QED123UL [FAIRCHILD]

PLASTIC INFRARED LIGHT EMITTING DIODE; 塑料红外发光二极管
QED123UL
型号: QED123UL
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

PLASTIC INFRARED LIGHT EMITTING DIODE
塑料红外发光二极管

半导体 红外LED 光电 二极管
文件: 总4页 (文件大小:493K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QED123UL  
PACKAGE DIMENSIONS  
0.195 (4.95)  
REFERENCE  
SURFACE  
0.305 (7.75)  
0.040 (1.02)  
NOM  
0.800 (20.3)  
MIN  
0.050 (1.25)  
CATHODE  
0.100 (2.54)  
NOM  
SCHEMATIC  
0.240 (6.10)  
0.215 (5.45)  
0.020 (0.51)  
SQ. (2X)  
ANODE  
NOTES:  
CATHODE  
1. Dimensions for all drawings are in inches (mm).  
2. Tolerance of .010 (.25) on all non-nominal dimensions  
unless otherwise specified.  
FEATURES  
UL217 Approved  
λ = 880 nm  
Chip material = AlGaAs  
Package type: T-1 3/4 (5mm lens diameter)  
Matched Photosensor: QSB34  
Narrow Emission Angle, 18°  
High Output Power  
Package material and color: Clear, peach  
© 2004 Fairchild Semiconductor Corporation  
Page 1 of 4  
4/2/04  
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QED123UL  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)  
A
Parameter  
Symbol  
Rating  
Unit  
Operating Temperature  
Storage Temperature  
T
-40 to + 100  
-40 to + 100  
240 for 5 sec  
260 for 10 sec  
100  
°C  
°C  
OPR  
T
STG  
(2,3,4)  
(2,3)  
Soldering Temperature (Iron)  
T
°C  
SOL-I  
Soldering Temperature (Flow)  
Continuous Forward Current  
Reverse Voltage  
T
°C  
SOL-F  
I
mA  
V
F
V
P
5
R
D
(1)  
Power Dissipation  
200  
mW  
NOTES:  
1. Derate power dissipation linearly 2.67 mW/°C above 25°C.  
2. RMA flux is recommended.  
3. Methanol or isopropyl alcohols are recommended as cleaning agents.  
4. Soldering iron 1/16" (1.6 mm) minimum from housing  
.
ELECTRICAL / OPTICAL CHARACTERISTICS (T =25°C)  
A
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Units  
Peak Emission Wavelength  
Emission Angle  
I = 20 mA  
λ
16  
880  
18  
nm  
Deg.  
V
F
PE  
1
I = 100 mA  
/  
F
2
Forward Voltage  
Reverse Current  
Radiant Intensity QED121  
Rise Time  
I = 100 mA, tp = 20 ms  
V
1.7  
10  
40  
F
F
V = 5 V  
I
µA  
R
R
I = 100 mA, tp = 20 ms  
I
mW/sr  
ns  
F
E
t
800  
800  
r
I = 100 mA  
F
Fall Time  
t
ns  
f
© 2004 Fairchild Semiconductor Corporation  
Page 2 of 4  
4/2/04  
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QED123UL  
Typical Performance Characteristics  
10  
1
Normalized to:  
Normalized to:  
Pulse Width = 100 µs  
Duty Cycle = 0.1%  
I = 100 mA, T = 25˚C  
Pulse Width = 100 µs  
F
A
I
= 100 mA  
F
0.8  
0.6  
0.4  
0.2  
0
1
0.1  
V
= 5 V  
= 100Ω  
= 25˚C  
CC  
R
L
T
A
I
= 20 mA  
F
0.01  
0.001  
1
10  
100  
1000  
0
1
2
3
4
5
6
I
- INPUT CURRENT (mA)  
LENS TIP SEPERATION (INCHES)  
Fig. 2 Coupling Characteristics of QED12X and QSD12X  
F
Fig. 1 Normalized Radiant Intensity vs. Input Current  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
2.5  
2
I
= 100 mA  
F
I
= 50 mA  
F
1.5  
1
I
= 10 mA  
I
= 20 mA  
F
F
0.5  
0
Pulse Width = 100 µs  
Duty Cycle = 0.1%  
775  
800  
825  
850  
875  
900  
925  
950  
-40 -30 -20 -10  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
T
- TEMPERATURE (˚C)  
A
λ (nm)  
Fig. 4 Normalized Radiant Intensity vs. Wavelength  
Fig. 3 Forward Voltage vs.Temperature  
Fig. 5 Radiation Pattern  
0˚  
10  
-10  
20  
-20  
30  
-30  
40  
-40  
50  
60  
-50  
-60  
-70  
70  
80  
-80  
90  
-90  
100  
80  
60  
40  
20  
0
20  
40  
60  
80  
100  
© 2004 Fairchild Semiconductor Corporation  
Page 3 of 4  
4/2/04  
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QED123UL  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO  
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME  
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body, or  
(b) support or sustain life, and (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in a significant injury of the user.  
2. A critical component in any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
© 2004 Fairchild Semiconductor Corporation  
Page 4 of 4  
4/2/04  

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