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NMT2907 [FAIRCHILD]

PNP General Purpose Amplifier; PNP通用放大器
NMT2907
型号： NMT2907
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

PNP General Purpose Amplifier
PNP通用放大器

放大器
文件： 总7页 (文件大小：98K)
中文：  中文翻译
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PN2907A  
MMBT2907A  
PZT2907A  
C
C
E
E
C
B
TO-92  
C
B
SOT-23  
Mark: 2F  
B
SOT-223  
E
PNP General Purpose Amplifier  
This device is designed for use as a general purpose amplifier  
and switch requiring collector currents to 500 mA. Sourced  
from Process 63.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
60  
60  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
800  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN2907A  
*MMBT2907A **PZT2907A  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
1,000  
8.0  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
1998 Fairchild Semiconductor Corporation  
PNP General Purpose Amplifier  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
IB  
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0  
60  
60  
V
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Base Cutoff Current  
I = 10 A, I = 0  
µ
C
E
5.0  
V
I = 10 A, I = 0  
µ
E
C
VCB = 30 V, VEB = 0.5 V  
VCE = 30 V, VBE = 0.5 V  
VCB = 50 V, IE = 0  
50  
50  
nA  
nA  
ICEX  
Collector Cutoff Current  
ICBO  
Collector Cutoff Current  
0.02  
20  
A
A
µ
µ
VCB = 50 V, I = 0, T = 150 C  
°
E
A
ON CHARACTERISTICS  
hFE  
DC Current Gain  
IC = 0.1 mA, VCE = 10 V  
IC = 1.0 mA, VCE = 10 V  
IC = 10 mA, VCE = 10 V  
IC = 150 mA, VCE = 10 V*  
IC = 500 mA, VCE = 10 V*  
IC = 150 mA, IB = 15 mA  
IC = 500 mA, IB = 50 mA  
IC = 150 mA, IB = 15 mA*  
IC = 500 mA, IB = 50 mA  
75  
100  
100  
100  
50  
300  
Collector-Emitter Saturation Voltage*  
Base-Emitter Saturation Voltage  
0.4  
1.6  
1.3  
2.6  
V
VCE(sat)  
VBE(sat)  
V
V
V
SMALL SIGNAL CHARACTERISTICS  
fT  
Current Gain - Bandwidth Product  
IC = 50 mA, VCE = 20 V,  
f = 100 MHz  
VCB = 10 V, IE = 0,  
f = 100 kHz  
VEB = 2.0 V, IC = 0,  
f = 100 kHz  
200  
MHz  
pF  
Output Capacitance  
8.0  
30  
Cobo  
Cibo  
Input Capacitance  
pF  
SWITCHING CHARACTERISTICS  
Turn-on Time  
Delay Time  
Rise Time  
VCC = 30 V, IC = 150 mA,  
IB1 = 15 mA  
45  
10  
ns  
ns  
ns  
ns  
ns  
ns  
ton  
td  
40  
tr  
Turn-off Time  
Storage Time  
Fall Time  
VCC = 6.0 V, IC = 150 mA  
IB1 = IB2 = 15 mA  
100  
80  
toff  
ts  
30  
tf  
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%  
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Spice Model  
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2  
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p  
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)  
PNP General Purpose Amplifier  
(continued)  
Typical Characteristics  
Collector-Emitter Saturation  
Voltage vs Collector Current  
Typical Pulsed Current Gain  
vs Collector Current  
500  
400  
300  
200  
100  
0
0.5  
0.4  
0.3  
0.2  
0.1  
0
VCE = 5V  
β = 10  
125 °C  
25 °C  
25 °C  
