ID = 75 A
550
75
mJ
A
IAR
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VDS = 50 V, VGS = 0 V
50
V
Zero Gate Voltage Drain Current
250
1
µA
mA
nA
nA
TJ = 125°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
2
2.8
2.1
4
V
TJ = 125°C
TJ = 125°C
1.4
3.6
RDS(ON)
Static Drain-Source On-Resistance
0.01
0.013
W
0.015 0.023
39
ID(on)
gFS
On-State Drain Current
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 37.5 A
75
15
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
2960
1130
380
3600
1600
800
pF
pF
pF
C
iss
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
Turn - On Rise Time
VDD = 30 V, ID = 75 A,
VGS = 10 V, RGEN = 5 W
17
30
nS
nS
128
400
tr
tD(off)
Turn - Off Delay Time
Turn - Off Fall Time
54
90
80
nS
nS
200
tf
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 48 V,
ID = 75 A, VGS = 10 V
100
14.5
51
115
nC
nC
nC
NDP7050.SAM Rev. D
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
75
A
A
V
ISM
VSD
225
1.3
1.2
150
10
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 37.5 A (Note 1)
0.9
TJ = 125°C
VGS = 0 V, IF = 75 A, dIF/dt = 100 A/µs
0.84
80
trr
Irr
Reverse Recovery Time
Reverse Recovery Current
ns
A
2
4.8
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
°C/W
°C/W
R
JC
q
62.5
R
JA
q
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7050.SAM Rev. D
Typical Electrical Characteristics
120
2.5
2
VGS =20V
10
8.0
7.0
VGS = 5.0V
5.5
100
80
60
40
20
0
6.5
6.0
6.5
6.0
7.0
1.5
1
5.5
8.0
10
12
20
5.0
4.5
4.0
0.5
0
20
40
60
80
100
120
0
1
2
3
4
5
V
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DS
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 1. On-Region Characteristics.
2
1.8
1.6
1.4
1.2
1
1.8
ID = 40A
VGS = 10V
T
= 125°C
J
VGS = 10V
1.6
1.4
1.2
1
25°C
0.8
0.6
0.4
0.8
0.6
-55°C
-50
-25
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
T
, JUNCTION TEMPERATURE (°C)
J
I
, DRAIN CURRENT (A)
D
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
60
50
40
30
20
10
0
1.2
VDS = 10V
VDS = VGS
1.1
1
ID = 250µA
T
= -55°C
J
125°C
0.9
0.8
0.7
0.6
0.5
25°C
-50
-25
0
25
, JUNCTION TEMPERATURE (°C)
J
50
75
100
125
150
175
2
3
4
5
6
7
T
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 6. Gate Threshold Variation with
Figure 5. Transfer Characteristics.
Temperature.
NDP7050.SAM Rev. D
Typical Electrical Characteristics (continued)
1.15
100
50
I D = 250µA
VGS = 0V
1.1
1.05
1
10
1
T
= 125°C
J
25°C
-55°C
0.1
0.95
0.9
0.01
0.001
-50
-25
0
25
50
75
100
125
150
175
0.2
0.4
0.6
0.8
1
1.2
1.4
T
, JUNCTION TEMPERATURE (°C)
J
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
5000
20
ID = 75A
C
iss
3000
2000
VDS = 12V
15
10
5
48V
C
oss
1000
500
24V
f = 1 MHz
VGS = 0V
C
rss
300
200
0
1
2
5
10
20
30
60
0
25
50
Q
75
100
125
150
V
, DRAIN TO SOURCE VOLTAGE (V)
, GATE CHARGE (nC)
g
DS
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
ton
toff
VDD
td(off)
td(on)
tf
tr
RL
90%
VIN
90%
D
VOUT
VOUT
10%
10%
90%
VGS
INVERTED
RGEN
DUT
G
VIN
50%
50%
S
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP7050.SAM Rev. D
Typical Electrical Characteristics (continued)
60
300
100
VDS = 10V
T
= -55°C
J
50
40
30
20
10
0
25°C
125°C
30
10
VGS = 20V
3
1
SINGLE PULSE
R
JC = 1 oC/W
q
TC = 25°C
0.3
0
10
20
30
40
50
60
1
2
3
5
10
20
30
50
100
I
, DRAIN CURRENT (A)
D
V
DS
, DRAIN-SOURCE VOLTAGE (V))
Figure 13. Transconductance Variation with
Drain Current and Temperature.
Figure 14. Maximum Safe Operating Area.
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t) * R
JC
q
JC
q
R
= 1.0 °C/W
JC
q
0.1
0.1
P(pk)
0.05
0.05
0.02
t1
t 2
0.03
T
- T = P * R
(t)
0.01
J
C
qJC
0.02
Duty Cycle, D = t1 /t2
Single Pulse
0.05
0.01
0.01
0.1
0.5
1
5
10
50
100
500
1000
t
,TIM E (m s)
1
Figure 15. Transient Thermal Response Curve.
NDP7050.SAM Rev. D
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing
Configuration: Figur e 1.0
Packaging Description:
TO-220 parts are shipped normally in tube. The tube is
made of PVC plastic treated with anti-static agent.These
tubes in standard option are placed inside
plastic bag, barcode labeled, and placed inside
a
dissipative
box
a
45 units per Tube
made of recyclable corrugated paper. One box contains
two bags maximum (see fig. 1.0). And one or several of
these boxes are placed inside
a labeled shipping box
whic h comes in different sizes dependi ng on the number
of parts shipped. The other option comes in bulk as
described in the Packaging Information table. The units in
this option are placed inside
static bubble sheet. These smaller boxes are individually
labeled and placed inside larger box (see fig. 3.0).
