SFH9154 [FAIRCHILD]
Advanced Power MOSFET; 先进的功率MOSFET
| 型号： | SFH9154 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Advanced Power MOSFET |
| 文件： | 总6页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH9154
Advanced Power MOSFET
FEATURES
BVDSS = -150 V
RDS(on) = 0.2 Ω
ID = -18 A
■ Avalanche Rugged Technology
■ Rugged Gate Oxide Technology
■ Lower Input Capacitance
■ Improved Gate Charge
■ Extended Safe Operating Area
■ 150oC Operating Temperature
■ Lower Leakage Current : 10 µA (Max.) @ VDS = -150V
■ Lower RDS(ON) : 0.140 Ω (Typ.)
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
-150
-18
Units
VDSS
Drain-to-Source Voltage
V
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
ID
A
-11.5
-72
IDM
VGS
EAS
IAR
①
A
V
Gate-to-Source Voltage
±30
1215
-18
Single Pulsed Avalanche Energy
Avalanche Current
②
①
①
③
mJ
A
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC)
Linear Derating Factor
20.4
-5.0
204
mJ
V/ns
W
PD
TJ , TSTG
TL
1.63
W/oC
Operating Junction and
- 55 to +150
300
Storage Temperature Range
Maximum Lead Temp. for Soldering
oC
Purposes, 1/8＂ from case for 5-seconds
Thermal Resistance
Symbol
RθJC
Characteristic
Junction-to-Case
Case-to-Sink
Typ.
Max.
0.61
--
Units
--
0.24
--
oC/W
RθCS
RθJA
Junction-to-Ambient
40
1
P-CHANNEL
POWER MOSFET
SFH9154
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
V
GS=0V,ID=-250μA
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
V/℃
V
-150 --
-- -0.16 --
-2.0 -- -4.0
-- -100
--
ΔBV/ΔTJ
VGS(th)
ID=-250μA
See Fig 7
V
V
V
DS=-5V,ID=-250μA
GS=-30V
GS=30V
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
--
--
--
--
IGSS
nA
--
--
100
-10
VDS=-150V
DS=-120V,TC=125℃
IDSS
Drain-to-Source Leakage Current
μA
V
-- -100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
RDS(on)
VGS=-10V,ID=-9.0A
VDS=-40V,ID=-9.0A
④
④
--
0.14 0.2
Ω
Ω
gfs
Ciss
Coss
Crss
td(on)
tr
--
--
--
--
--
--
--
--
--
--
--
11
--
2290 3000
VGS=0V,VDS=-25V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
600
300
45
400
200
20
pF
ns
See Fig 5
VDD=-75V,ID=-18A,
90
40
RG=6.2Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
170
90
80
See Fig 13
④ ⑤
40
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain(＂Miller＂) Charge
130
--
100
20
VDS=-120V,VGS=-10V,
ID=-18A
Qgs
Qgd
nC
--
40
See Fig 6 & Fig 12 ④ ⑤
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
Integral reverse pn-diode
in the MOSFET
--
--
--
--
--
-18
-72
A
ISM
①
④
VSD
trr
V
-- -5.0
TJ=25℃,IS=-18A,VGS=0V
TJ=25℃,IF=-18A
ns
μC
-- 200
-- 1.5
--
--
Qrr
diF/dt=100A/μs
④
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=5mH, IAS=-18A, VDD=-50V, RG=27Ω, Starting TJ =25℃
③ ISD≤-18A, di/dt≤450A/μs, VDD≤BVDSS , Starting TJ =25℃
④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
⑤ Essentially Independent of Operating Temperature
2
P-CHANNEL
POWER MOSFET
SFH9154
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
2
-V
10
GS
Top :
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
@ Notes :
1. 250 s Pulse Test
µ
2
10
2. T = 25 oC
C
1
10
Bottom : 4.5V
1
10
150 oC
25 oC
@ Notes :
0
10
1. V = 0 V
GS
2. V = 40 V
DS
3. 250 s Pulse Test
µ
- 55 oC
4
0
-1
10
10
-1
0
1
0
2
6
8
10
10
10
10
-V , Drain-Source Voltage [V]
-V , Gate-Source Voltage [V]
GS
DS
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
0.24
2
10
0.20
0.16
0.12
0.08
V =-10 V
1
GS
10
V =-20 V
GS
0
10
@Notes:
150oC
1. V =0V
GS
2. 250 sPulseTest
µ
@Note :T =25oC
25oC
J
-1
10
0
15
30
45
60
75
90
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-I , Drain Current [A]
-V , Source-Drain Voltage [V]
D
SD
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
5000
15
10
5
C =C +C (C =shorted)
iss gs gd
ds
C =C +C
oss ds gd
C =C
4000
3000
2000
1000
rss gd
Ciss
V =-30V
DS
V =-75V
DS
V =-120V
DS
Coss
Crss
@Notes:
1. V =0 V
GS
2. f=1MHz
@Notes:I = -18A
D
00
10
0
1
0
20
40
60
80
100
10
Q , Total Gate Charge [nC]
-V , Drain-Source Voltage [V]
G
DS
3
P-CHANNEL
POWER MOSFET
SFH9154
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
1.1
1.0
0.9
0.8
2.0
1.6
1.2
0.8
@ Notes :
1. Vgs = -10V
2. Id = -9A
@Notes:
1. V = 0 V
GS
2. I =250 A
µ
D
-75 -50 -25
0
25
50
75
100 125 150 175
o
-75 -50 -25
0
25
50
75
100 125 150 175
o
T , Junction Temperature [C]
T , Junction Temperature [C]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
20
3
10
OperationinThisArea
isLimitedby RDS(on)
2
15
10
5
10
0.1ms
1ms
10ms
DC
1
10
@Notes:
1. T = 25 oC
C
0
2. T =150 oC
10
J
3. SinglePulse
-1
0
10
0
1
2
25
50
75
100
125
150
10
10
10
o
T , Case Temperature [C]
-V , Drain-Source Voltage [V]
c
DS
Fig 11. Thermal Response
100
D=0.5
0.2
@ Notes :
10-1
0.1
1. Z (t) = 0.61 oC/W Max.
θ JC
2. Duty Factor, D = t1/t2
3. TJM-TC = PDM*Zθ JC(t)
0.05
0.02
0.01
PDM
single pulse
10-2
10-5
t1
t2
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
4
P-CHANNEL
POWER MOSFET
SFH9154
Fig 12. Gate Charge Test Circuit & Waveform
* Current Regulator ”
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
-10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
-3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
t on
t off
Vout
Vin
tf
td(on)
tr
td(off)
VDD
( 0.5 rated VDS
)
Vin
10%
RG
DUT
-10V
90%
Vout
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
2
2
LL
ID
----
--------------------
BVDSS -- VDD
EAS
=
LL IAS
VDS
t p
Time
Vary tp to obtain
required peak ID
VDD
VDS (t)
RG
C
VDD
ID (t)
DUT
-10V
IAS
BVDSS
t p
5
P-CHANNEL
POWER MOSFET
SFH9154
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
--
I S
L
Driver
VGS
Compliment of DUT
RG
(N-Channel)
VDD
VGS
• dv/dt controlled by 밨G
• IS controlled by Duty Factor “D”
Gate Pulse Width
VGS
--------------------------
D =
Gate Pulse Period
10V
( Driver )
Body Diode Reverse Current
IRM
I S
( DUT )
di/dt
IFM , Body Diode Forward Current
Vf
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
6
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