NDS351AN [TYSEMI]

SUPERSOT-3;


型号：	NDS351AN
厂家：	TY Semiconductor Co., Ltd
描述：	SUPERSOT-3
文件：	总3页 (文件大小：255K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Type

Product specification

NDS351AN

General Description

Features

1.2A, 30 V. R_DS(ON)= 0.25 W @ V_GS= 4.5 V

These N-Channel logic level enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage

applications in notebook computers, portable phones, PCMCIA

R_DS(ON)= 0.16 W @ V_GS= 10 V.

Industry standard outline SOT-23 surface mount package

using proprietary SuperSOT^TM-3 design for superior

thermal and electrical capabilities.

cards, and

other battery powered circuits where fast

High density cell design for extremely low R_DS(ON)

switching, and low in-line power loss are needed in a very small

outline surface mount package.

Exceptional on-resistance and maximum DC current

capability.

Compact industry standard SOT-23 surface mount

_________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

NDS351AN

Units

Drain-Source Voltage

Gate-Source Voltage - Continuous

Maximum Drain Current - Continuous

- Pulsed

± 1.2

(Note 1a)

± 10

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

P_D

0.46

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

R_q

Thermal Resistance, Junction-to-Ambient (Note 1a)

250

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

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SMD Type

Product specification

NDS351AN

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

V_GS= 0 V, I_D= 250 µA

V_DS= 24 V, V_GS= 0 V

Zero Gate Voltage Drain Current

µA

T_J=125°C

I_GSSF

I_GSSR

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

V_GS= 20 V_DS= 0 V

100

-100

V_GS= -20 V, V_DS= 0 V

ON CHARACTERISTICS (Note 2)

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= 250 µA

V_GS= 4.5 V, I_D= 1.2 A

0.8

0.5

1.7

1.3

1.5

T_J=125°C

Static Drain-Source On-Resistance

0.19

0.28

0.125

0.25

0.37

0.16

R_DS(ON)

V_GS= 10 V, I_D= 1.4 A

V_GS= 4.5 V, V_DS= 5 V

V_DS= 5 V, I_D= 1.2 A,

On-State Drain Current

3.5

I_D(ON)

g_FS

Forward Transconductance

1.8

DYNAMIC CHARACTERISTICS

Input Capacitance

125

100

C_iss

C_oss

C_rss

V_DS= 10 V, V_GS= 0 V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn - On Delay Time

Turn - On Rise Time

Turn - Off Delay Time

Turn - Off Fall Time

Total Gate Charge

V_DD= 10 V, I_D= 1 A,

2.7

V_GS= 10 V, R_GEN= 50 W

1.9

0.5

0.9

Q_g

Q_gs

Q_gd

V_DS= 10 V, I_D= 1.2 A,

V_GS= 4.5 V

Gate-Source Charge

Gate-Drain Charge

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sales@twtysemi.com

4008-318-123

SMD Type

Product specification

NDS351AN

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I_S

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

0.42

I_SM

V_SD

Drain-Source Diode Forward Voltage

V_GS= 0 V, I_S= 1.2 A (Note 2)

0.8

1.2

Notes:

1. R_q_JAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

guaranteed by design while R_q_CAis determined by the user's board design.

the drain pins. R_q_JCis

- T

P_D

= I²_D(t) ´ R_{DS(ON )}

_qJC+R_qCA(t)

( )

_qJA(t)

Typical R_q_JAusing the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 250^oC/W when mounted on a 0.02 in²pad of 2oz copper.

b. 270^oC/W when mounted on a 0.001 in²pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

3 of 3

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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