SI4539DYL86Z [FAIRCHILD]
Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | SI4539DYL86Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 |
| 文件： | 总9页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2001
Si4539DY
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
N-Channel 7.0 A,30 V, RDS(ON)=0.028 W @ VGS=10 V
DS(ON)=0.040 W @ VGS= 4.5 V.
P-Channel -5.0 A,-30 V,RDS(ON)=0.052 W @ VGS=-10 V
DS(ON)=0.080W @ VGS=-4.5 V.
R
R
High density cell design for extremely low RDS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
SuperSOTTM-6
SOT-23
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2
5
6
7
8
4
D2
D1
3
2
1
D1
G2
S2
G1
pin 1
SO-8
S1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
N-Channel
P-Channel
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
30
20
7
-30
-20
-5
V
V
A
Drain Current - Continuous
- Pulsed
(Note 1a)
20
-20
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
1.6
W
PD
(Note 1a)
(Note 1b)
(Note 1c)
1
0.9
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RqJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
78
40
°C/W
°C/W
(Note 1)
Rq
JC
Si4539DY Rev. A
© 2001 Fairchild Semiconductor International
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type Min
Typ
Max Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
ID = 250 µA, Referenced to 25 oC
ID = -250 µA, Referenced to 25 oC
VDS = 24 V, VGS = 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
All
30
V
V
-30
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
30
mV/oC
DBVDSS/DTJ
-25
IDSS
1
µA
µA
nA
nA
-1
VDS = -24 V, VGS = 0 V
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
100
-100
All
VGS = -20 V, VDS = 0 V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
1
1.7
-1.5
-4.4
3.2
3
V
V
VGS(th)
VDS = VGS, ID = 250 µA
-1
-3
VDS = VGS, ID = -250 µA
ID = 250 µA, Referenced to 25 oC
ID = -250 µA, Referenced to 25 oC
VGS = 10 V, ID = 7.0 A
mV/oC
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
DVGS(th)/DTJ
0.024 0.028
0.035 0.04
0.044 0.052
0.068 0.08
RDS(ON)
W
VGS = 4.5 V, ID = 6.0 A
P-Ch
VGS = -10 V, ID = -5.0 A
VGS = -4.5 V, ID = - 4.0 A
On-State Drain Current
N-Ch
P-Ch
N-Ch
P-Ch
20
A
ID(on)
VGS = 10 V, VDS = 5 V
VGS = -10 V, VDS = -5 V
VDS = 5 V, I D = -7 A
VDS = -5 V, I D = -5 A
-20
Forward Transconductance
15
8
S
S
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
650
730
345
400
90
pF
pF
pF
Ciss
Coss
Crss
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Input Capacitance
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance
90
Si4539DY Rev. A
Electrical Characteristics(continued)
SWITCHING CHARACTERISTICS (Note 2)
Symbol
Parameter
Conditions
Type Min
N-Ch
Typ
8
Max Units
tD(on)
Turn - On Delay Time
VDS = 10 V, I D = 1 A
16
20
ns
P-Ch
11
VGS = 10 V , RGEN = 6 W
Turn - On Rise Time
Turn - Off Delay Time
N-Ch
P-Ch
N-Ch
P-Ch
14
10
23
90
25
18
ns
ns
tr
tD(off)
VDS = -10 V, I D = -1 A
37
125
VGS = -10 V , RGEN = 6 W
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9
18
80
26
27
ns
nC
nC
nC
tf
55
18
19
3.2
3.5
4.3
3.6
Qg
Qgs
Qgd
VDS = 10 V, I D = 7 A,
VGS = 10 V
VDS = -10 V, I D = -5 A,
VGS = -10 V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
N-Ch
P-Ch
1.3
-1.3
1.2
A
A
V
V
IS
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.3 A (Note 2)
VGS = 0 V, IS = -1.3 A (Note 2)
0.75
-0.75
-1.2
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%..
