RC5057M [FAIRCHILD]

High Performance Programmable Synchronous DC-DC Controller for Low Voltage Microprocessors; 高性能可编程同步DC -DC控制器,用于低电压微处理器
RC5057M
型号: RC5057M
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

High Performance Programmable Synchronous DC-DC Controller for Low Voltage Microprocessors
高性能可编程同步DC -DC控制器,用于低电压微处理器

稳压器 开关式稳压器或控制器 电源电路 开关式控制器 微处理器 光电二极管
文件: 总20页 (文件大小:177K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
www.fairchildsemi.com  
RC5057  
High Performance Programmable Synchronous  
DC-DC Controller for Low Voltage Microprocessors  
Features  
Description  
• Programmable output from 1.3V to 3.5V using an  
integrated 5-bit DAC  
• Remote sense  
The RC5057 is a synchronous mode DC-DC controller IC  
which provides a highly accurate, programmable output voltage  
for all Pentium II & III CPU applications and other high-perfor-  
mance processors. The RC5057 features remote voltage  
sensing, adjustable current limit, and active droop for optimal  
converter transient response. The RC5057 uses a 5-bit D/A  
converter to program the output voltage from 1.3V to 3.5V.  
The RC5057 uses a high level of integration to deliver load cur-  
rents in excess of 16A from a 5V source with minimal exter-  
nal circuitry. Synchronous-mode operation offers optimum  
efficiency over the entire specified output voltage range. An  
on-board precision low TC reference achieves tight tolerance  
voltage regulation without expensive external components,  
while active droop permits exact tailoring of voltage for the  
most demanding load transients. The RC5057 also offers  
integrated functions including Power Good, Output Enable/  
Soft Start and current limiting, and is available in a 16 pin  
SOIC package.  
• Active Droop  
• 85% efficiency typical at full load  
• Integrated Power Good and Enable/Soft Start functions  
• Drives N-channel MOSFETs  
• Overcurrent protection using MOSFET sensing  
• 16 pin SOIC package  
• Meets Intel Pentium II & III specifications using  
minimum number of external components  
Applications  
• Power supply for Pentium® II & III  
• VRM for Pentium II & III processor  
• Telecom line cards  
• Routers, switches & hubs  
• Programmable step-down power supply  
Block Diagram  
+5V  
+12V  
VCCA  
5
+5V  
RS  
3
-
+
10  
OSC  
4
-
+
VCCP  
HIDRV  
8
9
Digital  
VO  
Control  
-
+
-
+
LODRV  
7
6
GNDP  
1.24V  
5-Bit  
Power  
Good  
2
PWRGD  
Reference  
DAC  
1615141312  
11  
1
VID2 VID4  
VID3  
VID0  
GNDA  
ENABLE/SS  
VID1  
Pentium is a registered trademark of Intel Corporation  
Rev. 1.2.0  
RC5057  
PRODUCT SPECIFICATION  
Pin Assignments  
ENABLE/SS  
PWRGD  
IFB  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
VID0  
VID1  
VID2  
VID3  
VID4  
GNDA  
SW  
VFB  
RC5057  
VCCA  
GNDP  
LODRV  
VCCP  
HIDRV  
Pin Definitions  
Pin Number  
Pin Name  
Pin Function Description  
1
ENABLE/SS  
Output Enable/Softstart. A logic LOW on this pin will disable the output. An  
internal current source allows for open collector control. This pin also doubles as  
soft start.  
2
3
PWRGD  
IFB  
Power Good Flag. An open collector output that will be logic LOW if the output  
voltage is not within 12ꢀ of the nominal output voltage setpoint.  
Current Feedback. Pin 3 is used in conjunction with pin 10, as the input for the  
current feedback control loop. Layout of these traces is critical to system  
performance. See Application Information for details.  
4
5
6
7
VFB  
VCCA  
GNDP  
LODRV  
Voltage Feedback. Pin 4 is used as the input for the voltage feedback control  
loop. See Application Information for details regarding correct layout.  
Analog VCC. Connect to system 5V supply and decouple with a 0.1µF ceramic  
capacitor.  
Power Ground. Return pin for high currents flowing in pin 8 (VCCP). Connect to  
a low impedance ground.  
Low Side FET Driver. Connect this pin to the gate of an N-channel MOSFET for  
synchronous operation. The trace from this pin to the MOSFET gate should be  
<0.5".  
8
9
VCCP  
HIDRV  
SW  
Power VCC. For both high side and low side FET drivers. Connect to system 12V  
supply, and decouple with a 4.7µF tantalum and a 0.1µF ceramic capacitor.  
High Side FET Driver. Connect this pin to the gate of an N-channel MOSFET.  
The trace from this pin to the MOSFET gate should be <0.5".  
10  
High side driver source and low side driver drain switching node. Together  
with IFB pin allows FET sensing for current.  
11  
GNDA  
VID0-4  
Analog Ground. Return path for low power analog circuitry. This pin should be  
connected to a low impedance system ground plane to minimize ground loops.  
12–16  
Voltage Identification Code Inputs. These open collector/TTL compatible inputs  
will program the output voltage over the ranges specified in Table 2. Pull-up  
resistors are internal to the controller.  
