PN4392 [FAIRCHILD]
N-Channel Switch; N沟道开关
| 型号： | PN4392 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Switch |
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
MMBF4391
MMBF4392
MMBF4393
PN4391
PN4392
PN4393
G
D
TO-92
G
S
S
SOT-23
Mark: 6J / 6K / 6G
D
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabalized amplifiers. Sourced
from Process 51. See J111 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
30
- 30
V
V
VGS
IGF
50
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ ,Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN4391
*MMBF4391
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
350
2.8
125
225
1.8
mW
mW/°C
°C/W
Rθ
JC
Rθ
Thermal Resistance, Junction to Ambient
357
556
°C/W
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
N-Channel Switch
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)GSS
IGSS
Gate-Source Breakdown Voltage
- 30
V
IG = 1.0 µA, VDS = 0
Gate Reverse Current
VGS = 15 V, VDS = 0
VGS = 15 V, VDS = 0, TA = 150°C
VDS = 20 V, ID = 1.0 nA
- 1.0
- 0.2
- 10
- 5.0
- 3.0
1.0
nA
µA
V
V
V
VGS(off)
Gate-Source Cutoff Voltage
PN4391
PN4392
PN4393
- 4.0
- 2.0
- 0.5
VGS(f)
ID(off)
Gate-Source Forward Voltage
Drain Cutoff Leakage Current
IG = 1.0 mA, VDS = 0
V
VDS = 20 V, VGS = 12 V
PN4391
0.1
0.1
0.1
nA
nA
nA
VDS = 20 V, VGS = 7.0 V PN4392
VDS = 20 V, VGS = 5.0 V PN4393
VDS = 20 V, VGS = 12 V, TA = 150°C
PN4391
VDS = 20 V, VGS = 7.0 V,TA = 150°C
PN4392
0.2
0.2
0.2
µA
A
µ
VDS = 20 V, VGS = 5.0 V,TA = 150°C
PN4393
µA
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 20 V, VGS = 0
PN4391
PN4392
PN4393
PN4391
PN4392
PN4393
PN4391
PN4392
PN4393
50
25
5.0
150
75
30
0.4
0.4
0.4
30
mA
mA
mA
V
V
V
Ω
Ω
Ω
Drain-Source On Voltage
ID = 12 mA, VGS = 0
ID = 6.0 mA, VGS = 0
ID = 3.0 mA, VGS = 0
ID = 1.0 mA, VGS = 0
VDS(on)
Drain-Source On Resistance
rDS(on)
60
100
SMALL-SIGNAL CHARACTERISTICS
Drain-Source On Resistance
VDS = VGS = 0, f= 1.0 kHz PN4391
PN4392
30
60
Ω
Ω
rds(on)
PN4393
100
Ω
Input Capacitance
VDS = 20, VGS = 0, f = 1.0 MHz
14
pF
Ciss
Crss
Reverse Transfer Capacitance
VGS = 12 V, f = 1.0 MHz PN4391
VGS = 7.0 V, f = 1.0 MHz PN4392
VGS = 5.0 V, f = 1.0 MHz PN4393
3.5
3.5
3.5
pF
pF
pF
SWITCHING CHARACTERISTICS
Rise Time
5.0
5.0
5.0
ns
ns
ns
tr
ID(on) = 12 mA
ID(on) = 6.0 mA
ID(on) = 3.0 mA
PN4391
PN4392
PN4393
PN4391
PN4392
PN4393
PN4391
PN4392
PN4393
PN4391
PN4392
PN4393
Fall Time
15
20
30
ns
ns
ns
tf
V
V
V
GS(off) = 12 V
GS(off) = 6.0 V
GS(off) = 3.0 V
Turn-On Time
Turn-Off Time
15
15
15
ns
ns
ns
ton
I
I
I
D(on) = 12 mA
D(on) = 6.0 mA
D(on) = 3.0 mA
20
35
50
ns
ns
ns
toff
V
V
V
GS(off) = 12 V
GS(off) = 6.0 V
GS(off) = 3.0 V
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
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