NDS336PD87Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3;
| 型号： | NDS336PD87Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 |
| 文件： | 总7页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 1997
NDS336P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
-1.2 A, -20 V, RDS(ON) = 0.27 W @ VGS= -2.7 V
SuperSOTTM-3 P-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage
applications such as notebook computer power management,
portable electronics, and other battery powered circuits where
fast high-side switching, and low in-line power loss are needed
in a very small outline surface mount package.
RDS(ON) = 0.2 W @ VGS = -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.0V.
Proprietary package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface
package.
Mount
________________________________________________________________________________
D
S
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
NDS336P
Units
Drain-Source Voltage
-20
±8
V
V
A
VDSS
VGSS
ID
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
- Pulsed
(Note 1a)
-1.2
-10
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.5
W
0.46
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS336P Rev. E
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
VDS = -16 V, VGS = 0 V
-20
V
Zero Gate Voltage Drain Current
-1
µA
µA
nA
nA
-10
TJ =55°C
IGSS
IGSS
Gate - Body Leakage Current
Gate - Body Leakage Current
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
VGS = -2.7 V, ID = -1.2 A
-0.5
-0.3
-0.78
-0.58
0.22
0.34
0.16
-1
V
-0.8
0.27
0.49
0.2
TJ =125°C
TJ =125°C
RDS(ON)
Static Drain-Source On-Resistance
W
VGS = -4.5 V, ID = -1.3 A
VGS = -2.7 V, VDS = -5 V
VDS = -5 V, ID = -1.2 A
On-State Drain Current
-2
A
S
ID(ON)
gFS
Forward Transconductance
-3
DYNAMIC CHARACTERISTICS
Input Capacitance
360
170
60
pF
pF
pF
Ciss
Coss
Crss
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
VDD = -5 V, ID = -1 A,
8
15
50
60
45
8.5
ns
ns
VGS = -4.5 V, RGEN = 6 W
29
33
23
5.7
0.7
1.8
ns
ns
Qg
Qgs
Qgd
VDS = -10 V, ID = -1.2 A,
VGS = -4.5 V
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
NDS336P Rev. E
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Min
Typ
Max
Units
IS
Maximum Continuous Source Current
-0.42
-10
A
A
V
Maximum Pulsed Drain-Source Diode Forward Current
ISM
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -0.42 (Note 2)
-0.65
-1.2
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solde mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
T
R
- T
T
- T
J
J
A
A
( )
PD t =
2 ( )
= ID t ´ RDS ON @T
( )
t
=
(
)
J
( )
t
R
+R
q
CA
q
q
JA
JC
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250oC/W when mounted on a 0.02 in2 pad of 2oz copper.
b. 270oC/W when mounted on a 0.001 in2 pad of 2oz copper.
1a
1b
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS336P Rev. E
Typical Electrical Characteristics
2
1.8
1.6
1.4
1.2
1
-10
V
= -4.5V
-4.0
GS
-3.5
V
=-2.0V
GS
-8
-6
-4
-2
0
-3.0
-2.5
-2.7
-2.7
-2.5
-3.0
-3.5
-2.0
-4.0
-4.5
0.8
0.6
0
-2
-4
-6
-8
-10
0
-1
-2
-3
-4
-5
I
, DRAIN CURRENT (A)
V
, DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
1.4
1.2
1
2
VGS = -2.7V
I
V
= -1.2A
= -2.7V
D
1.8
GS
1.6
1.4
1.2
1
T = 125°C
J
25°C
-55°C
0.8
0.6
0.8
0.6
-50
-25
0
T
25
50
75
100
125
150
0
-2
-4
-6
-8
-10
, JUNCTION TEMPERATURE (°C)
I
, DRAIN CURRENT (A)
J
D
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
-5
-4
-3
-2
-1
0
1.2
1.1
1
VDS = -5V
T = -55°C
V
= V
GS
= -250µA
J
DS
-25°C
-125°C
I
D
0.9
0.8
0.7
0.6
-0.5
-1
-1.5
-2
-2.5
-3
-50
-25
0
T
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
GS
J
Figure 6. Gate Threshold Variation
with Temperature.
Figure 5. Transfer Characteristics.
NDS336P Rev. D
Typical Electrical Characteristics (continued)
5
1
1.06
VGS = 0V
I
= - 250µA
D
1.04
1.02
1
T
= 125°C
J
0.1
0.01
25°C
-55°C
0.001
0.98
0.96
0.0001
-50
-25
0
25
50
75
100
125
150
0.2
0.4
-V
0.6
0.8
1
1.2
T
, JUNCTION TEMPERATURE (°C)
, BODY DIODE FORWARD VOLTAGE (V)
J
SD
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Figure 7. Breakdown Voltage Variation with
Temperature.
Temperature.
800
5
VDS = -5V
ID = -1.2A
-10V
500
4
C
iss
-15V
300
200
3
2
1
0
C
oss
100
f = 1 MHz
VGS = 0V
C
rss
60
40
0
2
4
6
8
0.1
0.2
0.5
1
2
5
10
20
Q
, GATE CHARGE (nC)
-V , DRAIN TO SOURCE VOLTAGE (V)
g
DS
Figure 10. Gate Charge Characteristics.
Figure 9. Capacitance Characteristics.
VDD
ton
toff
td(off)
t d(on)
tr
tf
RL
VIN
90%
90%
D
VOUT
V
OUT
VGS
10%
10%
90%
RGEN
DUT
G
V
50%
50%
IN
S
10%
INVERTED
PULSE WIDTH
Figure 12. Switching Waveforms.
Figure 11. Switching Test Circuit.
NDS336P Rev. D
Typical Electrical Characteristics (continued)
20
10
5
8
VDS= -5V
TJ = -55°C
-25°C
6
4
2
0
2
1
0.5
-125°C
VGS = -2.7V
SINGLE PULSE
RqJA= See Note 1b
TA = 25°C
0.1
0.05
0.01
0.1
0.2
0.5
1
2
5
10
20 30
0
-2
-4
-6
-8
-10
-V , DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 14. Maximum Safe Operating Area.
Figure 13. Transconductance Variation with
Drain Current and Temperature.
1
1.6
0.8
0.6
0.4
0.2
0
1.4
1.2
1
1a
1b
1a
1b
4.5"x5" FR-4 Board
TA = 25 o
Still Air
C
4.5"x5" FR-4 Board
TA = 25o
Still Air
C
VGS = -2.7V
0.8
0
0.1
0.2
0.3
2
0.4
0
0.1
0.2
0.3
2
0.4
2oz COPPER MOUNTING PAD AREA (in
)
2oz COPPER MOUNTING PAD AREA (in
)
Figure 16. Maximum Steady-State Drain
Current versus Copper Mounting Pad Area.
Figure 15. SuperSOTTM _ 3 Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
1
D = 0.5
0.5
R
R
(t) = r(t) * R
JA
q
JA
q
0.2
0.1
0.2
0.1
=
See Note 1b
qJA
0.05
0.05
P(pk)
0.02
0.01
0.02
0.01
t
1
t
2
Single Pulse
T - T = P * R
(t)
JA
q
J
A
0.005
Duty Cycle, D = t /t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
1
Figure 17. Transient Thermal Response Curve.
Note : Characterization performed using the conditions described in note 1b. Transient thermal response will
change depending on the circuit board design.
NDS336P Rev. D
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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