2
REV. 1.2.0 2/10/00  
PRODUCT SPECIFICATION  
RC5057  
Absolute Maximum Ratings  
Supply Voltage VCCA to GND  
Supply Voltage VCCP to GND  
Voltage Identification Code Inputs, VID0-VID4  
Junction Temperature, TJ  
13.5V  
15V  
VCCA  
150°C  
Storage Temperature  
-65 to 150°C  
300°C  
Lead Soldering Temperature, 10 seconds  
Power Dissipation, PD  
750mW  
105°C/W  
Thermal Resistance Junction-to-case, ΘJC  
Recommended Operating Conditions  
Parameter  
Conditions  
Min.  
4.5  
Typ.  
Max.  
Units  
Supply Voltage VCCA  
Input Logic HIGH  
5
5.25  
V
V
2.0  
Input Logic LOW  
0.8  
70  
V
Ambient Operating Temperature  
Output Driver Supply, VCCP  
0
°C  
V
11.4  
12  
13.2  
REV. 1.2.0 2/10/00  
3
RC5057  
PRODUCT SPECIFICATION  
Electrical Specications (V  
= 5V, V  
= 12V, V  
= 2.0V, and T = +25°C using circuit in Figure 1,  
CCA  
CCP  
OUT  
A
unless otherwise noted.)  
The • denotes specifications which apply over the full operating temperature range.  
Parameter Conditions  
Output Voltage  
Min.  
Typ.  
Max. Units  
See Table 1  
1.3  
3.5  
V
A
Output Current  
18  
Initial Voltage Setpoint  
ILOAD = 0.8A, VOUT = 2.400V  
OUT = 2.000V  
2.394 2.424 2.454  
2.000 2.020 2.040  
1.550 1.565 1.580  
V
V
V
V
VOUT = 1.550V  
Output Temperature Drift  
TA = 0 to 70°C, VOUT = 2.000V  
+8  
+6  
mV  
mV  
VOUT = 1.550V  
Line Regulation  
Internal Droop3  
Output Ripple  
VCCA = 4.75V to 5.25V, VOUT = 2.000V  
VOUT at ILOAD = 0.8A to Imax  
20MHz BW, ILOAD = Imax  
VOUT = 2.000V  
2
mV  
mV  
-44  
-40  
11  
-36  
mVpk  
V
Total Output Variation,  
Steady State1  
1.940  
1.480  
2.070  
1.590  
V
OUT = 1.550V3  
Total Output Variation,  
Transient2  
ILOAD = 0.8A to Imax,VOUT = 2.000V  
OUT = 1.550V3  
1.900  
1.480  
2.100  
1.590  
V
V
Short Circuit Detect Current  
Efficiency  
45  
60  
µA  
%
ILOAD = Imax, VOUT = 2.0V  
85  
50  
Output Driver Rise & Fall Time See Figure 4 for tR and tF  
nsec  
nsec  
kHz  
%
Output Driver Deadtime  
Oscillator Frequency  
Duty Cycle  
See Figure 7 for tDT  
50  
255  
0
300  
345  
100  
PWRGD Threshold  
Logic HIGH  
Logic LOW  
93  
88  
107  
112  
%Vout  
VCCA UVLO  
3.74  
7.65  
4
4.26  
9.35  
V
VCCP UVLO  
8.5  
19  
40  
10  
V
VCCA Supply Current  
VCCP Supply Current4  
Soft Start Current  
mA  
mA  
µA  
5
17  
Notes:  
1. Steady State Voltage Regulation includes Initial Voltage Setpoint, Droop, Output Ripple and Output Temperature Drift and is  
measured at the converters VFB sense point.  
2. As measured at the converters VFB sense point. For motherboard applications, the PCB layout should exhibit no more than  
0.5mtrace resistance between the converters output capacitors and the CPU. Remote sensing should be used for optimal  
performance.  
3. Using the VFB pin for remote sensing of the converters output at the load, the converter will be in compliance with Intels  
VRM 8.4 specification of +50, -80mV. If Intel specifications on maximum plane resistance from the converters output capac-  
itors to the CPU are met, the specification of +40, -70mV at the capacitors will also be met.  
4. Includes gate current.  
4
REV. 1.2.0 2/10/00  
PRODUCT SPECIFICATION  
RC5057  
Table 1. Output Voltage Programming Codes  
VID4  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
VID3  
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
VID2  
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
VID1  
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
VID0  
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
Nominal VOUT  
1.30V  
1.35V  
1.40V  
1.45V  
1.50V  
1.55V  
1.60V  
1.65V  
1.70V  
1.75V  
1.80V  
1.85V  
1.90V  
1.95V  
2.00V  
2.05V  
2.0V  
2.1V  
2.2V  
2.3V  
2.4V  
2.5V  
2.6V  
2.7V  
2.8V  
2.9V  
3.0V  
3.1V  
3.2V  
3.3V  
3.4V  
3.5V  
Note:  
1. 0 = processor pin is tied to GND.  
1 = processor pin is open.  
REV. 1.2.0 2/10/00  
5
RC5057  
PRODUCT SPECIFICATION  
Typical Operating Characteristics (VCCA = 5V, VCCP = 12V, and TA = +25°C using circuit in Figure  
1, unless otherwise noted.)  
