QSE213 [FAIRCHILD]
PLASTIC SILICON INFRARED PHOTOTRANSISTOR; 塑封硅红外光敏晶体管
| 型号： | QSE213 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| 文件： | 总4页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE213
QSE214
PACKAGE DIMENSIONS
0.060 (1.50)
0.174 (4.44)
R 0.030 (0.76)
0.047 (1.20)
0.177 (4.51)
0.224 (5.71)
0.030 (0.76)
0.5 (12.7)
MIN
EMITTER
0.060 (1.52)
SCHEMATIC
0.020 (0.51)
SQ. (2X)
0.100 (2.54)
Collector
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all nonꢀnominal dimensions ꢁnless
otherwise specified.
Emitter
DESCRIPTION
The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic side-
looker package.
FEATURES
•
•
•
•
•
•
NPN Silicon Phototransistor
Package Type: Sidelooker
Medium Reception Angle, 50°
Daylight Filter
Black Epoxy Package
Matching Emitter: QEE213
© 2002 Fairchild Semiconductor Corporation
Page 1 of 4
7/23/02
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE213
QSE214
ABSOLUTE MAXIMUM RATINGS (T = 25°C ꢁnless otherwise specified)
A
Parameter
Symbol
Rating
ꢀ40 to +100
ꢀ40 to +100
240 for 5 sec
260 for 10 sec
30
Unit
°C
°C
°C
°C
V
T
Operating Temperatꢁre
Storage Temperatꢁre
OPR
T
STG
(2,3,4)
(2,3)
T
Soldering Temperatꢁre (Iron)
SOLꢀI
T
Soldering Temperatꢁre (Flow)
CollectorꢀEmitter Voltage
EmitterꢀCollector Voltage
SOLꢀF
V
CE
V
5
V
EC
(1)
P
100
mW
Power Dissipation
D
ELECTRICAL / OPTICAL CHARACTERISTICS (T =25°C ꢁnless otherwise specified)
A
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
λ
Peak Sensitivity
—
—
—
30
880
25
—
—
—
nM
Deg.
nA
V
PS
Reception Angle
Θ
V
= 10 V, E = 0
I
Collector Emitter Dark Cꢁrrent
Collector Emitter Breakdown
Emitter Collector Breakdown
100
—
CE
e
D
I = 1 mA
BV
—
C
CEO
I = 100 µA
BV
5
—
—
—
—
1.50
—
V
E
ECO
(QSE213)
(QSE214)
0.2
1.00
2
I
OnꢀState Collector Cꢁrrent
mA
E = 0.5 mW/cm , V = 5 V
C(ON)
e
CE
(5)
V
= 5 V
CE
2
V
—
—
0.4
V
E = 0.5 mW/cm ,
Satꢁration Voltage
CE(SAT)
e
(5)
I = 0.1 mA
C
t
Rise Time
Fall Time
—
—
8
8
—
—
r
V
= 5V, R = 100Ω, I = 1mA
L C
µs
CC
t
f
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flꢁx is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimꢁm from hoꢁsing.
5. λ = 950 nm GaAs.
© 2002 Fairchild Semicondꢁctor Corporation
Page 2 of 4
7/23/02
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE213
QSE214
TYPICAL PERFORMANCE CURVES
Fig.1 Dark Current vs. Collector Emitter Voltage
Fig.2 Radiation Diagram
101
90
100
80
100
10ꢀ1
10ꢀ2
110
70
120
60
130
50
40
140
150
160
170
30
20
10
0
10ꢀ3
180
1.0
0.8
0.6
0.4
0.2
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
VCE ꢀ COLLECTOR EMITTER VOLTAGE (V)
Fig.3 Light Current vs. Ambient Temperature
Fig.4 Light Current vs. Collector to Emitter Voltage
10
10
Normalized to:
2
= 1 mW/cm
I
V
= 5 V
e
CE
= 0.5 mW/cm
2
I
e
1
0.1
T
= 25˚C
A
2
2
I
I
= 0.5 mW/cm
= 0.2 mW/cm
e
e
1
2
I
= 0.1 mW/cm
e
0.01
Normalized to:
= 5 V
V
CE
= 0.5 mW/cm
2
I
T
e
A
= 25˚C
0.001
0.1
0.1
1
10
ꢀ40
ꢀ20
0
20
40
60
80
100
T
A ꢀ AMBIENT TEMPERATURE (˚C)
VCE ꢀ COLLECTOR ꢀ EMITTER VOLTAGE (V)
Fig.5 Dark Current vs. Ambient Temperature
103
Normalized to:
V
= 25 V
CE
= 25˚C
V
CE
= 25 V
2
10
T
A
V
= 10 V
CE
1
10
0
10
ꢀ1
10
40
60
80
100
TA ꢀ AMBIENT TEMPERATURE (˚C)
© 2002 Fairchild Semicondꢁctor Corporation
Page 3 of 4
7/23/02
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE213
QSE214
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As ꢁsed herein:
1. Life sꢁpport devices or systems are devices or systems
which, (a) are intended for sꢁrgical implant into the body, or
(b) sꢁpport or sꢁstain life, and (c) whose failꢁre to perform
when properly ꢁsed in accordance with instrꢁctions for ꢁse
provided in the labeling, can be reasonably expected to
resꢁlt in a significant injꢁry of the ꢁser.
2. A critical component in any component of a life sꢁpport
device or system whose failꢁre to perform can be
reasonably expected to caꢁse the failꢁre of the life sꢁpport
device or system, or to affect its safety or effectiveness.
© 2002 Fairchild Semicondꢁctor Corporation
Page 4 of 4
7/23/02
相关型号：
©2020 ICPDF网 联系我们和版权申明