RMPA5251_技术文档

October 2004

RMPA5251

4.90–5.85 GHz InGaP HBT Linear Power Amplifier

• 2.5% EVM at 18.0dBm modulated power out

General Description

• 3.3V single positive supply operation

• Adjustable bias current operation

The RMPA5251 power amplifier is designed for high

performance WLAN applications in the 4.9 to 5.35 and 5.15

to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3

x 0.9 mm package with internal matching on both input and

output to 50Ω minimizes next level PCB space and allows

for simplified integration. The on-chip detector provides

power sensing capability while the logic control provides

power saving shutdown options. The PA’s low power

consumption and excellent linearity are achieved using our

InGaP Heterojunction Bipolar Transistor (HBT) technology.

• Two power saving shutdown options (bias and logic

control)

• Integrated power detector with >18dB dynamic range

• Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless

package

• Internally matched to 50Ω

Device

• Minimal external components

Features

• Optimized for use in IEEE 802.11a

WLAN applications

• 4.9 to 5.85 GHz Operation

• 27dB small signal gain

• 26dBm output power @ 1dB compression

1,3

Electrical Characteristics 802.11a OFDM

Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth

Parameter

Minimum Typical Maximum

Unit

GHz

V

10

Frequency

4.90

3.0

5.35

3.6

5.15

3.0

5.85

3.6

Supply Voltage

Gain

3.3

27

3.3

28

dB

Total Current @ 18dBm P

250

260

2.5

240

250

2.5

mA

%

OUT

Total Current @ 19dBm P

2

EVM @ 18dBm P

EVM @ 19dBm P

OUT

2

3.5

%

Detector Output @ 19dBm P

450

5.0

500

5.0

mV

dBm

OUT

4

Detector Threshold

5, 6

P

Spectral Mask Compliance

21.0

20.0

OUT

1

Electrical Characteristics ^{Single Tone}

Parameter

Minimum Typical Maximum

Unit

GHz

V

10

Frequency

4.90

3.0

5.35

3.6

5.15

3.0

5.85

3.6

Supply Voltage

3.3

27

3.3

27.5

7

Gain

dB

7, 11

Total Quiescent Current

140–220

mA

Notes:

1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50Ω system.

2. Percentage includes system noise floor of EVM=0.8%.

3. Not measured 100% in production.

4. P

measured at P corresponding to power detection threshold.

OUT

IN

5. Measured at P at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.

IN

6. P is adjusted to point where performance approaches spectral mask requirements.

IN

7. 100% Production screened.

8. Bias Current is included in the total quiescent current.

9. VL is set to logic level for device off operation.

10. See Application information on Page 3.

11. See Data on Page 8.

RMPA5251 Rev. D

12

Electrical Characteristics Single Tone (Continued)

Parameter

Minimum Typical Maximum

Unit

mA

dBm

mA

µA

8

Bias Current at pin VM

16

26

16

26

7

P1dB Compression

7

Current @ P1dB Comp

425

1.9

<1.0

12

425

1.9

<1.0

16

9

Standby Current

Shutdown Current (VM=0V)

Input Return Loss

dB

Output Return Loss

10

dB

Detector Output at P1dB Comp

2

V

3, 4

Detector P

Threshold

7.0

dBm

GHz

dBc

OUT

Frequency

4.90

2.0

5.35

0.8

5.15

2.0

5.85

0.8

nd

2

Harmonic Output at P1dB

-30

-35

-30

-35

3rd Harmonic Output at P1dB

Logic Shutdown Control Pin (VL):

Device Off

0.0

2.4

10

0.0

2.4

100

<1

V

Device On

Logic Current

µA

µS

dBc

13

Turn-on Time

<1

Turn-off Time

<1

14

Spurious (Stability)

-65

15

Absolute Ratings

Symbol

Parameter

Value

Units

VC1, VC2

IC1–IC3

Positive Supply Voltage

4.0

V

Supply Current

IC1

IC2

IC3

50

150

500

mA

VM

Voltage Mirror

Logic Voltage

RF Input Power

4

5

V

P

L

10

dBm

°C

IN

T

Case Operating Temperature

Storage Temperature

-40 to +85

-55 to +150

CASE

STG

°C

Notes:

3. Not measured 100% in production.

4. P measured at P corresponding to power detection threshold.

OUT

IN

5. Measured at P at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.

IN

6. P is adjusted to point where performance approaches spectral mask requirements.

IN

7. 100% Production screened.