Efficiency vs. Output Current  
Droop, V  
OUT = 2.0V  
2.04  
2.03  
2.02  
2.01  
2.00  
1.99  
1.98  
1.97  
1.96  
1.95  
1.94  
88  
86  
84  
82  
80  
78  
76  
74  
72  
70  
68  
66  
64  
VOUT = 2.000V  
VOUT = 1.550V  
0
3
6
9
12  
15  
18  
Output Current (A)  
0
3
6
9
12  
15  
18  
Output Current (A)  
Output Voltage vs. Output Current  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0
5
10  
15  
20  
25  
Output Current (A)  
Output Programming, VID4 = 1  
Output Programming, VID4 = 0  
2.1  
3.5  
1.9  
1.7  
1.5  
1.3  
1.1  
3.0  
2.5  
2.0  
1.5  
1.0  
1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00  
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5  
DAC Setpoint  
DAC Setpoint  
6
REV. 1.2.0 2/10/00  
PRODUCT SPECIFICATION  
RC5057  
Typical Operating Characteristics (continued)  
Output Ripple, 2.0V @ 18A  
Transient Response, 12.5A to 0.5A  
1.590V  
1.550V  
1.480V  
Time (100µs/div)  
Time (1µs/division)  
Transient Response, 0.5A to 12.5A  
1.590V  
1.550V  
1.480V  
Time (100µs/div)  
Switching Waveforms, 18A Load  
Output Startup, System Power-up  
HIDRV  
pin  
LODRV  
pin  
Time (1µs/division)  
Time (10ms/division)  
REV. 1.2.0 2/10/00  
7
RC5057  
PRODUCT SPECIFICATION  
Typical Operating Characteristics (continued)  
VOUT Temperature Variation  
Output Startup from Enable  
2.042  
2.040  
2.038  
2.036  
2.034  
2.030  
2.028  
2.026  
0
25  
70  
100  
Time (10ms/division)  
Temperature (°C)  
Application Circuit  
+12V  
L1 (Optional)  
2.5µH  
+5V  
R1  
33Ω  
CIN  
*
C2  
1µF  
C5  
1µF  
R6  
R2  
10Ω  
4.7Ω  
L2  
1.3µH  
Q1  
Q2  
C1  
4.7µF  
VO  
R3  
D1  
MBRD835L  
4.7Ω  
COUT  
*
9
8
7
6
5
4
3
2
1
10  
11  
12  
13  
14  
15  
16  
C3  
0.1µF  
U1  
RC5057  
VID4  
VID3  
VID2  
VID1  
R5*  
VID0  
VCC  
ENABLE/SS  
*Refer to Appendix for values  
of COUT, R5, and CIN  
R4  
10KΩ  
.
C4  
0.1µF  
PWRGD  
C6  
0.1µF  
Figure 1. Typical Application Circuit  
(Worst Case Analyzed! See Appendix for Details)  
8
REV. 1.2.0 2/10/00  
PRODUCT SPECIFICATION  
RC5057  
Table 2. RC5057 Application Bill of Materials  
(Components based on Worst Case AnalysisSee Appendix for Details)  
Reference Manufacturer Part # Quantity  
Description  
Requirements/Comments  
C1  
AVX  
TAJB475M010R5  
1
4.7µF, 10V Capacitor  
C2, C5  
C3-4,6  
CIN  
Panasonic  
ECU-V1C105ZFX  
2
1µF, 16V Capacitor  
Panasonic  
ECU-V1H104ZFX  
3
100nF, 50V Capacitor  
Sanyo  
10MV1200GX  
*
1200µF, 10V Electrolytic IRMS = 2A  
1500µF, 6.3V Electrolytic ESR 44mΩ  
8A Schottky Diode  
COUT  
D1  
Sanyo  
6MV1500GX  
*
1
Motorola  
MBRD835L  
L1  
Any  
Any  
Optional  
2.5µH, 10A Inductor  
DCR ~ 6mΩ  
See Note 1.  
L2  
1
1
1.3µH, 20A Inductor  
DCR ~ 2mΩ  
Q1  
Fairchild  
FDP6030L or  
FDB6030L  
N-Channel MOSFET  
(TO-220 or TO-263)  
RDS(ON) = 20m@ VGS = 4.5V  
See Note 2.  
Q2  
Fairchild  
FDP7030BL or  
FDB7030BL  
1
N-Channel MOSFET  
(TO-220 or TO-263)  
R
DS(ON) = 10m@ VGS = 4.5V  
See Note 2.  
R1  
Any  
Any  
Any  
Any  
Any  
1
2
1
1
1
1
33Ω  
R2-3  
R4  
4.7Ω  
10KΩ  
R5  
*
R6  
10Ω  
U1  
Fairchild  
DC/DC Controller  
RC5057M  
*See Appendix.  
Notes:  
1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply  
with Intel dI/dt requirements. L1 may be omitted if desired.  
2. For designs using the TO-220 MOSFETs, heatsinks with thermal resistance Θ < 20°C/W should be used. For designs using  
SA  
the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET selections, refer  
to Applications Bulletin AB-8.  