125 °C  
- 40 °C  
- 40 °C  
0.1  
0.3  
1
3
10  
30  
100 300  
1
10  
100  
500  
IC - COLLECTOR CURRENT (mA)  
IC - COLLECTOR CURRENT (mA)  
Base-Emitter Saturation  
Voltage vs Collector Current  
Base Emitter ON Voltage vs  
Collector Current  
1
0.8  
0.6  
0.4  
0.2  
0
1
0.8  
0.6  
0.4  
0.2  
0
- 40 °C  
- 40 °C  
25 °C  
25 °C  
125 °C  
125 °C  
β = 10  
V
= 5V  
CE  
1
10  
100  
500  
0.1  
1
10  
25  
I C- COLLECTOR CURRENT (mA)  
IC - COLLECTOR CURRENT (mA)  
Input and Output Capacitance  
vs Reverse Bias Voltage  
Collector-Cutoff Current  
vs Ambient Temperature  
20  
16  
12  
8
100  
10  
V
= 35V  
CB  
C
ib  
1
0.1  
C
ob  
4
0.01  
0
25  
50  
75  
100  
125  
0.1  
1
10  
50  
TA- AMBIE NT TEMP ERATURE ( C)  
REVERSE BIAS VOLTAGE (V)  
°
PNP General Purpose Amplifier  
(continued)  
Typical Characteristics (continued)  
Switching Times  
vs Collector Current  
Turn On and Turn Off Times  
vs Collector Current  
250  
500  
400  
300  
200  
100  
0
I
I
c
c
IB1= IB2  
=
IB1= IB2=  
10  
10  
200  
150  
100  
50  
V
= 15 V  
V
= 15 V  
cc  
cc  
t
s
t
f
t
t
off  
r
t
on  
t
d
0
10  
10  
100  
- COLLECTOR CURRENT (mA)  
1000  
100  
- COLLECTOR CURRENT (mA)  
1000  
I
I
C
C
Power Dissipation vs  
Ambient Temperature  
Rise Time vs Collector  
and Turn On Base Currents  
1
0.75  
0.5  
50  
SOT-223  
20  
10  
5
TO-92  
t
= 15 V  
r
SOT-23  
30 ns  
60 ns  
0.25  
0
2
1
10  
100  
500  
0
25  
50  
75  
100  
125  
150  
TEMPERATURE (oC)  
I
- COLLECTOR CURRENT (mA)  
C
PNP General Purpose Amplifier  
(continued)  
Typical Common Emitter Characteristics (f = 1.0kHz)  
Common Emitter Characteristics  
Common Emitter Characteristics  
5
1.3  
1.2  
1.1  
1
h
oe  
h
h
h
h
re  
ie  
h
and h  
oe  
fe  
h
2
1
re  
re  
oe  
h
fe  
h
0.5  
ie  
h
ie  
0.9  
0.8  
I
T
= -10mA  
= 25oC  
A
V
T
= -10 V  
0.2  
C
CE  
= 25oC  
h
fe  
A
0.1  
_
_
_
_
_
_
1
2
5
10  
20  
50  
-4  
-8  
-12  
-16  
-20  
I C - COLLECTOR CURRENT (mA)  
VCE- COLLECTOR VOLTAGE (V)  
Common Emitter Characteristics  
1.5  
1.4  
1.3  
1.2  
1.1  
1
I
V
= -10mA  
= -10 V  
h
h
h
h
C
fe  
ie  
CE  
re  
oe  
h
oe  
0.9  
0.8  
0.7  
0.6  
0.5  
h
h
re  
ie  
h
fe  
-40  
-20  
0
20  
40  
60  
80  
100  
T A - AMBIENT TEMPERATURE (oC)  
PNP General Purpose Amplifier  
(continued)  
Test Circuits  
- 30 V  
200 Ω  
1.0 KΩ  
0
- 16 V  
50 Ω  
≤ 200ns  
FIGURE 1: Saturated Turn-On Switching Time Test Circuit  
- 6.0 V  
1.5 V  
1 KΩ  
37 Ω  
NOTE: BVEBO = 5.0 V  
1.0 KΩ  
0
- 30 V  
50 Ω  
≤ 200ns  
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
PowerTrench  
QFET™  
QS™  
SyncFET™  
TinyLogic™  
UHC™  
ACEx™  
FASTr™  
GlobalOptoisolator™  
GTO™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
QT Optoelectronics™  
VCX™  
HiSeC™  
Quiet Series™  
SILENT SWITCHER  
SMART START™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
POP™  
E2CMOSTM  
EnSignaTM  
FACT™  
FACT Quiet Series™  
FAST  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. G  

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