Si4539DY Rev. A
Typical Electrical Characteristics: N-Channel
2.4
2
30
V
= 10V
GS
5.5V
4.5V
24
18
12
6
VGS = 4.0V
4.0V
1.6
1.2
0.8
4.5 V
5.0V
6.0 V
3.5V
7.0V
10V
24
3.0V
3
0
0
6
12
18
30
0
1
2
4
5
I
, DRAIN CURRENT (A)
D
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
1.8
1.6
1.4
1.2
1
I
= 7A
I D= 3A
D
V
= 10V
GS
0.12
0.09
0.06
0.03
0
TA = 125°C
TA = 25°C
0.8
0.6
-50
2
4
6
8
10
-25
0
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
GS
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
30
25
20
15
10
5
V
= 10V
DS
V
= 0V
GS
T
J
= 125°C
1
0.1
25°C
-55°C
0.01
T
= 125°C
J
0.001
25°C
-55°C
0.0001
0
0
0.2
V
0.4
0.6
0.8
1
1.2
1
2
3
4
5
, BODY DIODE FORWARD VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
SD
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4539DY Rev. A
Typical Electrical Characteristics: N-Channel (continued)
2000
10
8
ID = 7A
1200
800
VDS= 5V
10V
15V
C
iss
C
6
oss
400
200
100
50
4
f = 1 MHz
= 0 V
C
rss
2
V
GS
0
0.1
0.2
0.5
1
2
5
10
30
0
2
4
6
8
10
12
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Q
, GATE CHARGE (nC)
g
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
50
30
30
25
20
15
10
5
SINGLE PULSE
=135 °C/W
10
5
R
q
JA
TA = 25°C
2
1
0.5
VGS =10V
SINGLE PULSE
R qJA= 135° C/W
0.1
0.05
T
= 25°C
A
0
0.01
0.1
0.5
10
50 100
300
0.01
0.1
0.2
0.5
1
2
5
10
30 50
SINGLE PULSE TIME (SEC)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 9. Maximum Safe Operating Area.
Si4539DY Rev. A
Typical Electrical Characteristics: P-Channel
2.4
2
30
V
= -10V
-7.0V
-5.5V
- 5.0V
-4.5V
GS
24
18
12
6
V
= - 3.5V
GS
-4.0V
-4.0 V
1.6
1.2
0.8
-4.5 V
-5.0 V
-3.5V
-6.0V
-8.0V
15
-3.0V
4
-10V
0
0
5
10
- I , DRAIN CURRENT (A)
20
0
1
2
3
5
6
D
- V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 11. On-Region Characteristics.
0.2
1.8
I
= 5A
ID = -2.0A
D
V
= 10V
GS
1.6
1.4
1.2
1
0.15
0.1
0.05
0
125°C
25°C
0.8
0.6
0
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
T
, JUNCTION TEMPERATURE (°C)
-V , GATE TO SOURCE VOLTAGE (V)
GS
J
Figure 13. On-Resistance Variation
with Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
60
10
50
V
= -5V
V
= 0V
T
= -55°C
GS
DS
J
25°C
125°C
40
30
20
10
0
1
T
= 125°C
J
25°C
0.1
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
2
4
6
8
10
-V , BODY DIODE FORWARD VOLTAGE (V)
-V , GATE TO SOURCE VOLTAGE (V)
GS
SD
Figure 16. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 15. Transfer Characteristics.
Si4539DY Rev. A
Typical Electrical Characteristics: P-Channel (continued)
2000
10
8
I D = -5A
VDS= -5V
-10V
-15V
1000
500
C
iss
C
oss
6
200
100
50
4
C
rss
f = 1 MHz
= 0 V
2
V
GS
0
0.1
0.3
1
3
10
30
0
2
4
6
8
10
12
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
Q
, GATE CHARGE (nC)
g
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
100
10
30
25
20
15
10
5
SINGLE PULSE
R
q
=135 °C/W
JA
TA = 25°C
1
VGS = -10V
SINGLE PULSE
0.1
RqJA = 135°C/W
A
T
= 25°C
0
0.01
0.1
0.5
10
50 100
300
0.01
0.1
0.2
0.5
-V
1
2
5
10
20
50
SINGLE PULSE TIME (SEC)
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power
Dissipation.
Si4539DY Rev. A
Typical Thermal Characteristics: N & P-Channel (continued)
1
D = 0.5
0.2
0.5
R
(t) = r(t) * R
JA
q
JA
q
0.2
0.1
R
=
°C/W
135
JA
q
0.1
0.05
0.05
P(pk)
0.02
0.01
0.02
0.01
t
1
t
2
Single Pulse
T
- T = P * R
(t)
JA
0.005
J
A
q
Duty Cycle, D = t /t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t , TIME (sec)
1
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermalresponse will change depending on the circuit board design.
Si4539DY Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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