REV. 1.2.0 2/10/00  
9
RC5057  
PRODUCT SPECIFICATION  
+12V  
+5V  
L1 (Optional)  
R1  
33Ω  
2.5µH  
CIN  
*
D2  
1N4148  
C2  
1µF  
C5  
1µF  
R6  
10Ω  
R2  
4.7Ω  
Q1  
C1  
4.7µF  
L2  
1.3µH  
R10  
10mΩ  
R7  
2.2mΩ  
VO  
R3  
D1  
MBRD835L  
4.7Ω  
COUT  
*
Q2  
9
8
10  
11  
12  
13  
14  
15  
16  
7
6
5
4
3
2
1
C3  
0.1µF  
U1  
RC5057  
R8  
2.1Ω  
VID4  
VID3  
VID2  
VID1  
R5  
2.80KΩ  
R9  
1KΩ  
VID0  
VCC  
ENABLE/SS  
*Refer to Table 4 for values  
of COUT, and CIN  
R4  
10KΩ  
.
C4  
0.1µF  
PWRGD  
C6  
0.1µF  
Figure 2. Application Circuit for Coppermine/Camino Processors  
(Worst Case Analyzed! See Appendix for Details)  
10  
REV. 1.2.0 2/10/00  
PRODUCT SPECIFICATION  
RC5057  
Table 3. RC5057 Application Bill of Materials for Coppermine/Camino Processors  
(Components based on Worst Case AnalysisSee Appendix for Details)  
Reference  
Manufacturer Part #  
AVX  
Quantity  
Description  
Requirements/Comments  
C1  
1
4.7µF, 10V Capacitor  
TAJB475M010R5  
C2, C5  
C3-4,6  
CIN  
Panasonic  
ECU-V1C105ZFX  
2
3
1µF, 16V Capacitor  
Panasonic  
ECU-V1H104ZFX  
100nF, 50V Capacitor  
Sanyo  
10MV1200GX  
3
1200µF, 10V  
Electrolytic  
IRMS = 2A  
COUT  
D1  
Sanyo  
6MV1500GX  
10  
1
1500µF, 6.3V  
Electrolytic  
ESR 44mΩ  
Motorola  
MBRD835L  
8A Schottky Diode  
D2  
Fairchild  
1N4148  
1
Signal Diode  
L1  
L2  
Q1  
Any  
Any  
Optional  
2.5µH, 10A Inductor  
1.3µH, 20A Inductor  
DCR ~ 6mSee Note 1.  
DCR ~ 2mΩ  
1
1
Fairchild  
FDP6030L or FDB6030L  
N-Channel MOSFET RDS(ON) = 20m@ VGS = 4.5V  
(TO-220 or TO-263)  
See Note 2.  
Q2  
Fairchild  
FDP7030BL or  
FDB7030BL  
1
N-Channel MOSFET  
(TO-220 or TO-263)  
RDS(ON) = 10m@ VGS = 4.5V  
See Note 2.  
R1  
Any  
Any  
Any  
Any  
Any  
N/A  
Any  
Any  
1
2
1
1
1
1
1
1
1
33Ω  
R2-3  
R4  
4.7Ω  
10KΩ  
R5  
2.80KΩ  
R6  
10Ω  
R7  
1.8mΩ  
PCB Trace Resistor  
R8  
2.1Ω  
R9  
1KΩ  
R10  
Dale  
10m, 1W Resistor  
WSL-2512-.01Ω  
U1  
Fairchild  
RC5057M  
1
DC/DC Controller  
Notes:  
1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply  
with Intel dI/dt requirements. L1 may be omitted if desired.  
2. For designs using the TO-220 MOSFETs, heatsinks with thermal resistance Θ < 20°C/W should be used. For designs using  
SA  
the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET selections, refer  
to Applications Bulletin AB-8.  
REV. 1.2.0 2/10/00  
11  
RC5057  
PRODUCT SPECIFICATION  
+12V  
+5V  
L1 (Optional)  
R1  
33Ω  
2.5µH  
CIN*  
C2  
1µF  
C5  
1µF  
R6  
R2  
10Ω  
4.7Ω  
L2  
1.3µH  
R7  
Q1  
Q2  
3mΩ  
C1  
4.7µF  
VO  
R3  
D1  
MBRD835L  
4.7Ω  
COUT  
*
9
8
7
6
5
4
3
2
1
10  
11  
12  
13  
14  
15  
16  
C3  
0.1µF  
U1  
RC5057  
VID4  
VID3  
VID2  
VID1  
R5  
6.24KΩ  
VID0  
VCC  
ENABLE/SS  
*Refer to Table 4 for values  
of COUT, and CIN  
R4  
10KΩ  
.
C4  
0.1µF  
PWRGD  
C6  
0.1µF  
Figure 3. Application Circuit for Coppermine/Camino Processors  
(Typical Design)  
12  
REV. 1.2.0 2/10/00  
PRODUCT SPECIFICATION  
RC5057  
Table 4. RC5057 Application Bill of Materials for Coppermine/Camino Processors  
(Typical Design)  
Reference Manufacturer Part # Quantity  
Description  
Requirements/Comments  
C1  
AVX  
TAJB475M010R5  
1
4.7µF, 10V Capacitor  
C2, C5  
C3-4,6  
CIN  
Panasonic  
ECU-V1C105ZFX  
2
1µF, 16V Capacitor  
Panasonic  
ECU-V1H104ZFX  
3
100nF, 50V Capacitor  
Sanyo  
10MV1200GX  
3
1200µF, 10V Electrolytic IRMS = 2A  
COUT  
D1  
Sanyo  
6MV1500GX  
8
1
1500µF, 6.3V  
Electrolytic  
ESR 44mΩ  
Motorola  
MBRD835L  
3A Schottky Diode  
2.5µH, 10A Inductor  
1.3µH, 20A Inductor  
L1  
Any  
Any  
Optional  
DCR ~ 6mΩ  
See Note 1.  