8. Bias Current is included in the total quiescent current.

9. VL is set to logic level for device off operation.

10. See Application information on Page 3.

11. See Data on Page 8.

12. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50É∂ system

13. Measured from Device On signal turn on, (Logic High) to the point where RF POUT stabilizes to 0.5dB.

14. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB.

15. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

RMPA5251 Rev. D

Functional Block Diagram

P1

16

VM2

15

VC2

14

VC3

13

1

Description

N/C

2

VM1

3

4

5

VC1

RF IN

N/C

1

BIAS

CONTROL

12 DT2

VOLTAGE

DETECTOR

6

7

8

9

10

11

12

13

14

15

16

N/C

VM3

N/C

VM1

VC1

2

3

11 DT1

OUTPUT

MATCH

10 RF OUT

RF OUT

DT1 (Vdet)

DT2

INPUT

MATCH

RF IN

4

9

N/C

VC3

VC2

VM2

P1 (Logic)

5

6

7

8

N/C

VM3

N/C

Application Information

The RMPA5251 can be optimized to work over 2 frequency ranges, 4.9 to 5.35 GHz (Low Band) and 5.15 to 5.85 GHz (High

Band).

Using the 2 external component configurations described on the next page, the RMPA5251 can be optimized to give the

best EVM, power and gain over a specified bandwidth.

The data on sheets 7–9 shows the performance when the evaluation board is configured for either low or high band

performance.

RMPA5251 Rev. D

Evaluation Board Schematic

5251

YWWX

Backside Ground

Note:

*C3 only used in Low Band Configuration

All Mirrors and VC connections can be separate

or connected to a common rail.

Evaluation Board Bill of Materials

RMPA5251 4.90 to 5.35 GHz Operation Eval Board BOM (Low Band)

No.

Ref

Value Unit Qty Size

Description

MFG

Murata

Part No.

Comments

1

C1,C2

10

µF

2

0805 10µF Capacitor

GRM21BR60J106KE01D Decoupling

Capacitor

2

3

C3

C4

1

pF

1

0603 1pF Capacitor

Murata

GRM39C0G010B100V

100

0402 100pF Capacitor Murata

GRM1885C1H101JA01D Detector

Capacitor

4

R1,R2

10K

10

Ω

2

0402 10K Ω Resistor

IMS

RCI-0402-1002J

Detector

Resistor

5

6

7

L1,L2,L3

B1

nH

3

1

2

0402 10nH Inductor

Fixture Board

Toko

LLV1005FB10NJ

RF Choke

Crown Circuits G657432

J1,J2

Jack End Launch Johnson 142-0701-841

SMA

Components

Digikey

8

9

J3

11

1

Right Angle

S1322-12-ND

RMPA5251

Single Header

A1

Packaged MMIC Fairchild

RMPA5251 Rev. D

RMPA5251 5.15 to 5.85 GHz Operation Eval Board BOM (High Band)

No. Ref Value Unit Qty Size

Description

MFG

Murata

Part No.

Comments

Decoupling

Capacitor

1

2

C1,C2

C4

10

µF

pF

2

1

0805 10 µF Capacitor

GRM21BR60J106K

100

0402 100 pF Capacitor Murata

GRM1885C1H101JA01D Detector

Capacitor

3

4

5

6

7

R1,R2 10K

Ω

nH

2

1

2

0402 10 KΩ Resistor

0402 10 nH Inductor

0402 15 nH Inductor

Fixture Board

IMS

RCI-0402-1002J

LLV1005FB10NJ

LLV1005FB15NJ

Detector Resistor

L1,L3

L2

10

15

Toko

RF Choke

B1

Crown Circuits G657432

142-0701-841

J1,J2

Jack End Launch Johnson

SMA Components

8

9

J3

11

1

Right Angle Single Digikey

Header

S1322-12-ND

RMPA5251

A1

Packaged MMIC

Fairchild

Evaluation Board Layout

VL

*

C1

L2

L3

R2

C3

R1

J2

J1

C2

L1

C4

A1

Not Used

J3

= Jumper/short connection

= component

Actual Board Size = 2.0" x 1.5"

* VL is labeled P1 on Eval Board

Evaluation Board Operation

Recommended turn-on sequence:

1) Connect RF ports J1, J2 to RF test equipment.

2) Connect common ground terminal to the Ground (GND) pin on the board.

3) Connect logic control pin VL to positive supply.

4) Connect terminals VC1, VC2 and VC3 together and connect to positive supply (VC).

5) Connect terminals VM1, VM2 and VM3 together and connect to positive supply (VM).

6) Connect voltmeter to Detector Output, pin DT1.

