SI3446DVL99Z [FAIRCHILD]

Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6;


型号：	SI3446DVL99Z
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 开关光电二极管晶体管
文件：	总5页 (文件大小：93K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

April 2001

SI3446DV

Single N-Channel, 2.5V Specified PowerTrench MOSFET

General Description

Features

This N-Channel 2.5V specified MOSFET is produced

using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain low

gate charge for superior switching performance.

• 6.2 A, 20 V. R_DS(on)= 0.024 Ω @ V_GS= 4.5 V

R_DS(on)= 0.032 Ω @ V_GS= 2.5 V

• Fast switching speed.

These devices have been designed to offer exceptional

power dissipation in a very small footprint compared

with bigger SO-8 and TSSOP-8 packages.

• Low gate charge (10.5nC typical).

• High performance trench technology for extremely

low R_DS(ON)

Applications

• SuperSOT^TM-6 package: small footprint (72% smaller

than standard SO-8); low profile (1mm thick).

• DC/DC converter

• Load switch

• Battery Protection

SuperSOT ^TM-6

Absolute Maximum Ratings ^T_A^{= 25°C unless otherwise noted}

Symbol

Parameter

SI3446DV

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Drain Current - Pulsed

6.2

(Note 1a)

P_D

Power Dissipation for Single Operation

1.6

(Note 1a)

(Note 1b)

0.8

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

R_θ

(Note 1a)

(Note 1)

C/W

Thermal Resistance, Junction-to-Case

R_θ

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

.637

FDC637AN

7’’

8mm

3000 units

2001 Fairchild Semiconductor Corporation

SI3446DV Rev. A1

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain-Source Breakdown Voltage

V_GS= 0 V, I = 250

Breakdown Voltage Temperature

Coefficient

I = 250 A, Referenced to 25 C

mV/ C

∆

I_DSS

I_GSSF

I_GSSR

Zero Gate Voltage Drain Current

V_DS= 16 V, V_GS= 0 V

_GS= 12 V, V_DS= 0 V

Gate-Body Leakage Current, Forward

100

-100

Gate-Body Leakage Current, Reverse V_GS= -12 V, V_DS= 0 V

On Characteristics (Note 2)

V_GS(th)

Gate Threshold Voltage

0.4

0.82

-3

1.5

V_DS= V_GS, I = 250

Gate Threshold Voltage

Temperature Coefficient

∆

I =250 A,Referenced to 125 C

mV/ C

∆

GS(th)

R_DS(on)

Static Drain-Source

On-Resistance

V_GS= 4.5 V,I_D= 6.2 A

0.019 0.024

0.028 0.041

0.025 0.032

Ω

V_GS= 4.5 V,I = 6.2 A,T =125 C

V_GS= 2.5 V, I_D= 5.2 A

I_D(on)

g_FS

On-State Drain Current

V_GS= 4.5 V, V_DS= 5 V

Forward Transconductance

V_DS= 5 V, I_D= 6.2 A

7.4

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

_DS= 10 V, V_GS= 0 V,

1125

290

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

145

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

_DD= 10 V, I_D= 1 A,

_GS= 4.5 V, R_GEN= 6

Ω

Q_g

Q_gs

Q_gd

_DS= 5 V, I_D= 6.2 A,

_GS= 4.5 V

10.5

1.5

2.2

Drain-Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain-Source Diode Forward Current

1.3

1.2

V_SD

Drain-Source Diode Forward Voltage V_GS= 0 V, I_S= 1.3 A

0.7

(Note 2)

Notes:

R_θJAis the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface

of the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

a) 78° C/W when mounted on a 1.0 in²pad of 2 oz. copper.

b) 156° C/W when mounted on a minimum pad of 2 oz.copper.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

SI3446DV Rev. A1

Typical Characteristics

2.5

V_GS= 4.5V

2.5V

3.0V

2.0V

V_GS= 2.0V

1.5

2.5V

3.0V

4.5V

1.5V

0.5

I_D, DRAIN CURRENT (A)

0.4

0.8

1.2

1.6

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

0.08

0.06

0.04

0.02

1.5

1.4

1.3

1.2

1.1

I_D= 6.2A

V_GS= 4.5V

T_J= 125^oC

25^oC

0.9

0.8

0.7

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

100

T_J= -55^oC

25^oC

V_GS= 0

V_DS= 5V

125^oC

T_J= 125^oC

25^oC

0.1

-55^oC

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

0.5

1.5

2.5

V_SD, BODY DIODE VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

SI3446DV Rev. A1

Typical Characteristics (continued)

1800

1500

1200

900

600

300

V_DS= 5V

f = 1MHz

V_GS= 0V

I_D= 6.2A

10V

15V

C_iss

C_oss

C_rss

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate-Charge Characteristics

Figure 8. Capacitance Characteristics

100

SINGLE PULSE

_θJA= 156^oC/W

T_A= 25^oC

100

R_DS(ON)LIMIT

1ms

10ms

100ms

V_GS= 4.5V

SINGLE PULSE

R_θ_JA= 156^oC/W

T_A= 25^oC

0.1

0.01

0.1

100

0.1

100

1000

V_DS, DRAIN-SOURCE VOLTAGE (V)

SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum

Power Dissipation

D = 0.5

0.5

(t) = r(t) * R

θJA

= 156°C/W

θJA

0.2

0.1

P(pk)

0.05

0.02

- T = P * R

(t)

θJA

0.02

0.01

Duty Cycle, D = t / t

Single Pulse

0.01

0.005

0.00001

0.0001

0.001

0.01

0.1

, TIME (sec)

100

300

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient themal response will change depending on the circuit board design.

SI3446DV Rev. A1

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

PACMAN™

POP™

PowerTrench

QFET™

QS™

QT Optoelectronics™

Quiet Series™

SILENT SWITCHER

SMART START™

Star* Power™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

FAST

FASTr™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

UltraFET

VCX™

EcoSPARK™

E²CMOS^TM

EnSigna^TM

FACT™

FACT Quiet Series™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H1

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