L2  
1
2
DCR ~ 2mΩ  
Q1-2  
Fairchild  
FDP6030L or  
FDB6030L  
N-Channel MOSFET  
(TO-220 or TO-263)  
RDS(ON) = 20m@ VGS = 4.5V  
See Note 2.  
R1  
R2-3  
R4  
R5  
R6  
R7  
U1  
Any  
Any  
Any  
Any  
Any  
N/A  
1
2
1
1
1
1
1
33Ω  
4.7Ω  
10KΩ  
6.24KΩ  
10Ω  
3.0mΩ  
DC/DC Controller  
PCB Trace Resistor  
Fairchild  
RC5057M  
Notes:  
1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply  
with Intel dI/dt requirements. L1 may be omitted if desired.  
2. For designs using the TO-220 MOSFETs, heatsinks with thermal resistance Θ < 20°C/W should be used. For designs using  
SA  
the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET selections, refer  
to Applications Bulletin AB-8.  
Test Parameters  
tR  
tF  
90%  
2V  
90%  
HIDRV  
2V  
10%  
tDT  
2V  
10%  
tDT  
2V  
LODRV  
Figure 4. Output Drive Timing Diagram  
REV. 1.2.0 2/10/00  
13  
RC5057  
PRODUCT SPECIFICATION  
Internal Voltage Reference  
Application Information  
The reference included in the RC5057 is a precision band-gap  
voltage reference. Its internal resistors are precisely trimmed  
to provide a near zero temperature coefficient (TC). Based on  
the reference is the output from an integrated 5-bit DAC. The  
DAC monitors the 5 voltage identification pins, VID0-4. When  
the VID4 pin is at logic HIGH, the DAC scales the reference  
voltage from 2.0V to 3.5V in 100mV increments. When VID4  
is pulled LOW, the DAC scales the reference from 1.30V to  
2.05V in 50mV increments. All VID codes are available,  
including those below 1.80V.  
The RC5057 Controller  
The RC5057 is a programmable synchronous DC-DC con-  
troller IC. When designed around the appropriate external  
components, the RC5057 can be configured to deliver more  
than 16A of output current, as appropriate for the Katmai  
and Coppermine and other processors. The RC5057 func-  
tions as a fixed frequency PWM step down regulator.  
Main Control Loop  
Refer to the RC5057 Block Diagram on page 1. The RC5057  
implements “summing mode control”, which is different  
from both classical voltage-mode and current-mode control.  
It provides superior performance to either by allowing a  
large converter bandwidth over a wide range of output loads.  
Power Good (PWRGD)  
The RC5057 Power Good function is designed in accordance  
with the Pentium II & III DC-DC converter specifications  
and provides a continuous voltage monitor on the VFB pin.  
The circuit compares the VFB signal to the VREF voltage  
and outputs an active-low interrupt signal to the CPU should  
the power supply voltage deviate more than 12ꢀ of its  
nominal setpoint. The output is guaranteed open-collector  
high when the power supply voltage is within 7ꢀ of its nomi-  
nal setpoint. The Power Good flag provides no other control  
function to the RC5057.  
The control loop of the regulator contains two main sections:  
the analog control block and the digital control block. The  
analog section consists of signal conditioning amplifiers  
feeding into a comparator which provides the input to the  
digital control block. The signal conditioning section accepts  
input from the IFB (current feedback) and VFB (voltage  
feedback) pins and sets up two controlling signal paths. The  
first, the voltage control path, amplifies the difference between  
the VFB signal and the reference voltage from the DAC and  
presents the output to one of the summing amplifier inputs.  
The second, current control path, takes the difference between  
the IFB and SW pins when the high-side MOSFET is on,  
reproducing the voltage across the MOSFET and thus the  
input current; it presents the resulting signal to another input  
of the summing amplifier. These two signals are then summed  
together. This output is then presented to a comparator look-  
ing at the oscillator ramp, which provides the main PWM  
control signal to the digital control block.  
Output Enable/Soft Start (ENABLE/SS)  
The RC5057 will accept an open collector/TTL signal for con-  
trolling the output voltage. The low state disables the output  
voltage. When disabled, the PWRGD output is in the low state.  
Even if an enable is not required in the circuit, this pin should  
have attached a capacitor (typically 100nF) to softstart the  
switching. A larger value may occasionally be required if the  
converter has a very large capacitor at its output.  
Over-Voltage Protection  
The RC5057 constantly monitors the output voltage for protec-  
tion against over-voltage conditions. If the voltage at the VFB  
pin exceeds the selected program voltage, an over-voltage  
condition is assumed and the RC5057 disables the output  
drive signal to the external high-side MOSFET. The DC-DC  
converter returns to normal operation after the fault has been  
removed. If it is desired to have an active over-voltage pro-  
tection circuit, the RC5052, which includes all the features  
of the RC5057, may be chosen instead of the RC5057.  
