QSD733 [FAIRCHILD]

PLASTIC SILICON INFRARED PHOTODARLINGTON; 塑封硅红外PHOTODARLINGTON


型号：	QSD733
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	PLASTIC SILICON INFRARED PHOTODARLINGTON 塑封硅红外PHOTODARLINGTON 晶体光电晶体管光电晶体管 LTE
文件：	总4页 (文件大小：52K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PLASTIC SILICON

INFRARED PHOTODARLINGTON

QSD733

PACKAGE DIMENSIONS

0.190 (4.83)

0.178 (4.52)

45°

0.235 (5.97)

0.218 (5.54)

REFERENCE

SURFACE

0.030 (0.76)

0.800 (20.3)

MIN

EMITTER

0.050 (1.27)

COLLECTOR

0.100 (2.54) NOM

0.215 (5.46) NOM

SCHEMATIC

0.020 (0.51)

SQ 2PLCS

COLLECTOR

45°

0.020 (0.51) RADIUS

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions

unless otherwise specified.

EMITTER

3. Orange stripe on the flange.

DESCRIPTION

The QSD733 is a silicon phototdarlington encapsulated in an infrared transparent, black TO-18 package.

FEATURES

• NPN Silicon Photodarlington

• Package Type: Plastic TO-18

• Matched Emitter: QED523

• Narrow Reception Angle, 40°

• Daylight Filter

• Package material and color: black epoxy

• High Sensitivity

2001 Fairchild Semiconductor Corporation

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PLASTIC SILICON

INFRARED PHOTODARLINGTON

QSD733

(T = 25°C unless otherwise specified)

ABSOLUTE MAXIMUM RATINGS

Parameter

Operating Temperature

Symbol

T_OPR

T_STG

T_SOL-I

T_SOL-F

V_CE

Rating

-40 to +100

240 for 5 sec

260 for 10 sec

Unit

°C

Storage Temperature

Soldering Temperature (Iron)^(2,3,4)

Soldering Temperature (Flow)^(2,3)

Collector-Emitter Voltage

Emitter-Collector Voltage

Power Dissipation⁽¹⁾

V_EC

P_D

100

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16” (1.6mm) minimum from housing.

5. ! = 880 nm, AlGaAs.

(TA =25°C)

ELECTRICAL / OPTICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

SYMBOL

MIN

—

TYP

880

±20

—

MAX

—

UNITS

Deg.

Peak Sensitivity Wavelength

Reception Angle

I_CEO

—

Collector-Emitter Dark Current

Collector-Emitter Breakdown

Emitter-Collector Breakdown

On-State Collector Current⁽⁵⁾

Saturation Voltage⁽⁵⁾

Rise Time

V_CE= 10 V, Ee = 0

I_C= 1 mA

100

—

BV_CEO

BV_ECO

I^C(ON)

V_CE(sat)

t_r

—

I_E= 100 µA

Ee = 0.125 mW/cm², V_CE= 5 V

Ee = 0.125 mW/cm², I_C= 2.0 mA

—

5.0

—

1.0

—

V_CC= 5 V, R_L= 100 Ω, I_C= 0.15 mA

µs

Fall Time

t_f

—

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PLASTIC SILICON

INFRARED PHOTODARLINGTON

QSD733

Figure 1. Light Current vs. Radiant Intensity

= 5V

10³

10²

10¹

Figure 2. Angular Response Curve

100

GaAs Light Source

110

120

130

140

150

160

170

180

1.0

0.4

0.2

0.0

0.2

0.4

0.6

0.8

0.6

0.1

E_e- Radiant Intensity (mW/cm )

Figure 3. Dark Current vs. Collector - Emitter Voltage

Figure 4. Light Current vs. Collector - Emitter Voltage

10¹

10⁰

10¹

I =0.2mW/cm

I =0.15mW/cm

10⁰

I =0.125mW/cm

I =0.1mW/cm

10^-1

10^-2

10^-3

10^-1

10^-2

10^-3

Normalized to:

= 5V

= 0.125mW/cm

= 25 C

0.1

V_CE- Collector-Emitter Voltage (V)

Figure 5. Dark Current vs. Ambient Temperature

10⁵

Normalized to:

= 25V

10⁴

10³

10²

10¹

10⁰

10^-1

= 25 C

=25V

=10V

100

^oC

)

T_A- Ambient Temperature (

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PLASTIC SILICON

INFRARED PHOTODARLINGTON

QSD733

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO

ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF

OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD

SEMICONDUCTOR CORPORATION. As used herein:

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical

implant into the body,or (b) support or sustain life,

and (c) whose failure to perform when properly

used in accordance with instructions for use provided

in labeling, can be reasonably expected to result in a

significant injury of the user.

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