7) Connect pin DT2 to ground.

8) Apply high voltage of +2.4V to logic control pin VL. (On)

9) Apply positive voltage of 3.3V to VC1, VC2 and VC3 (first, second and third stage collector).

2

10) Apply positive voltage of 3.3V to VM1, VM2 and VM3 (bias networks) .

11) At this point, you should expect to observe the following positive currents flowing into the pins:

Current

~150 µA

~184 mA

~16 mA

VL

VC (Total)

VM (Total)

RMPA5251 Rev. D

12) Apply input RF power to SMA connector pin RF IN. Currents on collector pins will vary depending on the input drive

level.

13) Vary positive voltage VL from +2.4V to +0.5V to shut down the amplifier or alter the power level.

Shut down current ﬂow into the pins:

Current

<1 nA

VL

VC (total)

VM (total)

<1 nA

<1.9 mA

Recommended turn-off sequence:

Use reverse order described in the turn-on sequence above.

Note:

1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design.

2. VM may be adjusted from +2.9 to +3.3V to adjust bias current operation. See Typical Characteristics.

Package Outline

Dimensions in inches [mm]

5251

YWWX

Application Information

Precautions to Avoid Permanent Device Damage:

—Static Sensitivity: Follow ESD precautions to protect against ESD damage:

• A properly grounded static-dissipative surface on which to place devices.

• Static-dissipative floor or mat.

• A properly grounded conductive wrist strap for each person to wear while handling devices.

RMPA5251 Rev. D

Typical Characteristics ^(802.11a)

RMPA5251 Comparison Low Band Vs. High Band

Total Measured EVM Vs. Frequency

Modulated Power Out =18 dBm 54 Mbps OFDM

VC=VM=3.3V, ICQ=184mA, IMQ=16mA

5

RMPA5251 Gain Vs. Modulated Power Out (Low and High Band)

QAM64 54 Mbps OFDM Modulation

VC=VM=3.3V, ICQ=184mA, IMQ=16mA, T=25^o

C

32

30 Low Band Configuration

4

28

26

24

22

20

18

16

14

High Band Configuration

3

Low Band

Configuration

2

High Band Configuration

10 nH on VC2 Replaced with 15 nH

and 1 pF on VC2 removed

LowBand

HighBand

1

0

Includes 0.8% System Level EVM

4.9

5

5.1

5.2

5.3

5.4

5.5

5.6

5.7

5.8

5.9

6

4.9

5

5.1

5.2

5.3

5.4

5.5

5.6

5.7

5.8

5.9

6

Frequency (GHz)

Low Band Configuration

High Band Configuration

RMPA5251 Total Measured EVM QAM64 54 Mbps OFDM Modulation

VC=VM=3.3V, ICQ=184mA, IMQ=16mA, F=5.15- 5.85GHz, T=25^oC

8

VC=VM=3.3V, ICQ=184mA, IMQ=16mA, F=5.15- 5.35GHz, T=25^oC

8

7.5

4.90 GHz

4.95 GHz

5.00 GHz

5.05 GHz

5.10 GHz

5.15 GHz

5.20 GHz

5.25 GHz

5.30 GHz

5.35 GHz

5.15 GHz

5.25 GHz

5.35 GHz

5.45 GHz

5.55 GHz

5.65 GHz

5.75 GHz

5.85 GHz

7

6.5

6

5.5

5

4.5

4

3.5

3

7

6.5

6

5.5

5

4.5

4

3.5

3

2.5

2

1.5

1

2.5

2

1.5

1

0.5

0

Includes0.8%System Level EVM

0.5

0

Includes0.8%System LevelEVM

4

5

6

7

8

9

10 11 12 13 14 15 16 17 18 19 20 21 22

4

5

6

7

8

9

10 11 12 13 14 15 16 17 18 19 20 21 22

Modulated Power Out (dBm)

Low Band Configuration

High Band Configuration

RMPA5251 Output Power for 3%Total Measured EVM 802.11a 54 Mbps

Modulation VM=VC=3.3 V, ICQ=184 mA, IMQ=16 mA (High Band Config)

RMPA5251 Output Power for 3% Total Measured EVM 802.11a 54 Mbps

Modulation VM=VC=3.3 V, ICQ=184 mA, IMQ=16 mA (Low Band Config)

21

20

19

18

17

16

15

14

13

12

11

10

9

21

20

19

18

17

16

15

14

13

12

11

10

9

18dBm

8

7

6

5

4

Includes 0.8% System Level EVM

3

2

1

0

4.9

5

5.1

5.2

5.3

5.4

5.5

5.6

5.7

5.8

5.9

4.9

4.95

5

5.05

5.1

5.15

5.2

5.25

5.3

5.35

Frequency (GHz)