The digital control block takes the analog comparator input  
and the main clock signal from the oscillator to provide the  
appropriate pulses to the HIDRV and LODRV output pins.  
These two outputs control the external power MOSFETs.  
There is an additional comparator in the analog control section  
whose function is to set the point at which the RC5057 current  
limit comparator disables the output drive signals to the external  
power MOSFETs.  
Oscillator  
High Current Output Drivers  
The RC5057 oscillator section uses a fixed frequency of  
operation of 300KHz. If it is desired to adjust this frequency  
for reasons of efficiency or component size, the RC5052,  
which includes all of the features of the RC5057, may be  
chosen instead of the RC5057.  
The RC5057 contains two identical high current output drivers  
that utilize high speed bipolar transistors in a push-pull config-  
uration. The drivers’ power and ground are separated from  
the chip’s power and ground for switching noise immunity.  
The power supply pin, VCCP, is supplied from an external  
12V source through a series resistor. The resulting voltage is  
sufficient to provide the gate to source drive to the external  
Design Considerations and Component  
Selection  
MOSFETs required in order to achieve a low RDS,ON  
.
Additional information on design and component selection  
may be found in Fairchild’s Application Note 57.  
14  
REV. 1.2.0 2/10/00  
PRODUCT SPECIFICATION  
RC5057  
D
m = Maximum duty cycle for the DC/DC converter  
MOSFET Selection  
(usually 95ꢀ).  
This application requires N-channel Logic Level Enhance-  
ment Mode Field Effect Transistors. Desired characteristics  
are as follows:  
Some margin should be maintained away from both Lmin  
and Lmax. Adding margin by increasing L almost always  
adds expense since all the variables are predetermined by  
system performance except for Co, which must be increased  
to increase L. Adding margin by decreasing L can be done  
by purchasing capacitors with lower ESR. The RC5057 pro-  
vides significant cost savings for the newer CPU systems  
that typically run at high supply current.  
• Low Static Drain-Source On-Resistance,  
RDS,ON < 20mΩ (lower is better)  
• Low gate drive voltage, VGS = 4.5V rated  
• Power package with low Thermal Resistance  
• Drain-Source voltage rating > 15V.  
RC5057 Short Circuit Current Characteristics  
The on-resistance (RDS,ON) is the primary parameter for  
MOSFET selection. The on-resistance determines the power  
dissipation within the MOSFET and therefore significantly  
affects the efficiency of the DC-DC Converter. For details  
and a spreadsheet on MOSFET selection, refer to Applica-  
tions Bulletin AB-8.  
The RC5057 protects against output short circuit by turning  
off both the high-side and low-side MOSFETs and resetting  
softstart. The short circuit limit is set with the R5 resistor, as  
given by the formula  
ISC x RDS, on  
R5  
=
IDetect  
Inductor Selection  
Choosing the value of the inductor is a tradeoff between  
allowable ripple voltage and required transient response. The  
system designer can choose any value within the allowed  
minimum to maximum range in order to either minimize rip-  
ple or maximize transient performance. The first order equa-  
tion (close approximation) for minimum inductance is:  
with IDetect 50µA, ISC the desired current limit, and RDS,on  
the high-side MOSFET’s on resistance. Remember to make  
R5 large enough to include the effects of initial tolerance and  
temperature variation on the MOSFET’s RDS,on. However,  
the value of R5 should be less than 8.3K. If a greater value  
is necessary, a lower RDS,on MOSFET should be used  
instead. Alternately, use of a sense resistor in series with the  
source of the MOSFET, as shown in Figure 6, eliminates this  
source of inaccuracy in the current limit. Note the addition of  
the diode, which is necessary for proper operation of this cir-  
cuit.  
(V Vout  
)
Vout  
Vin  
ESR  
in  
Lmin  
=
x
x
Vripple  
f
where:  
Vin = Input Power Supply  
Vout = Output Voltage  
As an example, Figure 5 shows the typical characteristic of  
the DC-DC converter circuit with an FDB6030L high-side  
MOSFET (RDS = 20mmaximum at 25°C * 1.25 at 75°C =  
25m) and a 8.2KR5.  
f = DC/DC converter switching frequency  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
ESR = Equivalent series resistance of all output capacitors in  
parallel  
Vripple = Maximum peak to peak output ripple voltage budget.  
The first order equation for maximum allowed inductance is:  
(V Vout) Dm Vtb  
in  
2C0  
=
Lmax  
2
Ipp  
0
5
10  
15  
20  
25  
Output Current (A)  
where:  
Figure 5. RC5057 Short Circuit Characteristic  
Co = The total output capacitance  
The converter exhibits a normal load regulation characteristic  
until the voltage across the MOSFET exceeds the internal  
short circuit threshold of 50µA * 8.2K= 410mV, which  
occurs at 410mV/25m= 16.4A. (Note that this current limit  
level can be as high as 410mV/15m= 27A, if the MOSFET  
Ipp = Maximum to minimum load transient current  
Vtb = The output voltage tolerance budget allocated to load  
transient  
REV. 1.2.0 2/10/00  
15  
RC5057  
PRODUCT SPECIFICATION  
has typical RDS,on rather than maximum, and is at 25°C. This  
is the reason for using the external sense resistor.) At this point,  
the internal comparator trips and signals the controller to  
discharge the softstart capacitor. This causes a drastic reduc-  
tion in the output voltage as the load regulation collapses  
into the short circuit control mode. With a 40moutput  
short, the voltage is reduced to 16.4A * 40m= 650mV. The  
output voltage does not return to its nominal value until the  
output current is reduced to a value within the safe operating  
range for the DC-DC converter.  
