NMT2222L99Z [FAIRCHILD]

Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon;


型号：	NMT2222L99Z
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon 开关光电二极管晶体管
文件：	总6页 (文件大小：113K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PN2222A

MMBT2222A

PZT2222A

TO-92

SOT-23

Mark: 1P

SOT-223

MMPQ2222

NMT2222

SOT-6

Mark: .1B

SOIC-16

pin #1

NPN General Purpose Amplifier

This device is for use as a medium power amplifier and switch

requiring collector currents up to 500 mA. Sourced from Pro-

cess 19.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

6.0

1.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

1997 Fairchild Semiconductor Corporation

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CEX

Collector-Emitter Breakdown Voltage* I_C= 10 mA, I_B= 0

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I = 10 A, I = 0

6.0

I = 10 A, I = 0

V_CE= 60 V, V_EB(OFF)= 3.0 V

I_CBO

Collector Cutoff Current

V_CB= 60 V, I_E= 0

V_CB= 60 V, I_E= 0, T = 150 C

0.01

I_EBO

I_BL

Emitter Cutoff Current

Base Cutoff Current

V_EB= 3.0 V, I_C= 0

V_CE= 60 V, V_EB(OFF)= 3.0 V

ON CHARACTERISTICS

h_FE

DC Current Gain

I_C= 0.1 mA, V_CE= 10 V

I_C= 1.0 mA, V_CE= 10 V

I_C= 10 mA, V_CE= 10 V

I_C= 10 mA, V_CE= 10 V, T_A= -55°C

I_C= 150 mA, V_CE= 10 V*

I_C= 150 mA, V_CE= 1.0 V*

I_C= 500 mA, V_CE= 10 V*

I_C= 150 mA, I_B= 15 mA

I_C= 500 mA, I_B= 50 mA

I_C= 150 mA, I_B= 15 mA

I_C= 500 mA, I_B= 50 mA

100

300

Collector-Emitter Saturation

Voltage*

Base-Emitter Saturation Voltage*

0.3

1.0

1.2

2.0

V_CE(sat)

V_BE(sat)

0.6

SMALL SIGNAL CHARACTERISTICS (except MMPQ2222 and NMT2222)

f_T

Current Gain - Bandwidth Product

I_C= 20 mA, V_CE= 20 V, f = 100 MHz

300

MHz

Output Capacitance

V_CB= 10 V, I_E= 0, f = 100 kHz

8.0

C_obo

C_ibo

rb’C_C

Input Capacitance

V_EB= 0.5 V, I_C= 0, f = 100 kHz

I_C= 20 mA, V_CB= 20 V, f = 31.8 MHz

Collector Base Time Constant

Noise Figure

150

4.0

I = 100 A, V = 10 V,

R = 1.0 k , f = 1.0 kHz

Ω

Real Part of Common-Emitter

High Frequency Input Impedance

I_C= 20 mA, V_CE= 20 V, f = 300 MHz

Ω

Re(h_ie

)

SWITCHING CHARACTERISTICS (except MMPQ2222 and NMT2222)

Delay Time

Rise Time

Storage Time

Fall Time

V_CC= 30 V, V_BE(OFF)= 0.5 V,

I_C= 150 mA, I_B1= 15 mA

V_CC= 30 V, I_C= 150 mA,

I_B1= I_B2= 15 mA

t_d

t_r

225

t_s

t_f

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model

NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0

Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6

Vtf=1.7 Xtf=3 Rb=10)

NPN General Purpose Amplifier

(continued)

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

PN2222A

*PZT2222A

P_D

Total Device Dissipation

625

5.0

1,000

8.0

mW/ C

Derate above 25 C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

125

R_θ

C/W

Symbol

Characteristic

Max

Units

**MMBT2222A

MMPQ2222

P_D

Total Device Dissipation

350

2.8

1,000

8.0

mW/ C

Derate above 25 C

Thermal Resistance, Junction to Ambient

Effective 4 Die

357

R_θ

C/W

125

240

Each Die

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

Collector-Emitter Saturation

Voltage vs Collector Current

500

400

300

200

100

0.4

0.3

0.2

0.1

= 5V

= 10

125 °C

25 °C

125 °C

25 °C

- 40 °C

0.1

0.3

100 300

100

500

I_C- COLLECTOR CURRENT (mA)

I _C- COLLECTOR CURRENT (mA)

Base-Emitter ON Voltage vs

Collector Current

Base-Emitter Saturation

Voltage vs Collector Current

0.8

0.6

0.4

0.2

β = 10

= 5V

0.8

0.6

0.4

- 40 °C

25 °C

125 °C

0.1

100

500

I _C- COLLECTOR CURRENT (mA)

I_C- COLLECTOR CURRENT (mA)

NPN General Purpose Amplifier

(continued)

Typical Characteristics (continued)

Collector-Cutoff Current

Emitter Transition and Output

vs Ambient Temperature

Capacitance vs Reverse Bias Voltage

500

f = 1 MHz

= 40V

100

0.1

100

125

150

0.1

100

T_A- AMBIENT TEMPERATURE ( C)

REVERSE BIAS VOLTAGE (V)

Turn On and Turn Off Times

vs Collector Current

Switching Times

vs Collector Current

400

320

240

160

400

320

240

160

I_B1= I_B2

= 25 V

off

100

1000

100

- COLLECTOR CURRENT (mA)

1000

- COLLECTOR CURRENT (mA)

Power Dissipation vs

Ambient Temperature

0.75

0.5

SOT-223

TO-92

SOT-23

0.25

100

125

150

TEMPERATURE (^oC)

NPN General Purpose Amplifier

(continued)

Test Circuits

30 V

200 Ω

16 V

1.0 KΩ

≤ 200ns

500 Ω

FIGURE 1: Saturated Turn-On Switching Time

6.0 V

- 15 V

37 Ω

30 V

1.0 KΩ

≤ 200ns

50 Ω

FIGURE 2: Saturated Turn-Off Switching Time

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

HiSeC™

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TinyLogic™

UHC™

Bottomless™

CoolFET™

CROSSVOLT™

E²CMOS^TM

FACT™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

QFET™

VCX™

QS™

FACT Quiet Series™

FAST

FASTr™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

GTO™

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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

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systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. E

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