These larger or intermediate boxes then will be placed
finally inside a labeled shipping box which still comes in
different sizes depending on the number of units shipped.
a small box laid with anti-
a
12 Tubes per Bag
530mm x 130mm x 83mm
Intermediate box
2 bags per Box
Conduct ive Plastic Bag
TO-220 Packaging
Information: Figure 2.0
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
QTY:
1080
LOT:
CBVK741B019
1080 units maximum
quantity per box
TO-220 Packaging Information
NSID:
D/C1:
SPEC:
FDP7060
Standard
(no flow code)
Packaging Option
S62Z
SPEC REV:
QA REV:
D9842
B2
Packaging type
Rail/Tube
BULK
300
Qty per Tube/Box
Box Dimension (mm)
Max qty per Box
45
FSCINT Label
(FSCINT)
530x130x83 114x102x51
1,080
1,500
Weight per unit (gm)
1.4378
1.4378
Note/Comments
TO-220 bulk Packing
Configuration: Figure 3.0
Anti-static
530mm x 130mm x 83mm
Intermediate box
Bubbl e Sheets
FSCINT Label
1500 units maximum
quantity per intermediate box
300 units per
EO70 box
5 EO70 boxes per per
Intermediate Box
114mm x 102mm x 51mm
EO70 Immediate Box
FSCINT Label
TO-220 Tube
Configuration: Figure 4.0
0.123
+0.001
-0.003
0.165
0.080
Note: All dim ensions are in inches
0.275
0.450
±.030
9852
9852
9852
9852
9852
9852
9852 9852 9852 9852 9852
F F F F F
NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L
9852
F
F
F
F
F
F
F
NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L
1.300
±.015
0.160
0.032
±.003
20.000
+0.031
-0.065
0.800
0.275
August 1999, Rev. B
TO-220 Tape and Reel Data and Package Dimensions, continued
TO-220 (FS PKG Code 37)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
September 1998, Rev. A
TO-263AB/D2PAK Tape and Reel Data and Package
Dimensions
TO-263AB/D2PAK Packaging
Configuration: Figure 1.0
Packaging Description:
TO-263/D2PAK parts are shipped in tape. The carrier tape
ELECTROSTATIC
SENSITIVE DEVICES
is made from
a dissipative (carbon filled) polycarbonate
DO NO
T
S
M
HI
P
OR
S
TO
RE
N
E
AR
S
T
RO NG
E
L
E
CTROS
T
ATIC
E
L
E
CTRO
AGN
E
TI
C,
M
AG NE
T
IC
O
R R ADIO ACTIVE FI ELD S
TNR DATE
PT NUMB E
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
800 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). This and some other options are further
described in the Packaging Information table.
R
PEEL STRENGTH MIN ______________gms
MAX _____________gms
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled, dry
packed, and placed inside
a standard intermediate box
(illustrated in figure 1.0) made of recyclable corrugated
brown paper. One box contains one reel maximum. And
these boxes are placed inside a barcode labeled shipping
box which comes in different sizes depending on the
number of parts shipped.
Static Dissipative
Embossed Carrier Tape
Moisture Sensitive
Label
F63TNR
Label
Customized
Label
A 3 L 0 B 6 D F
3 5 9 F 8
A 3 L 0 B 6 D F
3 5 9 F 8
A 3 L 0 B 6 D F
3 5 9 F 8
A 3 L 0 B 6 D F
3 5 9 F 8
TO-263AB/D2PAK Packaging Information
Standard
(no flow code)
L86Z
Packaging Option
TO-263AB/D2PAK Unit Orientation
Packaging type
TNR
800
Rail/Tube
Qty per Reel/Tube/Bag
Reel Size
45
-
13" Dia
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel
359x359x57 530x130x83
800
1,080
1.4378
-
359mm x 359mm x 57mm
Standard Intermediate box
1.4378
1.6050
ESD Label
Note/Comments
Moisture Sensitive
Label
F63TNR Label sample
F63TNR Label
LOT: CBVK741B019
QTY: 800
SPEC:
FSID: FDB6320L
DRYPACK Bag
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
TO-263AB/D2PAK Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
400mm minimum or
25 empty pockets
1520mm minimum or
95 empty pockets
September 1999, Rev. B
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
TO263AB/
D2PAK
(24mm)
10.60
+/-0.10
15.80
+/-0.10
24.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
22.25
min
11.50
+/-0.10
16.0
+/-0.1
4.0
+/-0.1
4.90
+/-0.10
0.450
+/-0.150
21.0
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.9mm
maximum
10 deg maximum
Typical
component
cavity
center line
0.9mm
maximum
B0
10 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
TO-263AB/D2PAK Reel Configuration:
Figure 4.0
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max
Dim D
min
Dim N
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Reel
Option
Tape Size
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.961 +0.078/-0.000
24.4 +2/0
1.197
30.4
0.941 – 0.1.079
23.9 – 27.4
24mm
13" Dia
August 1999, Rev. B
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
August 1998, Rev. A
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not intended to be an exhaustive list of all such trademarks.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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Not In Production
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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