Low Band Configuration

High Band Configuration

RMPA5251 Spectral Plot Showing Compliance to 802.11a Spectral

Mask Requirements @ 21.0 dBm Modulated Output Power 54Mbps OFDM

Data, 16.7 MHz BW, 176µS Burst, 100µS Idle, Frequency = 5.25 GHz,

VC = VM = 3.3V, ICQ = 184 mA, IMQ = 16 mA, T = 25°C

RMPA5251 Spectral Plot Showing Compliance to 802.11a Spectral

Mask Requirements @ 20.0 dBm Modulated Output Power 54Mbps OFDM

Data, 16.7 MHz BW, 176µS Burst, 100µS Idle, Frequency = 5.5 GHz,

VC = VM = 3.3V, ICQ = 184 mA, IMQ = 16 mA, T = 25°C

RMPA5251 Rev. D

Typical Characteristics ^(802.11a)(continued)

Low Band Configuration

High Band Configuration

RMPA5251 Detector Voltage 4.9 - 5.35 GHz OFDM

54 Mbps Modulation VC = VM = 3.3V, ICQ = 184mA,

IMQ = 16mA, T = 25°C Low Band Configuration

RMPA5251 Detector Voltage 5.15 - 5.85 GHz OFDM

54 Mbps Modulation VC = VM = 3.3V, ICQ = 184mA,

IMQ = 16mA, T = 25°C High Band Configuration

800

750

700

650

600

550

500

450

400

350

300

250

200

150

100

50

800

750

700

650

600

550

500

450

400

350

300

250

200

150

100

50

4.90 GHz

4.95 GHz

5.00 GHz

5.05 GHz

5.10 GHz

5.15 GHz

5.20 GHz

5.25 GHz

5.30 GHz

5.35 GHz

5.15 GHz

5.25 GHz

5.35 GHz

5.45 GHz

5.55 GHz

5.65 GHz

5.75 GHz

5.85 GHz

0

4

5

6

7

8

9

10 11 12 13 14 15 16 17 18 19 20 21 22

4

5

6

7

8

9

10 11 12 13 14 15 16 17 18 19 20 21 22

Total Channel Power 16.7 MHz (dBm)

Low Band Configuration

RMPA5251 Performance vs. Change in Mirror Voltage (VM)*

RMPA5251 Total Current vs. VM vs. Modulated Output

Power VC = 3.3V, Frequency = 5.25 GHz, T = 25°C, Low Band Configuration

Gain and Total Quiescent Current vs. Mirror Voltage (VM)

Frequency = 5.25 GHz, VC = 3.3V, T = 25°C, Low Band Configuration

280

30

29

28

27

26

25

24

23

22

21

20

19

240

VM

3.3V

3.2V

3.1V

3.0V

230

220

210

200

190

180

170

160

150

140

130

Gain

260

240

220

200

180

160

140

120

100

2.9V

Total Current

2.9

3.0

3.1

Mirror Voltage, VM (V)

3.2

3.3

3

5

7

9

11

13

15

17

19

21

23

Modulated Output Power (dBm)

VM:

2.9V

3.0V

3.1V

3.2V

3.3V

*Total current can be varied by resetting the quiescent current

by means of adjusting the mirror voltage, VM.

Low Band Configuration

RMPA5251 Modulated Output Power (OFDM 54 Mbps)

at 2% and 3% EVM vs. Mirror Voltage vs. Frequency,

VC=3.3V, T=25°C

RMPA5251 Output Power for 2% EVM Increase for

VM = 2.9 to VM = 3.3V 802.11a 54 Mbps OFDM Modulation

RMPA5251 Output Power for 3% EVM Increase for

VM = 2.9 to VM = 3.3V 802.11a 54 Mbps OFDM Modulation

20

19

18

17

16

15

14

20

19

18

17

16

15

14

3.3V

3.2V

3.1V

3.0V

2.9V

3.3V

3.2V

3.1V

3.0V

Includes0.8% System LevelEVM

2.9V

Includes0.8% SystemLevel EVM

5.15

5.2

5.25

Frequency(GHz)

5.3

5.35

5.15

5.2

5.25

Frequency (GHz)

