SI4425DY_NL [FAIRCHILD]

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型号：	SI4425DY_NL
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	暂无描述晶体小信号场效应晶体管开关光电二极管
文件：	总5页 (文件大小：120K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

January 2001

Si4425DY

Single P-Channel, Logic Level, PowerTrench^TMMOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

the on-state resistance and yet maintain low gate charge

for superior switching performance.

-11 A, -30 V. R_DS(ON)= 0.014 W @ V_GS= -10 V,

R_DS(ON)= 0.020 W @ V_GS= -4.5 V.

Low gate charge (30nC typical).

High performance trench technology for extremely low

R_DS(ON)

These devices are well suited for notebook computer

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

High power and current handling capability.

SuperSOT^TM-6

SO-8

SOT-223

SuperSOT^TM-8

SOIC-16

SOT-23

SO-8

Absolute Maximum Ratings

T_A= 25^oC unless otherwise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

Si4425DY

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

-30

±20

(Note 1a)

-11

-50

P_D

Power Dissipation for Single Operation

(Note 1a)

2.5

(Note 1b)

(Note 1c)

1.2

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_q_JA

R_q_JC

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

(Note 1)

Si4425DY Rev.A

Electrical Characteristics (T_A= 25 ^OC unless otherwise noted )

Symbol

Parameter

Conditions

Min Typ

Max

Units

OFF CHARACTERISTICS

BV_DSS

Drain-Source Breakdown Voltage

V_GS= 0 V, I _D= -250 µA

-30

Breakdown Voltage Temp. Coefficient

Zero Gate Voltage Drain Current

I_D= -250 µA, Referenced to 25 ^oC

-22

mV/^oC

DBV_DSS/DT_J

I_DSS

V_DS= -24 V, V_GS= 0 V

-1

µA

T_J= 55°C

-10

I_GSSF

I_GSSR

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

V_GS= 20 V, V_DS= 0 V

V_GS= -20 V, V_DS= 0 V

100

-100

ON CHARACTERISTICS (Note 2)

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= -250 µA

I_D= 250 µA, Referenced to 25 ^oC

-1

-1.7

4.3

-3

Gate Threshold Voltage Temp. Coefficient

Static Drain-Source On-Resistance

mV/^oC

DV_GS(th)/DT_J

R_DS(ON)

V_GS= -10 V, I _D= -11 A

0.011

0.014

T_J=125°C

0.016 0.023

V_GS= -4.5 V, I _D= -9 A

V_GS= -10 V, V_DS= -5 V

V_DS= -10 V, I _D= -11 A

0.015

0.02

I_D(ON)

g_FS

On-State Drain Current

-50

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_DS= -15 V, V_GS= 0 V,

f = 1.0 MHz

3000

870

iss

C_oss

C_rss

Output Capacitance

Reverse Transfer Capacitance

360

SWITCHING CHARACTERISTICS (Note 2)

t_D(on)

t_r

t_D(off)

t_f

Turn - On Delay Time

Turn - On Rise Time

V_DS= -15 V, I _D= -1 A

V_GEN= -10 V, R_GEN= 6 W

Turn - Off Delay Time

Turn - Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

100

140

Q_g

Q_gs

Q_gd

V_DS= -15 V, I _D= -11 A,

V_GS= -5 V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I_S

Maximum Continuous Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

-2.1

-1.2

V_SD

V_GS= 0 V, I_S= -2.1 A (Note 2)

-0.72

Notes:

1. R_qis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_qis

guaranteed by design while R_q_CAis determined by the user's board design.

b. 105^OC/W on a 0.04 in²

pad of 2oz copper.

a. 50^OC/W on a 1 in²pad

of 2oz copper.

c. 125^OC/W on a 0.006 in²pad

of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% .

Si4425DY Rev.A

Typical Electrical Characteristics

2.5

V_GS= -10V

-6.0V

-4.5V

V_GS

= -3.5V

-3.5V

-4.0V

1.5

-4.5 V

-5.5V

-7.0V

-3.0V

-10V

0.5

0.6

- V

1.2

1.8

2.4

- I , DRAIN CURRENT (A)

, DRAIN-SOURCE VOLTAGE (V)

Figure 2. On-Resistance Variation with

Figure 1. On-Region Characteristics.

Dain Current and Gate Voltage.

1.6

0.05

0.04

0.03

0.02

0.01

ID = -5.5A

I_D

V_GS

-11A

-10V

1.4

1.2

= 125° C

0.8

0.6

25° C

-50

-25

100

125

150

, JUNCTION TEMPERATURE (° C)

- V , GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

Temperature.

V_DS= -5.0V

= -55° C

V_GS

= 0V

25° C

125° C

= 125° C

25° C

-55° C

0.1

0.01

0.001

0.4

0.8

1.2

- V

, BODY DIODE FORWARD VOLTAGE (V)

- V

, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

Si4425DY Rev.A

Typical Electrical Characteristics (continued)

6000

4000

I_D= -11A

V_DS= -5V

iss

-10V

2000

1000

500

-15V

oss

rss

f = 1 MHz

200

100

V_GS

0 V

0.1

0.2

0.5

20 30

, GATE CHARGE (nC)

- V

, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

SINGLE PULSE

R_q_JA=125°C/W

T = 25°C

100ms

0.5

V_GS= -10V

SINGLE PULSE

R_q= 125° C/W

0.05

0.01

T_A

25° C

0.001

0.01

0.1

100 300

0.05 0.1

0.3

30 50

SINGLE PULSE TIME (SEC)

- V

, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power

Dissipation.

D = 0.5

0.5

(t) = r(t) * R

0.2

= 125°C/W

0.1

0.05

P(pk)

0.02

0.01

t₁

t₂

0.01

Single Pulse

T - T = P * R (t)

0.005

Duty Cycle, D = t₁/t₂

0.002

0.001

0.0001

0.001

0.01

0.1

t , TIME (sec)

100

300

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

Si4425DYRev.A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

CoolFET™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench™

QS™

UHC™

VCX™

CROSSVOLT™

E²CMOS^TM

FACT™

FACT Quiet Series™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

TinyLogic™

FAST^®

FASTr™

GTO™

HiSeC™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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