The output capacitance should also include a number of small  
value ceramic capacitors placed as close as possible to the  
processor; 0.1µF and 0.01µF are recommended values.  
Input Filter  
The DC-DC converter design may include an input inductor  
between the system +5V supply and the converter input as  
shown in Figure 7. This inductor serves to isolate the +5V  
supply from the noise in the switching portion of the DC-DC  
converter, and to limit the inrush current into the input capac-  
itors during power up. A value of 2.5µH is recommended.  
1N4148  
It is necessary to have some low ESR aluminum electrolytic  
capacitors at the input to the converter. These capacitors  
deliver current when the high side MOSFET switches on.  
Figure 7 shows 3 x 1000µF, but the exact number required  
will vary with the speed and type of the processor. For the  
top speed Katmai and Coppermine, the capacitors should be  
rated to take 9A and 6A RMS of ripple current respectively.  
Capacitor ripple current rating is a function of temperature,  
and so the manufacturer should be contacted to find out the  
ripple current rating at the expected operational temperature.  
For details on the design of an input filter, refer to Applica-  
tions Bulletin AB-15.  
R5  
IFB  
RSENSE  
SW  
VOUT  
Figure 6. Precision Current Sensing  
2.5µH  
Schottky Diode Selection  
Vin  
5V  
The application circuit of Figure 1 shows a Schottky diode,  
D1, which is used as a free-wheeling diode to assure that the  
body-diode in Q2 does not conduct when the upper MOS-  
FET is turning off and the lower MOSFET is turning on. It is  
undesirable for this diode to conduct because its high for-  
ward voltage drop and long reverse recovery time degrades  
efficiency, and so the Schottky provides a shunt path for the  
current. Since this time duration is very short, the selection  
criterion for the diode is that the forward voltage of the  
Schottky at the output current should be less than the for-  
ward voltage of the MOSFET’s body diode.  
1000µF, 10V  
0.1µF  
Electrolytic  
Figure 7. Input Filter  
Active Droop  
The RC5057 includes active droop: as the output current  
increases, the output voltage drops. This is done in order to  
allow maximum headroom for transient response of the con-  
verter. The current is sensed by measuring the voltage across  
the high-side MOSFET during its on time. Note that this makes  
the droop dependent on the temperature of the MOSFET.  
However, when the formula given for selecting RS (current  
limit) is used, there is a maximum droop possible (-40mV),  
and when this value is reached, additional drop across the  
MOSFET will not cause any increase in droop—until current  
limit is reached.  
Output Filter Capacitors  
The output bulk capacitors of a converter help determine its  
output ripple voltage and its transient response. It has already  
been seen in the section on selecting an inductor that the ESR  
helps set the minimum inductance, and the capacitance value  
helps set the maximum inductance. For most converters,  
however, the number of capacitors required is determined by  
the transient response and the output ripple voltage, and these  
are determined by the ESR and not the capacitance value. That  
is, in order to achieve the necessary ESR to meet the transient  
and ripple requirements, the capacitance value required is  
already very large.  
Additional droop can be added to the active droop using a  
discrete resistor (typically a PCB trace) outside the control  
loop, as shown in Figure 2. This is typically only required for  
the most demanding applications, such as for the next gener-  
ation Intel processor (tolerance = +40/-70mV), as shown in  
Figure 2.  
The most commonly used choice for output bulk capacitors  
is aluminum electrolytics, because of their low cost and low  
ESR. The only type of aluminum capacitor used should be  
those that have an ESR rated at 100kHz. Consult Application  
Bulletin AB-14 for detailed information on output capacitor  
selection.  
16  
REV. 1.2.0 2/10/00  
PRODUCT SPECIFICATION  
RC5057  
PCB Layout Guidelines  
Appendix  
• Placement of the MOSFETs relative to the RC5057 is  
critical. Place the MOSFETs such that the trace length of  
the HIDRV and LODRV pins of the RC5057 to the FET  
gates is minimized. A long lead length on these pins will  
cause high amounts of ringing due to the inductance of the  
trace and the gate capacitance of the FET. This noise radiates  
throughout the board, and, because it is switching at such  
a high voltage and frequency, it is very difficult to suppress.  
Worst-Case Formulae for the Calculation of  
, R5, and C (Circuit of Figure 1 Only)  
C
out  
in  
The following formulae design the RC5057 for worst-case  
operation, including initial tolerance and temperature depen-  
dence of all of the IC parameters (initial setpoint, reference  
tolerance and tempco, active droop tolerance, current sensor  
gain), the initial tolerance and temperature dependence of  
the MOSFET, and the ESR of the capacitors. The following  
information must be provided:  
• In general, all of the noisy switching lines should be kept  
away from the quiet analog section of the RC5057. That  
is, traces that connect to pins 7, 9, 10, and 8 (LODRV,  
HIDRV, SW and VCCP) should be kept far away from the  
traces that connect to pins 3 through 5, and pin 11.  
