NZT902 [FAIRCHILD]
NPN Low Saturation Transistor; NPN低饱和晶体管
| 型号： | NZT902 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Low Saturation Transistor |
| 文件： | 总5页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2006
NZT902
tm
NPN Low Saturation Transistor
4
•
These devices are designed with high current gain and
low saturation voltage with collector currents up to 3A continuous.
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
90
V
V
VCBO
VEBO
IC
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
120
5
V
- Continuous
3
A
TJ
Junction Temperature
150
°C
°C
TSTG
Storage Temperature Range
- 55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T =25°C unless otherwise noted
a
Units
Symbol
Parameter
Value
1
PD
Total Device Dissipation
W
RθJA
Thermal Resistance, Junction to Ambient
125
°C/W
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm.
Electrical Characteristics*
T = 25°C unless otherwise noted
a
Symbol
Parameter
Test Conditions
Min.
90
Typ. Max. Units
BVCEO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
IC = 10mA
V
V
V
BVCBO
BVEBO
ICBO
IC = 100µA
IE = 100µA
120
5
VCB = 100V
VCB = 100V, Ta = 100 °C
100
10
nA
uA
IEBO
hFE
Emitter-Base Cutoff Current
DC Current Gain
VEB = 4V
100
nA
IC = 0.1A, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
80
80
25
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 0.1A, IB = 5.0mA
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
50
250
600
mV
mV
mV
VBE(sat)
Cobo
fT
Base-Emitter Saturation Voltage
Output Capacitance
IC = 1A, IB = 100mA
1.25
35
V
VCB = 10V, IE = 0, f = 1MHz
IC = 100mA, VCE = 5V, f = 100MHz
pF
Transition Frequency
75
MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2006 Fairchild Semiconductor Corporation
NZT902 Rev. B
1
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
350
0.40
150oC
1.6mA
1.4mA
Vce=2V
0.35
300
75oC
0.30
25oC
250
1.2mA
0.25
200
1.0mA
-25oC
0.20
0.8mA
150
0.15
-50oC
100
0.6mA
0.10
0.4mA
50
0.05
Ib=0.2mA
0
1E-3
0.00
0.0
0.01
0.1
1
0.5
1.0
1.5
2.0
Collector Current, [A]
Collector-Emitter Voltage, Vce[V]
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
0.5
1.2
B=10
B=10
150oC
75oC
0.4
-50oC
1.0
-25oC
0.3
0.8
25oC
0.2
0.6
25oC
75oC
-25oC
-50oC
150oC
0.1
0.4
0.0
0.1
0.2
0.01
1
0.1
1
Collector Current, [A]
Collector Current, [A]
Figure 5. Output Capacitance
Figure 6. Power Dissipation vs
Ambient Temperature
80
70
60
50
40
30
20
10
1.5
1.0
0.5
0.0
f=1mhz
0
25
50
75
100
125
150
0
20
40
60
80
100
Case Temperature, TC[oC]
Reverse Voltage, VR[V]
2
www.fairchildsemi.com
NZT902 Rev. B
Typical Performance Characteristics
Figure 9. SOA
10
Icmax
1
0.1
0.01
Vceo(Max)
1E-3
0.1
1
10
100
Collector-Emmiter Voltage, Vce[V]
3
www.fairchildsemi.com
NZT902 Rev. B
Mechanical Dimensions
SOT-223
3.00 0.10
MAX1.80
+0.04
–0.02
0.06
2.30 TYP
4.60 0.25
0.70 0.10
(0.95)
°
~10
°
0
+0.10
–0.05
(0.95)
0.25
6.50 0.20
Dimensions in Millimeters
4
www.fairchildsemi.com
NZT902 Rev. B
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IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
5
www.fairchildsemi.com
NZT902 Rev. B
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