5.3

5.35

VM = 2.9 V Itotal = 142 mA

VM = 3.1 V Itotal = 170 mA

VM = 3.3 V Itotal = 200 mA

VM = 3.0 V Itotal = 155 mA

VM = 3.2 V Itotal = 185 mA

VM = 2.9 V Itotal= 142 mA

VM = 3.1 V Itotal= 170 mA

VM = 3.3 V Itotal= 200 mA

VM = 3.0 V Itotal = 155 mA

VM = 3.2 V Itotal = 185 mA

RMPA5251 Rev. D

Typical Characteristics ^{(Single Tone)}(continued)

Low Band Configuration

High Band Configuration

RMPA5251 S-Parameters vs. Frequency

VM = VC = 3.3V, IMQ = 16mA, ICQ = 184mA, High Band Configuration

RMPA5251 S-Parameters vs. Frequency

VM = VC = 3.3V, IMQ = 16mA, ICQ = 184mA, Low Band Configuration

30

27

24

21

18

15

12

9

0

30

27

-2

24

21

18

15

12

9

-4

S21

-6

S22

S11

-8

-10

-12

-14

-16

-18

-20

-10

-12

-14

-16

-18

-20

S11

6

3

0

4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0

Frequency (GHz)

4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0

Frequency (GHz)

Low Band Configuration

High Band Configuration

RMPA5251 Typical Gain vs Single Tone Output Power

VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA,

4.9 - 5.35 GHz Low Band Configuration

30

RMPA5251 Typical Gain vs Single Tone Output Power

VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA,

5.2 - 5.8 GHz High Band Configuration

30

29

28

27

26

29

28

27

26

4.90 GHz

5.2 GHz

5.3 GHz

5.4 GHz

5.5 GHz

5.6 GHz

5.7 GHz

5.8 GHz

25

24

23

22

21

20

4.95 GHz

5.00 GHz

5.05 GHz

5.10 GHz

5.15 GHz

5.25 GHz

5.35 GHz

24

23

22

21

20

6

7

8

9 10 11 1213 14 15 16 17 18 19 20 21 22 23 24 25 2627 28

Output Power (dBm)

6

7

8

9 10 11 1213 14 15 16 17 18 19 20 21 22 23 24 25 2627 28

Output Power (dBm)

Low Band Configuration

High Band Configuration

RMPA5251 Typical Total Current vs. Single Tone Output Power

VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, 5.2 - 5.8 GHz

RMPA5251 Typical Total Current vs. Single Tone Output Power

VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, 4.9 - 5.35 GHz

High Band Configuration

Low Band Configuration

550

4.90 GHz

500

5.2 GHz

5.3 GHz

5.4 GHz

5.5 GHz

5.6 GHz

5.7 GHz

5.8 GHz

500

450

400

350

300

250

200

150

100

4.95 GHz

450

400

350

300

250

200

150

100

5.00 GHz

5.05 GHz

5.10 GHz

5.15 GHz

5.25 GHz

5.35 GHz

6

7

8

9 10 1112 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

Output Power (dBm)

6

7

8

9 10 1112 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

Output Power (dBm)

High Band Configuration

RMPA5251 Performance vs. Change in Collector Voltage (VC)

RMPA5251 Single Tone Gain vs. VC vs. Frequency

VM = 3.3V T=25°C High Band Configuration

RMPA5251 Single Tone P1dB vs. VC vs. Frequency

VM = 3.3V T=25°C High Band Configuration

28

27

26

25

24

23

22

21

20

19

18

17

16

15

35

30

25

20

15

10

5

VC

3.0V

3.3V

3.6V

VC

3.0V

3.3V

3.6V

0

4.85 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85 5.95 6.05

Frequency (GHz)

4.85 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85 5.95 6.05

Frequency (GHz)

RMPA5251 Rev. D

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.



ACEx™

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MSX™

FAST

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

FACT™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™



PowerTrench



QFET

QS™

SyncFET™



QT Optoelectronics™ TinyLogic

HiSeC™

I²C™

Quiet Series™

RapidConfigure™

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TruTranslation™

UHC™

i-Lo™

ImpliedDisconnect™

OCXPro™

OPTOLOGIC



FACT Quiet Series™

UltraFET



SILENT SWITCHER VCX™

SMART START™

SPM™

OPTOPLANAR™

PACMAN™

POP™

Across the board. Around the world.™



The Power Franchise

ProgrammableActive Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I13


型号：	RMPA5251
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	4.90-5.85 GHz InGaP HBT Linear Power Amplifier 4.90-5.85千兆赫的InGaP HBT线性功率放大器放大器功率放大器
文件：	总10页 (文件大小：500K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RMPA5251 [FAIRCHILD]

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