VT+, the value of the positive transient voltage limit;  
|VT-|, the absolute value of the negative transient voltage limit;  
IO, the maximum output current;  
• Place the 0.1µF decoupling capacitors as close to the  
RC5057 pins as possible. Extra lead length on these  
reduces their ability to suppress noise.  
Vnom, the nominal output voltage;  
• Each VCC and GND pin should have its own via to the  
appropriate plane. This helps provide isolation between pins.  
Vin, the input voltage (typically 5V);  
• Place the MOSFETs, inductor, and Schottky as close  
together as possible for the same reasons as in the first  
bullet above. Place the input bulk capacitors as close to  
the drains of the high side MOSFETs as possible. In  
addition, placement of a 0.1µF decoupling cap right on  
the drain of each high side MOSFET helps to suppress  
some of the high frequency switching noise on the input  
of the DC-DC converter.  
ESR, the ESR of the output caps, per cap (44mfor the  
Sanyo parts shown in this datasheet);  
RD, the on-resistance of the MOSFET (10mfor the  
FDB7030);  
RD, the tolerance of the current sensor (usually about 67ꢀ  
for MOSFET sensing, including temperature).  
• Place the output bulk capacitors as close to the CPU as  
possible to optimize their ability to supply instantaneous  
current to the load in the event of a current transient.  
Additional space between the output capacitors and the  
CPU will allow the parasitic resistance of the board traces  
to degrade the DC-DC converter’s performance under  
severe load transient conditions, causing higher voltage  
deviation. For more detailed information regarding  
capacitor placement, refer to Application Bulletin AB-5.  
Irms, the rms current rating of the input caps (2A for the  
Sanyo parts shown in this datasheet).  
2
Vnom  
Vin  
Vnom  
Vin  
IO*  
Cin  
=
Irms  
• A PC Board Layout Checklist is available from Fairchild  
Applications. Ask for Application Bulletin AB-11.  
IO* RD * (1 + RD) * 1.10  
R5 =  
50 * 10-6  
Additional Information  
For additional information contact Fairchild Semiconductor at  
http://www.fairchildsemi.com/cf/tsg.htm or contact an autho-  
rized representative in your area.  
The value of R5 must be 8.3K. If a greater values is  
calculated, RD must be reduced.  
Number of capacitors needed for Cout = the greater of:  
ESR * IO  
X =  
VT-  
or  
ESR * IO  
Y =  
14400 * IO * RD  
VT+ 0.004 * Vnom  
+
18 * R5 * 1.1  
REV. 1.2.0 2/10/00  
17  
RC5057  
PRODUCT SPECIFICATION  
Example: Suppose that the transient limits are 134mV,  
current I is 14.2A, and the nominal voltage is 2.000V, using  
MOSFET current sensing and the usual caps. We have VT+  
|VT-| = 0.134, IO = 14.2, Vnom = 2.000, and RD = 0.67.  
We calculate:  
14.2 * 0.010 * (1 + 0.67) * 1.10  
5.2KΩ  
=
R5 =  
50 * 10-6  
=
0.044 * 14.2  
0.134  
= 4.66  
X =  
2
2.000  
5
2.000  
5
0.044 * 14.2  
14.2 *  
= 4.28  
Y
=
14400 * 14.2 * 0.020  
18 * 10400 * 1.1  
=
3.47 4 caps  
Cin  
=
0.134 0.004 * 2.000 +  
2
Since X > Y, we choose X, and round up to find we need 5  
capacitors for COUT  
.
18  
REV. 1.2.0 2/10/00  
PRODUCT SPECIFICATION  
RC5057  
Mechanical Dimensions  
16 Lead SOIC  
Notes:  
Inches  
Millimeters  
Symbol  
Notes  
1. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
Min.  
Max.  
Min.  
Max.  
2. "D" and "E" do not include mold flash. Mold flash or  
protrusions shall not exceed .010 inch (0.25mm).  
A
.053  
.004  
.013  
.008  
.386  
.150  
.069  
.010  
.020  
.010  
.394  
.158  
1.35  
0.10  
0.33  
0.19  
9.80  
3.81  
1.75  
0.25  
0.51  
0.25  
10.00  
4.00  
A1  
B
3. "L" is the length of terminal for soldering to a substrate.  
4. Terminal numbers are shown for reference only.  
5. "C" dimension does not include solder finish thickness.  
6. Symbol "N" is the maximum number of terminals.  
C
D
E
5
2
2
e
.050 BSC  
1.27 BSC  
H
h
.228  
.010  
.016  
.244  
.020  
.050  
5.80  
0.25  
0.40  
6.20  
0.50  
1.27  
L
3
6
N
α
16  
16  
0°  
8°  
0°  
8°  
ccc  
.004  
0.10  
16  
9
8
E
H
1
h x 45°  
D
C
A1  
A
α
SEATING  
PLANE  
C –  
L
e
B
LEAD COPLANARITY  
ccc C  
REV. 1.2.0 2/10/00  
19  
RC5057  
PRODUCT SPECIFICATION  
Ordering Information  
Product Number  
Package  
RC5057M  
16 pin SOIC  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER  
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
www.fairchildsemi.com  
2/10/00 0.0m 011  
Stock#DS30005057  
2000 Fairchild Semiconductor Corporation  

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